公开(公告)号：US20120064676A1

公开(公告)日：2012-03-15

申请号：US13301032

申请日：2011-11-21

申请人： Hye-Hyang PARK ,  Byoung-Deog Choi ,  Dae-Woo Lee ,  Chang-Young Jeong ,  Moo-Jin Kim ,  Kyoung-Bo Kim

发明人： Hye-Hyang PARK ,  Byoung-Deog Choi ,  Dae-Woo Lee ,  Chang-Young Jeong ,  Moo-Jin Kim ,  Kyoung-Bo Kim

IPC分类号： H01L21/336

CPC分类号： H01L29/4908 ,  H01L27/1214 ,  H01L29/66757

摘要： A thin film transistor includes a substrate, a semiconductor layer on the substrate, a thermal oxide layer on the semiconductor layer, a gate electrode on the thermal oxide layer, the gate electrode positioned to correspond to a channel region of the semiconductor layer, an interlayer insulating layer on the substrate, and source and drain electrodes electrically connected to the semiconductor layer.

摘要翻译： 薄膜晶体管包括衬底，衬底上的半导体层，半导体层上的热氧化物层，热氧化层上的栅电极，位于半导体层的沟道区上的栅电极，中间层 绝缘层，以及与半导体层电连接的源极和漏极。

公开(公告)号：US20110151601A1

公开(公告)日：2011-06-23

申请号：US12970580

申请日：2010-12-16

申请人： Kwang-Hae Kim ,  Moo-Jin Kim

发明人： Kwang-Hae Kim ,  Moo-Jin Kim

IPC分类号： H01L33/00 ,  H01L21/84 ,  H01L21/225

CPC分类号： H01L21/0237 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02675 ,  H01L27/1277 ,  H01L29/66757

摘要： A crystallization method, a method of manufacturing a thin-film transistor, and a method of manufacturing a display device are provided. The crystallization method comprises: forming a backup amorphous silicon layer on a substrate, forming nickel particles on the backup amorphous silicon layer, converting the backup amorphous silicon layer into an amorphous silicon layer by thermally processing the backup amorphous silicon layer so as to diffuse the nickel particles throughout said backup amorphous silicon layer; and irradiating the amorphous silicon layer with energy from a laser.

摘要翻译： 提供了一种结晶方法，一种制造薄膜晶体管的方法和一种制造显示装置的方法。 结晶方法包括：在衬底上形成备用非晶硅层，在备用非晶硅层上形成镍颗粒，通过热处理后备非晶硅层将备用非晶硅层转化为非晶硅层，以使镍 整个所述备用非晶硅层的颗粒; 并用激光照射非晶硅层。

公开(公告)号：US07800110B2

公开(公告)日：2010-09-21

申请号：US12219747

申请日：2008-07-28

申请人： Moo-Jin Kim ,  Cheol-Su Kim ,  Ki-Yong Lee ,  Kyoung-Bo Kim

发明人： Moo-Jin Kim ,  Cheol-Su Kim ,  Ki-Yong Lee ,  Kyoung-Bo Kim

IPC分类号： H01L31/036

CPC分类号： H01L29/4908 ,  H01L29/66757

摘要： A thin film transistor (TFT), including a substrate, an active layer and a gate electrode on the substrate, and a first gate insulating layer and a second gate insulating layer between the active layer and the gate electrode. Each of the first gate insulating layer and the second gate insulating layer may have a thickness between approximately 200 Å and approximately 400 Å, inclusive.

摘要翻译： 在衬底上包括衬底，有源层和栅电极的薄膜晶体管（TFT）以及有源层和栅电极之间的第一栅极绝缘层和第二栅极绝缘层。 第一栅极绝缘层和第二栅极绝缘层中的每一个可以具有在大约等于或等于400的厚度。

公开(公告)号：US20100148163A1

公开(公告)日：2010-06-17

申请号：US12636303

申请日：2009-12-11

申请人： Ki-Ju Im ,  Yong-Sung Park ,  Yong-Woo Park ,  Moo-Jin Kim ,  Han-Hee Yoon ,  Kwang-Hae Kim ,  Sung-Won Doh ,  Kyoung-Bo Kim ,  Gun-Shik Kim ,  Jun-Sik Oh

发明人： Ki-Ju Im ,  Yong-Sung Park ,  Yong-Woo Park ,  Moo-Jin Kim ,  Han-Hee Yoon ,  Kwang-Hae Kim ,  Sung-Won Doh ,  Kyoung-Bo Kim ,  Gun-Shik Kim ,  Jun-Sik Oh

IPC分类号： H01L51/50

CPC分类号： H01L27/3269 ,  G06F3/0412 ,  G06F3/042

摘要： An organic light emitting display apparatus includes an organic light emitting diode, a photo sensor, and a light blocking portion. The light blocking portion is at at least a side of the photo sensor so that light emitted from the organic light emitting diode is not directly incident on the photo sensor.

摘要翻译： 有机发光显示装置包括有机发光二极管，光传感器和遮光部。 遮光部位于光传感器的至少一侧，使得从有机发光二极管发射的光不直接入射到光传感器上。

公开(公告)号：US20090184632A1

公开(公告)日：2009-07-23

申请号：US12320110

申请日：2009-01-16

申请人： Moo-Jin Kim ,  Kyoung-Bo Kim ,  Ki-Yong Lee ,  Han-Hee Yoon

发明人： Moo-Jin Kim ,  Kyoung-Bo Kim ,  Ki-Yong Lee ,  Han-Hee Yoon

IPC分类号： H01J1/62 ,  H01L29/786 ,  H01L21/336

CPC分类号： H01L29/4908 ,  H01L29/66757

摘要： A thin film transistor which has improved characteristics, a method of fabricating the same, and an organic light emitting diode (OLED) display device having the same. The thin film transistor includes a substrate, a semiconductor layer disposed on the substrate and including a channel region, and source and drain regions, the channel region being doped with impurities, a thermal oxide layer disposed on the semiconductor layer, a silicon nitride layer disposed on the thermal oxide layer, a gate electrode disposed on the silicon nitride layer and corresponding to a predetermined region of the semiconductor layer, an interlayer insulating layer disposed on the entire surface of the substrate, and source and drain electrodes electrically connected with the semiconductor layer.

摘要翻译： 具有改进的特性的薄膜晶体管，其制造方法和具有该薄膜晶体管的有机发光二极管（OLED）显示装置。 薄膜晶体管包括：衬底，设置在衬底上并包括沟道区的半导体层，以及源极和漏极区，掺杂有杂质的沟道区，设置在半导体层上的热氧化物层，设置有氮化硅层 在所述热氧化物层上，设置在所述氮化硅层上并对应于所述半导体层的预定区域的栅极电极，设置在所述基板的整个表面上的层间绝缘层以及与所述半导体层电连接的源极和漏极 。

公开(公告)号：US20080224143A1

公开(公告)日：2008-09-18

申请号：US12048662

申请日：2008-03-14

申请人： Kyoung-Bo Kim ,  Kil-Won Lee ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Moo-Jin Kim

发明人： Kyoung-Bo Kim ,  Kil-Won Lee ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Moo-Jin Kim

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L29/78675 ,  H01L27/1229 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/3262 ,  H01L29/66757

摘要： A thin film transistor and a method of fabricating the same include: a semiconductor layer having a grain boundary disposed in a crystal growth direction and having a variation in height of a top surface of 15 nm or less formed by a thin beam directional crystallization method. Also, an organic light emitting diode (OLED) display device comprising the thin film transistor is provided and has excellent characteristics fabricated by a simple process. Also, a flat panel display device and a method of fabricating the same are provided and include: a polycrystalline silicon layer in a pixel region; and a polycrystalline silicon layer in a peripheral region formed by the thin beam directional crystallization method. Also, a semiconductor device and a method of fabricating the same include: an intrinsic region of a semiconductor layer in the photodiode region formed by the thin beam directional crystallization method.

摘要翻译： 薄膜晶体管及其制造方法包括：具有通过薄射束定向结晶法形成的具有15nm以下的顶面的高度变化的晶体生长方向的晶界的半导体层。 此外，提供了包括薄膜晶体管的有机发光二极管（OLED）显示装置，并且具有通过简单的工艺制造的优异特性。 此外，提供了一种平板显示装置及其制造方法，包括：像素区域中的多晶硅层; 以及通过薄束定向结晶法形成的周边区域中的多晶硅层。 此外，半导体器件及其制造方法包括：通过薄射束定向结晶法形成的光电二极管区域中的半导体层的本征区域。