摘要:
A liquid crystal composition contains a mesomorphic compound represented by the following formula (A): ##STR1## wherein R.sub.1 denotes a linear or branched alkyl group having 1-18 carbon atoms; X.sub.1 denotes a single bond, --O--, --CO--O-- or --O--CO--; X.sub.2 denotes a single bond, --OCH.sub.2 --, --CO--O-- or --O--CO--; n is an integer of 3-16; and A.sub.1, denotes ##STR2## and a mesomorphic compound represented by the following formula (B): ##STR3## wherein R.sub.2 denotes a linear or branched alkyl group having 1-18 carbon atoms; X.sub.3 and X.sub.4 independently denote a single bond, --O--, --CO--O-- or --O--CO--; m is an integer of 3-16; and A.sub.2 denotes ##STR4## The liquid crystal composition may preferably be formulated as a chiral smectic liquid crystal composition. The liquid crystal composition is useful in providing a liquid crystal device using the liquid crystal composition with a good alignment characteristic, a good drive characteristic, and a high contrast ratio.
摘要:
A liquid crystal composition contains a mesomorphic compound represented by the following formula (A): ##STR1## wherein R.sub.1 and R.sub.2 independently denote a linear or branched alkyl group having 1-18 carbon atoms; X.sub.1 and X.sub.2 independently denote a single bond, --O--, --CO--O-- or --O--CO--; and A.sub.1 denotes a single bond, ##STR2## or ##STR3## and A.sub.2 denotes ##STR4## or ##STR5## and a mesomorphic compound represented by the following formula (B): ##STR6## wherein R.sub.3 denotes a linear or branched alkyl group having 1-18 carbon atoms; X.sub.3 and X.sub.4 independently denote a single bond, --O--, --CO--O-- or --O--CO--; m is an integer of 3-16; and A.sub.3 denotes ##STR7## or ##STR8## The liquid crystal composition may preferably be formulated as a chiral smectic liquid crystal composition. The liquid crystal composition is useful in providing a liquid crystal device using the liquid crystal composition with a good alignment characteristic, a good drive characteristic, and a high and stable contrast ratio.
摘要:
The present invention is to provide a method for forming various patterns such as a metal or metal compound pattern, in which the amounts of the materials constituting the pattern which are removed during the formation step can be suppressed to the minimum. The method comprises a resin pattern forming step of forming on the surface of a substrate a resin pattern capable of absorbing a solution containing metal components, an absorbing step of dipping the resin pattern in the solution containing metal components to make the resin pattern absorb the solution containing metal components, a washing step of washing the substrate having formed thereon the resin pattern that has absorbed the solution containing metal components, and a burning step of burning the resin pattern after washing.
摘要:
A method for forming a film pattern includes applying a water-soluble photosensitive resin on a substrate, exposing the photosensitive resin to light, developing the photosensitive resin with a developer, after developing the photosensitive resin, depositing a material for the film pattern on the substrate, and, after depositing the material for the film pattern, removing photosensitive resin remaining on the substrate with a remover. The remover and the developer include the same solute, and a concentration of the solute in the remover is higher than that in the developer.
摘要:
The present invention is to provide a method for forming various patterns such as a metal or metal compound pattern, in which the amounts of the materials constituting the pattern which are removed during the formation step can be suppressed to the minimum. The method comprises a resin pattern forming step of forming on the surface of a substrate a resin pattern capable of absorbing a solution containing metal components, an absorbing step of dipping the resin pattern in the solution containing metal components to make the resin pattern absorb the solution containing metal components, a washing step of washing the substrate having formed thereon the resin pattern that has absorbed the solution containing metal components, and a burning step of burning the resin pattern after washing.
摘要:
A fine electrode and wiring pattern with a good adhesive property is easily formed using a water-based solution easy to handle and small in environmental load, thereby improving a stability of a manufacturing process of an image-forming apparatus in the case where the water-based solution is used in the manufacturing process. A base pattern is formed using a base pattern forming material for electrode and wiring material absorption which is a water-based solution containing a water-soluble photosensitive resin component and a water-soluble metallic compound including rhodium, bismuth, ruthenium, vanadium, chromium, tin, lead, or silicon. An organic metallic compound is absorbed in the base pattern and then baking is conducted to form electrodes and wirings.
摘要:
A liquid crystal device with a decreased temperature-dependence of response speed is obtained by using a liquid crystal composition having a temperature range where the composition assumes chiral smectic C phase. The temperature range of chiral smectic C phase includes a) a first temperature range where the liquid crystal composition shows a cone angle in chiral smectic C phase which increases on temperature decrease down to a mediate temperature, and b) a second temperature range, below the first temperature range, where the liquid crystal composition shows a cone angle in chiral smectic C phase which decreases on further temperature decrease below the mediate temperature.
摘要:
A liquid crystal apparatus includes a chiral smectic liquid crystal showing a first and a second orientation state disposed between first and second electrodes of a liquid cell. A drive circuit applies voltages between the first and second electrodes including voltages .vertline.V.sub.S .vertline. and .vertline.V.sub.I .vertline. which provide voltages V.sub.A and V.sub.B (V.sub.B V.sub.A) satisfying the relationship of: .vertline.(V.sub.A -V.sub.B)/(V.sub.A +V.sub.B).vertline.>0.1 at 40.degree. C. V.sub.A is a minimum peak value of a voltage .vertline.V.sub.S .vertline.+.vertline.V.sub.I .vertline. (at a constant pulse width) capable of inverting the first orientation state of the chiral smectic liquid crystal into the second orientation state when a voltage pulse is applied between the first and second electrodes to cause the first orientation state of the chiral smectic liquid crystal and then the voltage .vertline.V.sub.S .vertline.+.vertline.V.sub.I .vertline. is applied between the first and second electrodes as a combination of a voltage .vertline.V.sub.S .vertline. applied to the first electrode and a voltage - V.sub.I .vertline. applied to the second electrode V.sub.B is a value of .vertline.V.sub.S .vertline.+.vertline.V.sub.I .vertline. calculated based on a maximum peak value of a voltage .vertline.V.sub.S .vertline.-.vertline.V.sub.I .vertline. capable of maintaining the first orientation state of the chiral smectic liquid crystal when a voltage pulse is applied between the first and second electrodes to cause the first orientation state and then the voltage .vertline.V.sub.S .vertline.-.vertline.V.sub.I .vertline. is applied between the first and second electrodes as a combination of a voltage .vertline.V.sub.S .vertline. applied to the first electrode and a voltage .vertline.V.sub.I .vertline. applied to the second electrode.
摘要:
A method for producing a pattern of an electroconductive member, comprises: a step of forming on a substrate surface a resin film containing acid group; a step of incorporating into the resin film a liquid containing a metal complex salt and having a pH value of 5 to 7; and a step of baking the resin film to form the electroconductive member from a metal component incorporated into the resin film, thereby improving uniformity and speed of an adsorbing of the metal component into the resin, and providing uniform characteristics of the electroconductive pattern.
摘要:
A method for producing a film pattern comprises a step of forming a resin film on a substrate surface; a step of incorporating into the resin film a constituent of a conductive film or a semiconductor film; a step of irradiating the resin film with an ultraviolet light; and a step of heating the resin film at a temperature not lower than a decomposition temperature of the resin to form a conductive film or a semiconductor film on the substrate, whereby the resin does not easily generate decomposition residues to improve precision and quality of the produced film pattern.