公开(公告)号：US5621247A

公开(公告)日：1997-04-15

申请号：US602285

申请日：1996-02-16

申请人： Shuji Hirao ,  Hideko Okada ,  Kousaku Yano

发明人： Shuji Hirao ,  Hideko Okada ,  Kousaku Yano

IPC分类号： H01L27/10 ,  G11C17/10 ,  H01L21/822 ,  H01L21/8246 ,  H01L27/105 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： G11C13/00 ,  G11C13/0069 ,  G11C17/10 ,  H01L21/822 ,  H01L27/101 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/14 ,  H01L45/1616 ,  H01L45/1683 ,  G11C2013/0073 ,  G11C2213/33 ,  G11C2213/56 ,  G11C2213/77

摘要： On an insulating substrate are formed first aluminum interconnections. In openings formed in a silicon dioxide film are formed unit cells each consisting of a tungsten electrode and an aluminum alloy electrode containing silicon. Over the silicon dioxide film are formed a large number of linear second aluminum interconnections which are orthogonal to the first aluminum interconnections. At the individual intersections of the first and second aluminum interconnections are disposed the unit cells so as to compose a memory cell array. When a large current is allowed to flow through the unit cell, silicon in the aluminum alloy electrode moves in a direction opposite to the current flow and is precipitated in the aluminum electrode in the vicinity of the interface with the tungsten electrode, resulting in an increase in resistance value. When a large current is allowed to flow through the unit cell in the opposite direction, silicon is diffused, resulting in a reduction in resistance value. Data can be read by measuring the magnitude of the resistance value with an extremely small current and judging whether it is in a high state or in a low state.

摘要翻译： 在绝缘基板上形成第一铝互连。 在二氧化硅膜形成的开口中形成有由钨电极和含有硅的铝合金电极组成的单电池。 在二氧化硅膜上形成大量与第一铝互连正交的线性第二铝互连。 在第一和第二铝互连的各个交叉处设置单元电池以构成存储单元阵列。 当允许大电流流过单元电池时，铝合金电极中的硅沿着与电流相反的方向移动，并且在与钨电极的界面附近的铝电极中沉淀，导致增加 电阻值。 当允许大电流以相反方向流过单位电池时，硅扩散，导致电阻值的降低。 可以通过以极小的电流测量电阻值的大小并判断其是处于高状态还是处于低状态来读取数据。

公开(公告)号：US5569628A

公开(公告)日：1996-10-29

申请号：US535323

申请日：1995-09-27

申请人： Kousaku Yano ,  Tomoyasu Murakami ,  Masayuki Endo ,  Noboru Nomura

发明人： Kousaku Yano ,  Tomoyasu Murakami ,  Masayuki Endo ,  Noboru Nomura

IPC分类号： H01L21/28 ,  H01L21/768 ,  H01L21/465

CPC分类号： H01L21/76841 ,  H01L21/76843

摘要： A silicon dioxide film is partly etched away to form an opening thereby exposing a silicon substrate. The surface of the opening, which is almost entirely covered with Si-OH, is coated with hexamethyldisilazane (HMDS) to bring about a silylation reaction. This causes the silicon substrate surface to be covered with a molecular film formed by replacing the hydrogen part in Si-OH with Si((CH.sub.3).sub.3. Atoms of aluminum are ejected by a sputtering process. The ejected aluminum atoms collide with the molecular film. Although some hydrocarbons (CH.sub.x) are sputtered or ejected due to such collision, a SiO.sub.x C.sub.y H.sub.z film 12' transformed from the molecular film is left between an aluminum film deposited and the silicon substrate. This SiO.sub.x C.sub.y H.sub.z film 12' acts as a barrier metal. The presence of the SiO.sub.x C.sub.y H.sub.z film prevents the occurrence of counter diffusion in the Al-Si system. No spikes are formed as a result.

摘要翻译： 部分地蚀刻掉二氧化硅膜以形成开口，从而暴露硅衬底。 几乎完全用Si-OH覆盖的开口的表面涂覆有六甲基二硅氮烷（HMDS）以进行甲硅烷基化反应。 这导致硅衬底表面被用Si（（CH 3）3代替Si-OH中的氢部分而形成的分子膜覆盖，铝的原子通过溅射工艺喷射，喷射的铝原子与分子膜碰撞 虽然由于这种碰撞而使一些烃类（CHx）溅射或喷射，但是从分子膜转化的SiO x C y H z膜12'留在沉积的铝膜和硅基板之间，该SiOxCyHz膜12'作为阻挡金属， SiOxCyHz膜的存在防止了在Al-Si系统中产生反向扩散，结果不形成尖峰。