公开(公告)号：US20060220122A1

公开(公告)日：2006-10-05

申请号：US11373488

申请日：2006-03-13

Applicant: Yasuyuki Sayama ,  Tetsuya Okada ,  Makoto Oikawa ,  Hiroyasu Ishida ,  Kazunari Kushiyama

Inventor： Yasuyuki Sayama ,  Tetsuya Okada ,  Makoto Oikawa ,  Hiroyasu Ishida ,  Kazunari Kushiyama

IPC: H01L29/76

CPC classification number: H01L29/7802 ,  H01L29/0878 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/66712

Abstract: An n type impurity region is provided below a gate electrode. By setting a gate length to be less than a depth of a channel region, a side surface of the channel region and a side surface of the n type impurity region adjacent to the channel region form a substantially perpendicular junction surface. Thus, since a depletion layer widens uniformly in a depth direction of a substrate, it is possible to secure a predetermined breakdown voltage. Furthermore, since an interval between the channel regions, above which the gate electrode is disposed, is uniform from its surface to its bottom, it is possible to increase an impurity concentration of the n type impurity region, resulting in an achievement of a low on-resistance.

Abstract translation: 在栅电极的下方设置有n型杂质区。 通过将栅极长度设置为小于沟道区的深度，沟道区的侧表面和与沟道区相邻的n型杂质区的侧表面形成基本上垂直的接合表面。 因此，由于耗尽层在衬底的深度方向上均匀地变宽，因此可以确保预定的击穿电压。 此外，由于栅极电极上方的沟道区域之间的间隔从表面到底部均匀，所以可以增加n型杂质区域的杂质浓度，导致实现低的导通 -抵抗性。

公开(公告)号：US20050255706A1

公开(公告)日：2005-11-17

申请号：US11123248

申请日：2005-05-06

Applicant: Hiroyasu Ishida ,  Hirotoshi Kubo ,  Shouji Miyahara ,  Masato Onda

Inventor： Hiroyasu Ishida ,  Hirotoshi Kubo ,  Shouji Miyahara ,  Masato Onda

IPC: H01L21/28 ,  H01L21/30 ,  H01L21/31 ,  H01L21/322 ,  H01L21/336 ,  H01L21/469 ,  H01L21/768 ,  H01L21/8234 ,  H01L27/10 ,  H01L29/417 ,  H01L29/45 ,  H01L29/74 ,  H01L29/78

CPC classification number: H01L29/7813 ,  H01L21/3003 ,  H01L21/76886 ,  H01L21/823487 ,  H01L29/456

Abstract: In a MOSFET, after an element region is formed, a wiring layer is formed subsequently to a barrier metal layer, and hydrogen annealing is performed. However, in the case of an n-channel MOSFET, a threshold voltage is lowered due to an occlusion characteristic of the barrier metal layer. Thus, an increased impurity concentration in a channel layer causes a problem that reduction in an on-resistance is inhibited. According to the present invention, after a barrier metal layer is formed, an opening is provided in the barrier metal layer on an interlayer insulating film, and hydrogen annealing treatment is performed after a wiring layer is formed. Thus, an amount of hydrogen which reaches a substrate is further increased, and lowering of a threshold voltage is suppressed. Moreover, since an impurity concentration in a channel layer can be lowered, an on-resistance is reduced.

Abstract translation: 在MOSFET中，在形成元件区之后，在阻挡金属层的后面形成布线层，进行氢退火。 然而，在n沟道MOSFET的情况下，由于阻挡金属层的遮挡特性，阈值电压降低。 因此，通道层中杂质浓度的增加引起导通电阻的降低被抑制的问题。 根据本发明，在形成阻挡金属层之后，在层间绝缘膜上的阻挡金属层中设置开口，在形成布线层之后进行氢退火处理。 因此，到达基板的氢的量进一步增加，并且抑制了阈值电压的降低。 此外，由于可以降低沟道层中的杂质浓度，所以导通电阻降低。

公开(公告)号：US5001198A

公开(公告)日：1991-03-19

申请号：US306987

申请日：1989-02-06

Applicant: Akira Sekiya ,  Masanori Tamura ,  Hiroyasu Ishida

Inventor： Akira Sekiya ,  Masanori Tamura ,  Hiroyasu Ishida

IPC: C08F8/18 ,  C08F8/20

CPC classification number: C08F8/18

Abstract: A novel fluorine-containing polymeric compound represented by the general formula--CH.sub.2 --CH[(CH.sub.2).sub.a --NH.sub.2 ]}.sub.m-n--CH.sub.2 --CH[(CH.sub.2).sub.a --NH--CO--NH--CH.sub.2).sub.a Rf]}.sub.n,in which Rf is a perfluoroalkyl group having 6 to 15 carbon atoms, m is a positive integer in the range from 10 to 1500, n is a positive integer smaller than 0.7 m and a is 0 or 1, is prepared by the reaction of, when a is 0, a polyvinylamine of the formula --CH.sub.2 --CHNH.sub.2 ].sub.m, with an alkyl perfluoroalkanoate of the formula Rf--CO--OR, in which R is an alkyl group having 1 to 5 carbon atoms, or, when a is 1, a polyallylamine of the formula --CH.sub.2 --CH(CH.sub.2 --NH.sub.2)].sub.m, with a perfluoroalkylmethyl isocyanate of the formula RfCH.sub.2 --NCO. Despite the high fluorine content, the polymer is soluble in at least one kind of organic solvents so that Langmuir-Blodgett's films can be prepared from a solution of the polymer. The LB films have an extremely low surface energy and useful as a material for protection and modification of various surfaces.