公开(公告)号：US20080258609A1

公开(公告)日：2008-10-23

申请号：US11873504

申请日：2007-10-17

申请人： Naoto Nakamura

发明人： Naoto Nakamura

IPC分类号： H01J1/63 ,  H01J9/24

CPC分类号： H01L51/5271 ,  H01L27/3246 ,  H01L51/5265

摘要： The present invention provides an organic light-emitting device including a substrate and a plurality of organic light-emitting elements formed on the substrate, wherein the plurality of the organic light-emitting elements include a first organic light-emitting element which emits a light of a first emission color, and a second organic light-emitting element which emits a light of a second emission color different from the first emission color; each of the organic light-emitting elements has a first electrode having a light reflection layer and a transparent conductive layer, an organic compound layer containing a light-emitting layer, and a second electrode as a light extraction electrode, in mentioned order on the substrate; the light reflection layer of the first organic light-emitting element is formed between the substrate and the transparent conductive layer; the light reflection layer of the second organic light-emitting element is formed between the transparent conductive layer and the organic compound layer; and a thickness of the transparent conductive layer of the first organic light-emitting element is the same a thickness of the transparent conductive layer of the second organic light-emitting element.

摘要翻译： 本发明提供了一种有机发光装置，其包括基板和形成在基板上的多个有机发光元件，其中所述多个有机发光元件包括：第一有机发光元件，其发射 第一发光颜色和第二有机发光元件，其发射与第一发射颜色不同的第二发射颜色的光; 各有机发光元件具有在基板上依次具有光反射层和透明导电层的第一电极，含有发光层的有机化合物层和作为光提取电极的第二电极 ; 第一有机发光元件的光反射层形成在基板和透明导电层之间; 第二有机发光元件的光反射层形成在透明导电层和有机化合物层之间; 并且第一有机发光元件的透明导电层的厚度与第二有机发光元件的透明导电层的厚度相同。

公开(公告)号：US6114804A

公开(公告)日：2000-09-05

申请号：US44906

申请日：1998-03-20

申请人： Toshimitsu Kawase ,  Naoto Nakamura

发明人： Toshimitsu Kawase ,  Naoto Nakamura

IPC分类号： H01J29/92 ,  H01J63/04

CPC分类号： H01J29/92 ,  H01J2201/3165 ,  H01J2329/00

摘要： An image-forming apparatus comprises in a vacuum envelope an electron source including a plurality of electron-emitting devices and an image-forming member including a fluorescent layer and a high voltage anode layer disposed vis-a-vis the electron source. The envelope may preferably have a low resistance electroconductive member electrically connected to the ground by way of a low impedance ground connection line for by-passing large electric current which may occur upon electric discharge between the anode layer and the electron source and can possibly destroy the electron-emitting devices if flowing thereinto by way of the driving wires of the devices. The high voltage anode layer and/or the low resistance electroconductive member is drawn out from the inside of the envelope to a recess formed in the outer surface of the envelope and is electrically connected to external wiring in the recess.

摘要翻译： 图像形成装置在真空外壳中包括包括多个电子发射器件的电子源和包括相对于电子源设置的荧光层和高电压阳极层的图像形成部件。 外壳可以优选地具有通过低阻抗接地线电连接到地面的低电阻导电构件，用于绕过阳极层和电子源之间放电时可能发生的大电流，并且可能破坏 电子发射器件如果通过器件的驱动线流入其中。 高压阳极层和/或低电阻导电构件从外壳的内部被拉出到形成在外壳的外表面中的凹部，并且与凹部中的外部布线电连接。

公开(公告)号：US08471943B2

公开(公告)日：2013-06-25

申请号：US12999998

申请日：2009-06-15

申请人： Naoyuki Ito ,  Nobutaka Mizuno ,  Naoto Nakamura ,  Masami Iseki

发明人： Naoyuki Ito ,  Nobutaka Mizuno ,  Naoto Nakamura ,  Masami Iseki

IPC分类号： H04N5/222

CPC分类号： H01L27/3209 ,  H01L27/3244

摘要： Provided is a stacked organic light-emitting device in which organic compound layers for respective emission colors are capable of separately emitting light. The stacked organic light-emitting device includes a first organic compound layer, a second organic compound layer, and a third organic compound layer, which have emission colors different from each other. The first organic compound layer is provided on one side of a common transparent electrode, and the second organic compound layer and the third organic compound layer are provided on another side thereof. The first organic compound layer has a polarity direction opposite to polarity directions of the second organic compound layer and the third organic compound layer.

摘要翻译： 提供了一种层叠有机发光装置，其中各发光颜色的有机化合物层能够分别发光。 层叠的有机发光器件包括具有彼此不同的发光颜色的第一有机化合物层，第二有机化合物层和第三有机化合物层。 第一有机化合物层设置在公共透明电极的一侧，第二有机化合物层和第三有机化合物层设置在另一侧。 第一有机化合物层的极性方向与第二有机化合物层和第三有机化合物层的极性方向相反。

公开(公告)号：US08188500B2

公开(公告)日：2012-05-29

申请号：US12638766

申请日：2009-12-15

申请人： Toshinori Hasegawa ,  Naoto Nakamura ,  Masato Yajima ,  Ryota Watanabe

发明人： Toshinori Hasegawa ,  Naoto Nakamura ,  Masato Yajima ,  Ryota Watanabe

IPC分类号： H01L33/10 ,  H01L33/26 ,  H01L33/42

CPC分类号： H01L51/5265 ,  H01L27/3211 ,  H01L51/0059

摘要： An organic light-emitting element includes a first electrode, a second electrode, and at least one organic compound layer disposed between the first electrode and the second electrode. The organic compound layer includes a light-emitting layer containing a light-emitting material and being configured to emit light toward the first electrode and the second electrode. The light emitted toward the first electrode is reflected from a reflection plane located at the first electrode to cause interference with the light emitted toward the second electrode. The interference provides an interference intensity distribution having a maximum peak at a wavelength λ1. The light-emitting material of the light-emitting layer exhibits a photoluminescence spectrum having a maximum peak at a wavelength λ2. The organic light-emitting element produces an electroluminescence spectrum having a maximum peak at a wavelength λ3. These wavelengths satisfy the relationships: λ2≠λ3 and |λ2−λ3|

摘要翻译： 有机发光元件包括第一电极，第二电极和设置在第一电极和第二电极之间的至少一个有机化合物层。 有机化合物层包括含有发光材料并被配置为朝向第一电极和第二电极发光的发光层。 朝向第一电极发射的光从位于第一电极的反射平面反射，以引起对朝向第二电极发射的光的干扰。 干扰提供在波长λ1具有最大峰值的干涉强度分布。 发光层的发光材料具有在波长λ2具有最大峰值的光致发光光谱。 有机发光元件产生在波长λ3具有最大峰值的电致发光光谱。 这些波长满足关系：λ2≠λ3和|λ2-λ3| <|λ2-λ1|。

公开(公告)号：US07923920B2

公开(公告)日：2011-04-12

申请号：US11873504

申请日：2007-10-17

申请人： Naoto Nakamura

发明人： Naoto Nakamura

IPC分类号： H05B33/00 ,  H01L51/50 ,  H01J1/63

CPC分类号： H01L51/5271 ,  H01L27/3246 ,  H01L51/5265

摘要： An organic light-emitting device has a substrate and a plurality of organic light-emitting elements formed on the substrate. The plurality of the organic light-emitting elements include a first light-emitting element emitting light of a first emission color, and a second light-emitting element emitting light of a different emission color. Each light-emitting element has, in sequence, a first electrode having a light reflection layer and a transparent conductive layer, an organic compound layer containing a light-emitting layer, and a second electrode on the substrate. The light reflection layer of the first element is between the substrate and the transparent conductive layer and the light reflection layer of the second element is between the transparent conductive layer and the organic compound layer. A thickness of the transparent conductive layer of the first and second organic light-emitting elements is the same.

摘要翻译： 有机发光器件具有形成在基板上的基板和多个有机发光元件。 多个有机发光元件包括发射第一发光颜色的第一发光元件和发射不同发光颜色的光的第二发光元件。 每个发光元件依次具有在基板上具有光反射层和透明导电层的第一电极，含有发光层的有机化合物层和第二电极。 第一元件的光反射层在基板和透明导电层之间，第二元件的光反射层位于透明导电层和有机化合物层之间。 第一和第二有机发光元件的透明导电层的厚度相同。

公开(公告)号：US07865070B2

公开(公告)日：2011-01-04

申请号：US11578963

申请日：2005-03-22

申请人： Iwao Nakamura ,  Naoto Nakamura ,  Sadao Nakashima

发明人： Iwao Nakamura ,  Naoto Nakamura ,  Sadao Nakashima

IPC分类号： A21B2/00

CPC分类号： H01L21/67306 ,  H01L21/324 ,  H01L21/67109 ,  H01L21/67309

摘要： To prevent both slips caused by damage from projections, and slips caused by adhesive force occurring due to excessive smoothing.The heat treating apparatus includes a processing chamber for heat treating wafers and a boat for supporting the wafers in the processing chamber. The boat further includes a wafer holder in contact with the wafer and a main body for supporting the wafer holder. The wafer holder diameter is 63 to 73 percent of the wafer diameter, and the surface roughness Ra of the portion of the wafer holder in contact with the wafer is set from 1 μm to 1,000 μm. The wafer can be supported so that the amount of wafer displacement is minimal and both slips due to damage from projections on the wafer holder surface, and slips due to the adhesive force occurring because of excessive smoothing can be prevented in that state.

摘要翻译： 防止由于突起造成的两个滑动，以及由于过度平滑而产生的粘合力引起的滑移。 热处理装置包括用于对晶片进行热处理的处理室和用于将晶片支撑在处理室中的舟皿。 船还包括与晶片接触的晶片保持器和用于支撑晶片保持器的主体。 晶片保持器直径为晶片直径的63〜73％，与晶片接触的晶片保持器的部分的表面粗糙度Ra为1μm〜1000μm。 可以支撑晶片，从而在这种状态下可以防止晶片位移量最小，并且由于由于过度平滑而产生的粘附力而由于晶片保持器表面上的突起的损坏而导致的滑移和滑动。

公开(公告)号：US20100148415A1

公开(公告)日：2010-06-17

申请号：US12654837

申请日：2010-01-06

申请人： Naoto Nakamura ,  Iwao Nakamura ,  Tomoharu Shimada ,  Kenichi Ishiguro ,  Sadao Nakashima

发明人： Naoto Nakamura ,  Iwao Nakamura ,  Tomoharu Shimada ,  Kenichi Ishiguro ,  Sadao Nakashima

IPC分类号： B23Q3/00

CPC分类号： H01L21/67306 ,  H01L21/67098 ,  H01L21/67309

摘要： A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided.A substrate support is formed from a main body portion and a supporting portion. In the main body portion, a plurality of placing portions extend parallel, and supporting portions are provided on the placing portions. A substrate is placed on the supporting portion. The supporting portion has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion.

摘要翻译： 热处理装置，半导体装置的制造方法以及基板的制造方法，其中，热处理时的基板中的滑动位错的发生减少，制造高品质的半导体装置， 提供。 基体支撑体由主体部分和支撑部分形成。 在主体部分中，多个放置部分平行延伸，并且在放置部分上设置支撑部分。 将基板放置在支撑部上。 支撑部分具有比基板的平面的面积小的面积，并且由厚度大于基板厚度的硅板形成，从而减少热处理期间的变形。 支撑部分由硅制成，并且在支撑部分的基片放置面上形成涂有碳化硅（SiC）的层。

公开(公告)号：US20080295868A1

公开(公告)日：2008-12-04

申请号：US12155388

申请日：2008-06-03

申请人： Naoto Nakamura ,  Takeshi Taniguchi

发明人： Naoto Nakamura ,  Takeshi Taniguchi

IPC分类号： B08B3/04 ,  B08B13/00

CPC分类号： H01L21/67051 ,  H01L21/02052 ,  H01L21/67034

摘要： A method of manufacturing a semiconductor device which has a cleaning process for cleaning a surface of a substrate while rotating the substrate. The cleaning process includes the steps of cleaning the substrate surface by supplying a cleaning liquid to the substrate; rinsing the cleaned substrate surface by supplying a rinse liquid containing pure water to the substrate; and drying the rinsed substrate. In the rinsing step, HF is added to the rinse liquid.

摘要翻译： 一种制造半导体器件的方法，其具有在旋转衬底的同时清洁衬底的表面的清洁工艺。 清洗处理包括通过向基板供给清洗液来清洗基板表面的步骤; 通过将含有纯水的冲洗液体供应到基底来漂洗清洁的基底表面; 并干燥漂洗的基底。 在冲洗步骤中，向冲洗液中加入HF。

公开(公告)号：US20080267598A1

公开(公告)日：2008-10-30

申请号：US11578963

申请日：2005-03-22

申请人： Iwao Nakamura ,  Naoto Nakamura ,  Sadao Nakashima

发明人： Iwao Nakamura ,  Naoto Nakamura ,  Sadao Nakashima

IPC分类号： A21B2/00

CPC分类号： H01L21/67306 ,  H01L21/324 ,  H01L21/67109 ,  H01L21/67309

摘要： [Problems] To prevent both slips caused by damage from projections, and slips caused by adhesive force occurring due to excessive smoothing.[Means for Solving the Problems] The heat treating apparatus includes a processing chamber for heat treating wafers and a boat for supporting the wafers in the processing chamber. The boat further includes a wafer holder in contact with the wafer and a main body for supporting the wafer holder. The wafer holder diameter is 63 to 73 percent of the wafer diameter, and the surface roughness Ra of the portion of the wafer holder in contact with the wafer is set from 1 μm to 1,000 μm. The wafer can be supported so that the amount of wafer displacement is minimal and both slips due to damage from projections on the wafer holder surface, and slips due to the adhesive force occurring because of excessive smoothing can be prevented in that state.

摘要翻译： [问题]防止由于凸起造成的两个滑移，以及由于过度平滑而产生的粘合力引起的滑移。 解决问题的手段热处理装置包括用于对晶片进行热处理的处理室和用于将晶片支撑在处理室中的舟皿。 船还包括与晶片接触的晶片保持器和用于支撑晶片保持器的主体。 晶片保持器直径为晶片直径的63〜73％，与晶片接触的晶片保持器的部分的表面粗糙度Ra设定为1μm〜1000μm。 可以支撑晶片，从而在这种状态下可以防止晶片位移量最小，并且由于由于过度平滑而产生的粘附力而由于晶片保持器表面上的突起的损坏而导致的滑移和滑动。

公开(公告)号：US5968593A

公开(公告)日：1999-10-19

申请号：US618769

申请日：1996-03-20

申请人： Ichiro Sakamoto ,  Naoto Nakamura

发明人： Ichiro Sakamoto ,  Naoto Nakamura

IPC分类号： H01L21/22 ,  C30B33/00 ,  H01L21/00 ,  H01L21/31 ,  C23C16/00

CPC分类号： H01L21/67109 ,  C30B33/005

摘要： A semiconductor manufacturing apparatus including a heating device; a reaction tube disposed within the heating device, the reaction tube having a gas inlet portion and an exhaust portion parted from each other by a predetermined distance in the longitudinal direction of the reaction tube; and a plurality of gas feed pipes extending along a side wall of the reaction tube from the exhaust portion side to the gas inlet portion, the plurality of gas feed pipes being parted from each other. The reaction gas is provided through the plurality of gas feed pipes into the reaction tube, thereby providing an improved uniform temperature distribution within the reaction tube and resulting in an improved uniform film thickness of the oxide film formed on the surface of the semiconductor wafer.

摘要翻译： 一种半导体制造装置，包括加热装置; 设置在加热装置内的反应管，反应管具有在反应管的长度方向上彼此分开预定距离的气体入口部分和排气部分; 以及多个气体供给管，其从所述排气部侧向所述气体导入部沿所述反应管的侧壁延伸，所述多个供气管相互分离。 反应气体通过多个气体供给管提供到反应管中，从而在反应管内提供改进的均匀的温度分布，并且导致在半导体晶片的表面上形成的氧化物膜的均匀膜厚度的改善。