摘要:
A cop changing mechanism for a winding unit, for transferring a tray supporting a cop in an upright position from a waiting position to a winding position and removing a tray supporting an empty bobbin away from the winding position is provided with a tray holder for pressing down the tray located at the winding position.
摘要:
An object of the present invention is to allow a flap of a roll storage case to be easily opened and closed by means of a flap cover and to prevent the flap cover from slipping off from the flap of the roll storage case even when the flap is opened and closed many times. A flap cover includes an upper plate covering an upper surface portion of a flap, a front plate covering a front surface portion of the flap, and a pair of side plates covering opposite side surface portions of the flap. Each of the side plates includes a locking portion which projects inward from the side plate and which is able to be locked on a lower end surface of the side surface portion of the flap.
摘要:
According to one embodiment, a nonvolatile semiconductor memory device includes a substrate, a stacked structural body, a semiconductor pillar, and a memory unit. The stacked structural body is provided on a major surface of the substrate. The stacked structural body includes electrode films alternately stacked with inter-electrode insulating films in a direction perpendicular to the major surface. The pillar pierces the body in the direction. The memory unit is provided at an intersection between the pillar and the electrode films. The electrode films include at least one of amorphous silicon and polysilicon. The stacked structural body includes first and second regions. A distance from the second region to the substrate is greater than a distance from the first region to the substrate. A concentration of an additive included in the electrode film in the first region is different from that included in the electrode film in the second region.
摘要:
In a manufacturing process of a semiconductor device by forming a structure film on a substrate in a reaction chamber of a manufacturing apparatus, cleaning inside the reaction chamber is performed. That is, a precoat film made of a silicon nitride film containing boron is deposited on an inner wall of the reaction chamber, a silicon nitride film not containing boron is formed as the structure film on the substrate in the reaction chamber, and the inner wall of the reaction chamber is dry etched to be cleaned. At this time, the dry etching is terminated after boron is detected in a gas exhausted from the reaction chamber.
摘要:
A lower buffer 6 is placed under a traveling rail for an overhead traveling vehicle 16, and a side buffer 8 is provided on a side of the traveling rail. The overhead traveling vehicle 16 has a hoisting frame 30, and a lateral feeding unit 24 for laterally feeding the hoisting frame 30.
摘要:
A method of manufacturing a semiconductor storage device includes providing an opening portion in a plurality of positions in an insulating film formed on a silicon substrate, and thereafter forming an amorphous silicon film on the insulating film, in which the opening portions are formed, and in the opening portions. Then, trenches are formed to divide the amorphous silicon film, in the vicinity of a midpoint between adjacent opening portions, into a portion on one opening portion side and a portion on the other opening portion side. Next, the amorphous silicon film, in which the trenches are formed, is annealed and subjected to solid-phase crystallization to form a single crystal with the opening portions used as seeds, and thereby a silicon single-crystal layer is formed. Then, a memory cell array is formed on the silicon single-crystal layer.
摘要:
A semiconductor device manufacturing method has forming element isolation trenches in a semiconductor substrate, forming a silicon compound film in insides of the element isolation trenches in order to embed the element isolation trenches, conducting a first oxidation processing at a first temperature to reform a surface of the silicon compound film to a volatile matter emission preventing layer which permits passage of an oxidizing agent and impurities and which does not permit passage of a volatile matter containing silicon atoms, and conducting a second oxidation processing at a second temperature which is higher than the first temperature to form a coated silicon oxide film inside the element isolation trenches.
摘要:
A gasket in an integrated double-layered structure comprising an outer layer and an inner layer enclosed by the outer layer, in which the outer layer is a low-hardness rubber layer having a JIS A hardness of 40-70, and the inner layer is a high-hardness rubber layer having a JIS A hardness of 80-100, where a ratio h/h0 of height h of the inner layer to height h0 of the outer layer is preferably 0.3-0.8, and ratio d/d0 of height d of the inner layer to width d0 of the outer layer is preferably 0.5-0.8 in the longitudal cross-section as view from the width direction of the gasket, has a low reaction force, and distinguished sealability and insertibility, and used as inserted between two members, one of which has a groove for insertion.
摘要翻译:一种整体式双层结构的垫圈,其包括由外层包围的外层和内层,外层是JIS A硬度为40-70的低硬度橡胶层,内层为 JIS A硬度为80〜100的高硬度橡胶层,外层的高度h与高度h0的比例h / h0优选为0.3〜0.8,高度d的比d / d0 的内层宽度d0在从垫片的宽度方向观察的纵向截面中优选为0.5〜0.8,具有低的反作用力,并且具有显着的密封性和可插入性,并且用于插入两个 其中一个具有用于插入的凹槽。
摘要:
In a curve section, a comb tooth mark 28 is provided concentrically with a center line 44 of a running rail 4. A comb tooth sensor 34 on an overhead running vehicle 2 reads comb teeth 40. Then, corrections are made using the ratio of the radius of curvature (R) of the center line 44 and the radius of curvature (r) of the comb tooth mark 28. An encoder interpolates the areas between the teeth 40. Then, the position of the overhead running vehicle 2 in the curve section is determined. The present invention thus enables the exact position of the overhead running vehicle 2 to be recognized even when the overhead running vehicle 2 is located in a curve section. This makes it possible to provide a load port in a curve section.
摘要:
A gasket in an integrated double-layered structure comprising an outer layer and an inner layer enclosed by the outer layer, in which the outer layer is a low-hardness rubber layer having a JIS A hardness of 40-70, and the inner layer is a high-hardness rubber layer having a JIS A hardness of 80-100, where a ratio h/h0 of height h of the inner layer to height h0 of the outer layer is preferably 0.3-0.8, and ratio d/d0 of height d of the inner layer to width d0 of the outer layer is preferably 0.5-0.8 in the longitudal cross-section as view from the width direction of the gasket, has a low reaction force, and distinguished sealability and insertibility, and used as inserted between two members, one of which has a groove for insertion.