公开(公告)号：US20070262390A1

公开(公告)日：2007-11-15

申请号：US11797900

申请日：2007-05-08

Applicant: Hiroyasu Ishida ,  Yasunari Noguchi

Inventor： Hiroyasu Ishida ,  Yasunari Noguchi

IPC: H01L29/94

CPC classification number: H01L29/7811 ,  H01L27/088 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/42372 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7813

Abstract: Channel regions and gate electrodes are also disposed continuously with transistor cells below a gate pad electrode. The transistor cells are formed in a stripe pattern and allowed to contact a source electrode. In this way, the channel regions and the gate electrodes, which are positioned below the gate pad electrode, are kept at a predetermined potential. Thus, a predetermined drain-source reverse breakdown voltage can be secured without providing a p+ type impurity region on the entire surface below the gate pad electrode.

Abstract translation: 通道区域和栅电极也与栅极焊盘电极下面的晶体管单元连续地设置。 晶体管单元形成为条状图案并允许与源极接触。 以这种方式，位于栅极焊盘电极下方的沟道区域和栅极电极保持在预定电位。 因此，可以确保在栅极焊盘电极下方的整个表面上不提供p + +型杂质区域的预定漏极 - 源极反向击穿电压。

公开(公告)号：US20050255706A1

公开(公告)日：2005-11-17

申请号：US11123248

申请日：2005-05-06

Applicant: Hiroyasu Ishida ,  Hirotoshi Kubo ,  Shouji Miyahara ,  Masato Onda

Inventor： Hiroyasu Ishida ,  Hirotoshi Kubo ,  Shouji Miyahara ,  Masato Onda

IPC: H01L21/28 ,  H01L21/30 ,  H01L21/31 ,  H01L21/322 ,  H01L21/336 ,  H01L21/469 ,  H01L21/768 ,  H01L21/8234 ,  H01L27/10 ,  H01L29/417 ,  H01L29/45 ,  H01L29/74 ,  H01L29/78

CPC classification number: H01L29/7813 ,  H01L21/3003 ,  H01L21/76886 ,  H01L21/823487 ,  H01L29/456

Abstract: In a MOSFET, after an element region is formed, a wiring layer is formed subsequently to a barrier metal layer, and hydrogen annealing is performed. However, in the case of an n-channel MOSFET, a threshold voltage is lowered due to an occlusion characteristic of the barrier metal layer. Thus, an increased impurity concentration in a channel layer causes a problem that reduction in an on-resistance is inhibited. According to the present invention, after a barrier metal layer is formed, an opening is provided in the barrier metal layer on an interlayer insulating film, and hydrogen annealing treatment is performed after a wiring layer is formed. Thus, an amount of hydrogen which reaches a substrate is further increased, and lowering of a threshold voltage is suppressed. Moreover, since an impurity concentration in a channel layer can be lowered, an on-resistance is reduced.

Abstract translation: 在MOSFET中，在形成元件区之后，在阻挡金属层的后面形成布线层，进行氢退火。 然而，在n沟道MOSFET的情况下，由于阻挡金属层的遮挡特性，阈值电压降低。 因此，通道层中杂质浓度的增加引起导通电阻的降低被抑制的问题。 根据本发明，在形成阻挡金属层之后，在层间绝缘膜上的阻挡金属层中设置开口，在形成布线层之后进行氢退火处理。 因此，到达基板的氢的量进一步增加，并且抑制了阈值电压的降低。 此外，由于可以降低沟道层中的杂质浓度，所以导通电阻降低。

公开(公告)号：US5001198A

公开(公告)日：1991-03-19

申请号：US306987

申请日：1989-02-06

Applicant: Akira Sekiya ,  Masanori Tamura ,  Hiroyasu Ishida

Inventor： Akira Sekiya ,  Masanori Tamura ,  Hiroyasu Ishida

IPC: C08F8/18 ,  C08F8/20

CPC classification number: C08F8/18

Abstract: A novel fluorine-containing polymeric compound represented by the general formula--CH.sub.2 --CH[(CH.sub.2).sub.a --NH.sub.2 ]}.sub.m-n--CH.sub.2 --CH[(CH.sub.2).sub.a --NH--CO--NH--CH.sub.2).sub.a Rf]}.sub.n,in which Rf is a perfluoroalkyl group having 6 to 15 carbon atoms, m is a positive integer in the range from 10 to 1500, n is a positive integer smaller than 0.7 m and a is 0 or 1, is prepared by the reaction of, when a is 0, a polyvinylamine of the formula --CH.sub.2 --CHNH.sub.2 ].sub.m, with an alkyl perfluoroalkanoate of the formula Rf--CO--OR, in which R is an alkyl group having 1 to 5 carbon atoms, or, when a is 1, a polyallylamine of the formula --CH.sub.2 --CH(CH.sub.2 --NH.sub.2)].sub.m, with a perfluoroalkylmethyl isocyanate of the formula RfCH.sub.2 --NCO. Despite the high fluorine content, the polymer is soluble in at least one kind of organic solvents so that Langmuir-Blodgett's films can be prepared from a solution of the polymer. The LB films have an extremely low surface energy and useful as a material for protection and modification of various surfaces.