公开(公告)号：US09343372B1

公开(公告)日：2016-05-17

申请号：US14583835

申请日：2014-12-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ruqiang Bao ,  Unoh Kwon ,  Rekha Rajaram ,  Keith Kwong Hon Wong

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/40 ,  H01L29/51 ,  H01L21/3213 ,  H01L29/66 ,  H01L29/49

CPC classification number: H01L29/4966 ,  H01L21/32134 ,  H01L21/823842 ,  H01L29/401 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66606

Abstract: A method includes forming an n-FET device and a p-FET device on a substrate, each of the n-FET device and the p-FET device include a metal gate stack consisting of a titanium-aluminum carbide (TiAlC) layer above and in direct contact with a titanium nitride (TiN) cap, and removing, from the p-FET device, the TiAlC layer selective to the TiN cap. The removal of the TiAlC layer includes using a selective TiAlC to TiN wet etch chemistry solution with a substantially high TiAlC to TiN etch ratio such that the TiN cap remains in the p-FET device.

Abstract translation: 一种方法包括在衬底上形成n-FET器件和p-FET器件，n-FET器件和p-FET器件中的每一个包括由上述钛 - 碳化铝（TiAlC）层和 与氮化钛（TiN）帽直接接触，并且从p-FET器件去除对TiN帽有选择性的TiAlC层。 去除TiAlC层包括使用具有基本上高的TiAlC至TiN蚀刻比的选择性TiAlC至TiN湿蚀刻化学溶液，使得TiN帽保留在p-FET器件中。