-
公开(公告)号:US20200343695A1
公开(公告)日:2020-10-29
申请号:US16397083
申请日:2019-04-29
Applicant: Hewlett Packard Enterprise Development LP
IPC: H01S5/40 , H01S5/022 , H01S5/42 , H01S5/042 , H01L31/02 , H01L25/04 , H01L23/13 , H01L23/538 , H01L23/00 , H04B10/25 , H04J14/02
Abstract: Examples herein relate to optical modules. In particular, implementations herein relate to optical modules that include top-emitting VCSELs and/or top-entry photodetectors. The optical modules include a substrate having opposing first and second sides. The optical modules further includes a first interposer having opposing first and second sides and a plurality of top-emitting vertical-cavity surface-emitting lasers (VCSELs). The VCSELs are flip-chipped to the second side of the first interposer such that they are disposed between the substrate and the first interposer. The VCSELs are configured to emit optical signals having different wavelengths. The optical signals are configured to be combined and transmitted over a single optical fiber. The optical modules include a plurality of electrical conductors forming electrical paths between electrical contacts of the top-emitting VCSELs and the substrate.
-
公开(公告)号:US20200341200A1
公开(公告)日:2020-10-29
申请号:US16397689
申请日:2019-04-29
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Thomas Van Vaerenbergh , Peng Sun , Sagi Varghese Mathai
Abstract: Examples herein relate to multi-layer grating couplers. In particular, implementations herein relate to multi-layer grating couplers that include a first grating layer, an angle correction layer disposed over the first grating layer, and an oxide layer disposed between the first grating layer and the angle correction layer. The multi-layer grating coupler further includes a waveguide layer disposed at a same elevation as or below the first grating layer. The first grating layer is configured to convert a propagation direction of light from an in-plane direction through the waveguide layer to a near-vertical or non-in-plane direction into the angle correction layer. The angle correction layer is configured to tilt an output coupling angle of the light from the first grating layer such that the light exits the multi-layer grating coupler into an optical fiber at a same angle as the optical fiber.
-
公开(公告)号:US20190326731A1
公开(公告)日:2019-10-24
申请号:US15958029
申请日:2018-04-20
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Sagi Varghese Mathai , Michael Renee Ty Tan
Abstract: An optical apparatus is provided for an optical transceiver. The optical apparatus includes an interposer, a glass lens chip bonded to the interposer, and a plurality of bottom-emitting vertical-cavity surface-emitting lasers (VCSELs) flip chipped to the interposer. Each of the bottom-emitting VCSELs is fabricated on a respective substrate, at least one bottom-emitting VCSEL is capable of emitting an optical signal having a wavelength of about 850 nm, and at least a portion of the respective substrate on which the at least one bottom-emitting VCSEL is fabricated is removed to permit the at least one bottom-emitting VCSEL to emit the optical signal having the wavelength of about 850 nm to the glass lens chip.
-
公开(公告)号:US10388807B2
公开(公告)日:2019-08-20
申请号:US15120510
申请日:2014-04-30
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Sagi Varghese Mathai , Michael Renne Ty Tan
IPC: H01L31/0224 , H01L31/0232 , H01L31/18
Abstract: An example device in accordance with an aspect of the present disclosure includes a photodetector disposed on a substrate, and a mirror disposed on the photodetector. The mirror is to reflect light back into the photodetector. The mirror includes a reflective layer and a second layer. The second layer is disposed between the reflective layer and the photodetector.
-
公开(公告)号:US10007065B2
公开(公告)日:2018-06-26
申请号:US15030427
申请日:2013-10-31
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Michael Renne Ty Tan , Sagi Varghese Mathai , Georgios Panotopoulos , Paul Kessler Rosenberg , Wayne Victor Sorin
CPC classification number: G02B6/29365 , G02B6/29367 , G02B6/2938 , G02B6/4215 , H04B10/2504 , H04J14/02
Abstract: An example device includes a first semiconductor component comprising at least two lasers to emit light at a first wavelength; a second semiconductor component comprising at least two lasers to emit light at a second wavelength, the first wavelength being different from the second wavelength; and an optical multiplexer to receive light from two lasers at the first wavelength and light from two lasers at the second wavelength. The optical multiplexer component includes a first output interface to couple light from one laser at the first wavelength and light from one laser at the second wavelength to a first optical fiber, and a second output interface to couple light from one laser at the first wavelength and light from one laser at the second wavelength beams to a second optical fiber.
-
公开(公告)号:US20160238795A1
公开(公告)日:2016-08-18
申请号:US15027085
申请日:2013-10-09
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
CPC classification number: G02B6/3596 , G02B6/29329 , G02B6/29344 , G02B6/3546 , G02B2006/12159 , G02F1/3136 , G02F1/3138 , G02F2001/217 , H01S5/50 , H04Q11/0005 , H04Q2011/0009 , H04Q2011/0049 , H04Q2011/0058
Abstract: Loss compensated optical switching includes an optical crossbar switch and a wafer bonded semiconductor amplifier (SOA). The optical crossbar switch has a plurality of input ports and a plurality of output ports and is on a substrate of a first semiconductor material. The wafer bonded SOA includes a layer of second semiconductor material that is wafer bonded to a surface of the substrate such that a portion of the wafer bonded SOA semiconductor material layer overlies a portion of a port of the plurality of input ports. The second semiconductor material of the wafer bonded SOA is different from the first semiconductor material of the substrate.
Abstract translation: 损耗补偿光开关包括光交叉开关和晶圆接合半导体放大器(SOA)。 光学交叉开关具有多个输入端口和多个输出端口,并且在第一半导体材料的基板上。 晶片接合的SOA包括第二半导体材料层,其被晶片结合到衬底的表面,使得晶片接合的SOA半导体材料层的一部分覆盖多个输入端口的端口的一部分。 晶片接合的SOA的第二半导体材料与衬底的第一半导体材料不同。
-
-
-
-
-