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104 条记录 (耗时 0.028 秒)

    NANOTUBE ENABLED, GATE-VOLTAGE CONTROLLED LIGHT EMITTING DIODES
    32.
    发明申请
    NANOTUBE ENABLED, GATE-VOLTAGE CONTROLLED LIGHT EMITTING DIODES 有权
    NANOTUBE ENABLED，GATE-VOLTAGE CONTROLLED LED发光二极管

    公开(公告)号：US20120256175A1

    公开(公告)日：2012-10-11

    申请号：US13528953

    申请日：2012-06-21

    申请人： Andrew Gabriel Rinzler ,  Bo Liu ,  Mitchell Austin McCarthy ,  John Robert Reynolds ,  Franky So

    发明人： Andrew Gabriel Rinzler ,  Bo Liu ,  Mitchell Austin McCarthy ,  John Robert Reynolds ,  Franky So

    IPC分类号： H01L51/30 ,  H01L51/54

    CPC分类号： H01L51/5296 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/0048 ,  H01L51/0558 ,  H01L51/057 ,  H01L51/102 ,  H01L51/5203 ,  Y10S977/701 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/767 ,  Y10S977/932 ,  Y10S977/936 ,  Y10S977/937 ,  Y10S977/938

    摘要： Embodiments of the invention relate to vertical field effect transistor that is a light emitting transistor. The light emitting transistor incorporates a gate electrode for providing a gate field, a first electrode comprising a dilute nanotube network for injecting a charge, a second electrode for injecting a complementary charge, and an electroluminescent semiconductor layer disposed intermediate the nanotube network and the electron injecting layer. The charge injection is modulated by the gate field. The holes and electrons, combine to form photons, thereby causing the electroluminescent semiconductor layer to emit visible light. In other embodiments of the invention a vertical field effect transistor that employs an electrode comprising a conductive material with a low density of states such that the transistors contact barrier modulation comprises barrier height lowering of the Schottky contact between the electrode with a low density of states and the adjacent semiconductor by a Fermi level shift.

    摘要翻译： 本发明的实施例涉及作为发光晶体管的垂直场效应晶体管。 发光晶体管包括用于提供栅极场的栅电极，包括用于注入电荷的稀释纳米管网络的第一电极，用于注入互补电荷的第二电极和设置在纳米管网络之间的电致发光半导体层和电子注入 层。 电荷注入由栅极场调制。 空穴和电子结合形成光子，从而使电致发光半导体层发射可见光。 在本发明的其它实施例中，采用包括具有低密度状态的导电材料的电极的垂直场效应晶体管，使得晶体管接触势垒调制包括具有低密度状态的电极之间的肖特基接触的势垒高度降低，以及 相邻的半导体通过费米能级移位。

    SOLARTURF: SOLAR ENERGY HARVESTING ARTIFICIAL TURF
    33.
    发明申请
    SOLARTURF: SOLAR ENERGY HARVESTING ARTIFICIAL TURF 有权
    SOLARTURF：太阳能收集人造革

    公开(公告)号：US20110023934A1

    公开(公告)日：2011-02-03

    申请号：US12745285

    申请日：2008-11-26

    申请人： Jiangeng Xue ,  Franky So ,  Kirk S. Schanze ,  John R. Reynolds

    发明人： Jiangeng Xue ,  Franky So ,  Kirk S. Schanze ,  John R. Reynolds

    IPC分类号： H01L31/042 ,  H01L31/18

    CPC分类号： H01L27/301 ,  H01L27/304

    摘要： A SolarTurf unit has a plurality of solar blades, each blade comprising a donor-acceptor conjugated polymer (DA-CP) disposed between and electrically contacting a working electrode and a counter electrode where at least one of electrodes is transparent and where the plurality of solar blades have like or different DA-CPs having like color or different colors, for example, green. The SolarTurf unit includes an interconnect strip having a first electrically conductive surface and a second electrically conductive surface separated by an insulator. The working electrodes are electrically connected to the first electrically conductive surface and the counter electrodes are electrically connected to the second electrically conductive surface. The SolarTurf units can be combined into a device for harvesting light energy to provide an electric output. The SolarTurf device can have the appearance of a lawn or other plant, fungi, rock, sand or animal.

    摘要翻译： SolarTurf单元具有多个太阳能叶片，每个叶片包括设置在工作电极和对电极之间的电接触共轭聚合物（DA-CP），其中至少一个电极是透明的，并且多个太阳能 叶片具有类似或不同的具有相似颜色或不同颜色的DA-CP，例如绿色。 SolarTurf单元包括具有第一导电表面和由绝缘体隔开的第二导电表面的互连条。 工作电极电连接到第一导电表面，并且相对电极电连接到第二导电表面。 SolarTurf单元可以组合成用于收集光能的设备以提供电力输出。 SolarTurf设备可以具有草坪或其他植物，真菌，岩石，沙子或动物的外观。

    NANOTUBE ENABLED, GATE-VOLTAGE CONTROLLED LIGHT EMITTING DIODES
    34.
    发明申请
    NANOTUBE ENABLED, GATE-VOLTAGE CONTROLLED LIGHT EMITTING DIODES 有权
    NANOTUBE ENABLED，GATE-VOLTAGE CONTROLLED LED发光二极管

    公开(公告)号：US20100237336A1

    公开(公告)日：2010-09-23

    申请号：US12677457

    申请日：2008-09-10

    申请人： Andrew Gabriel Rinzler ,  Bo Liu ,  Mitchell Austin McCarthy ,  John Robert Reynolds ,  Franky So

    发明人： Andrew Gabriel Rinzler ,  Bo Liu ,  Mitchell Austin McCarthy ,  John Robert Reynolds ,  Franky So

    IPC分类号： H01L51/30 ,  H01L51/54

    CPC分类号： H01L51/5296 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/0048 ,  H01L51/0558 ,  H01L51/057 ,  H01L51/102 ,  H01L51/5203 ,  Y10S977/701 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/767 ,  Y10S977/932 ,  Y10S977/936 ,  Y10S977/937 ,  Y10S977/938

    摘要： Embodiments of the invention relate to vertical field effect transistor that is a light emitting transistor. The light emitting transistor incorporates a gate electrode for providing a gate field, a first electrode comprising a dilute nanotube network for injecting a charge, a second electrode for injecting a complementary charge, and an electroluminescent semiconductor layer disposed intermediate the nanotube network and the electron injecting layer. The charge injection is modulated by the gate field. The holes and electrons, combine to form photons, thereby causing the electroluminescent semiconductor layer to emit visible light. In other embodiments of the invention a vertical field effect transistor that employs an electrode comprising a conductive material with a low density of states such that the transistors contact barrier modulation comprises barrier height lowering of the Schottky contact between the electrode with a low density of states and the adjacent semiconductor by a Fermi level shift.

    摘要翻译： 本发明的实施例涉及作为发光晶体管的垂直场效应晶体管。 发光晶体管包括用于提供栅极场的栅电极，包括用于注入电荷的稀释纳米管网络的第一电极，用于注入互补电荷的第二电极和设置在纳米管网络之间的电致发光半导体层和电子注入 层。 电荷注入由栅极场调制。 空穴和电子结合形成光子，从而使电致发光半导体层发射可见光。 在本发明的其它实施例中，采用包括具有低密度状态的导电材料的电极的垂直场效应晶体管，使得晶体管接触势垒调制包括具有低密度状态的电极之间的肖特基接触的势垒高度降低;以及 相邻的半导体通过费米能级移位。

    Drive scheme for improved device lifetime
    37.
    发明申请
    Drive scheme for improved device lifetime 审中-公开
    驱动方案，提高器件寿命

    公开(公告)号：US20070024537A1

    公开(公告)日：2007-02-01

    申请号：US11195260

    申请日：2005-08-01

    申请人： Vi-En Choong ,  Franky So

    发明人： Vi-En Choong ,  Franky So

    IPC分类号： G09G3/30

    CPC分类号： G09G3/3216 ,  G09G2310/0254 ,  G09G2310/0256 ,  G09G2320/043

    摘要： Driving passive matrix optoelectronic devices is described. Driving a passive matrix OLED display includes addressing a row of a plurality of rows during a row time of a frame. During the frame, a reverse bias is applied to all the pixels.

    摘要翻译： 描述了驱动无源矩阵光电器件。 驱动无源矩阵OLED显示器包括在帧的行时间期间寻址多行行。 在帧期间，对所有像素施加反向偏置。

    Determining leakage in matrix-structured electronic devices
    38.
    发明授权
    Determining leakage in matrix-structured electronic devices 有权
    确定矩阵结构的电子设备中的泄漏

    公开(公告)号：US07157928B2

    公开(公告)日：2007-01-02

    申请号：US10952601

    申请日：2004-09-28

    申请人： Franky So ,  Florian Pschenitzka ,  Egbert Hoefling

    发明人： Franky So ,  Florian Pschenitzka ,  Egbert Hoefling

    IPC分类号： G01R31/00

    CPC分类号： G09G3/3216 ,  G01R31/3008 ,  G09G3/006

    摘要： One embodiment of this invention pertains to a high throughput screening technique to identify current leakage in matrix-structured electronic devices. Because elements that are likely to develop a short have relatively high leakage current at zero operation hours, by identifying elements with the relatively high leakage current, the electronic devices that are more likely to later develop a short can be differentiated. The screening technique includes performing the following actions: selecting one of multiple first lines; applying a first voltage to the selected first line; applying a second voltage to the one or more of the first lines that are not selected; floating the multiple second lines; and measuring the voltages on the second lines, either sequentially one line at a time or measuring all the lines at the same time.

    摘要翻译： 本发明的一个实施例涉及用于识别矩阵结构的电子设备中的电流泄漏的高通量筛选技术。 因为可能发展为短路的元件在零工作时间具有相对高的漏电流，所以通过识别具有相对高的漏电流的元件，可以区分更有可能稍后发展短路的电子器件。 筛选技术包括执行以下动作：选择多个第一行之一; 对所选择的第一线施加第一电压; 对未选择的一条或多条第一条线施加第二电压; 浮动多条第二行; 并且一次测量第二条线上的电压，或者一次依次测量一条线或同时测量所有线。

    Reduction or elimination of color change with viewing angle for microcavity devices
    40.
    发明申请
    Reduction or elimination of color change with viewing angle for microcavity devices 审中-公开
    用于微腔设备的视角减少或消除颜色变化

    公开(公告)号：US20060066220A1

    公开(公告)日：2006-03-30

    申请号：US10951514

    申请日：2004-09-27

    申请人： Vi-En Choong ,  Franky So

    发明人： Vi-En Choong ,  Franky So

    IPC分类号： H05B33/02 ,  H05B33/00

    CPC分类号： H01L51/5265

    摘要： In an embodiment of the invention, a microcavity OLED device that minimizes or eliminates color change at different viewing angles is fabricated. This OLED device includes a multi-layer mirror on a substrate, and each of the layers are comprised of a non-absorbing material. The OLED device also includes a first electrode on the multi-layered first mirror, and the first electrode is substantially transparent. An emissive layer is on the first electrode. A second electrode is on the emissive layer, and the second electrode is substantially reflective and functions as a mirror. The multi-layer mirror and the second electrode form a microcavity that amplifies a particular wavelength that is in resonance with an optical length of the microcavity. The emissive layer is comprised of a material that has an emission spectrum with no luminance components with significant intensity at wavelengths shorter than a wavelength at which a color change begins to occur.

    摘要翻译： 在本发明的一个实施例中，制造了在不同视角下最小化或消除颜色变化的微腔OLED器件。 该OLED器件包括在衬底上的多层反射镜，并且每个层由非吸收材料构成。 OLED器件还包括在多层第一反射镜上的第一电极，并且第一电极基本上是透明的。 发射层位于第一电极上。 第二电极位于发射层上，第二电极基本上是反射性的并且用作反射镜。 多层反射镜和第二电极形成放大与微腔的光学长度共振的特定波长的微腔。 发射层由具有发射光谱的材料组成，其发射光谱的波长比开始发生颜色变化的波长短，其亮度分量没有明显的强度。