公开(公告)号：US20240249963A1

公开(公告)日：2024-07-25

申请号：US18421051

申请日：2024-01-24

申请人： Kokusai Electric Corporation

发明人： Yukinori ABURATANI ,  Naofumi Ohashi

IPC分类号： H01L21/673 ,  H01L21/677

CPC分类号： H01L21/67309 ,  H01L21/67306 ,  H01L21/67745 ,  H01L21/67757 ,  H01L21/67769

摘要： There is provided a technique that includes a process chamber in which a substrate is processed; a plurality of substrate supports configured to support the substrate; a rotatable table including a plurality of supports configured to support the plurality of substrate supports; and a heat conduction insulator configured to suppress heat conduction between the plurality of supports.

公开(公告)号：US11929272B2

公开(公告)日：2024-03-12

申请号：US16944299

申请日：2020-07-31

申请人： KOKUSAI ELECTRIC CORPORATION

发明人： Kenichi Suzaki

IPC分类号： H01L21/67 ,  F27B17/00 ,  F27D5/00 ,  H01L21/324 ,  H01L21/673

CPC分类号： H01L21/67309 ,  F27B17/0025 ,  F27D5/0037 ,  H01L21/324 ,  H01L21/67109 ,  H01L21/67306

摘要： There is provided a technique that includes a substrate support including a support column made of metal and a plurality of supports installed at the support column and configured to support a plurality of substrates in multiple stages; a process chamber configured to accommodate the plurality of substrates supported by the substrate support; and a heater configured to heat the plurality of substrates accommodated in the process chamber, wherein the plurality of supports includes at least a contact portion configured to make contact with the plurality of substrates and made of at least one selected from the group of a metal oxide and a non-metal material.

公开(公告)号：US20160233107A1

公开(公告)日：2016-08-11

申请号：US15022846

申请日：2014-10-27

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Masahiro KATO

IPC分类号： H01L21/324 ,  H01L21/673 ,  H01L21/67

CPC分类号： H01L21/324 ,  H01L21/67109 ,  H01L21/67306

摘要： A method for heat treatment of a plurality of semiconductor wafers horizontally placed on a supporting member coated with SiC in a vertical heat treatment furnace includes performing heat treatments while switching the supporting member and a heat treatment condition such that the supporting member is continuously used in a heat treatment under either one of a first condition and a second condition for a certain period of time and then continuously used in a heat treatment under the other condition for a certain period of time, wherein the heat treatment under the first condition is performed at 1000° C. or higher in an atmosphere containing a rare gas and not containing oxygen, and the heat treatment under the second condition is performed at 1000° C. or higher in an atmosphere containing oxygen and not containing a rare gas. As a result, slip dislocation can be inhibited.

摘要翻译： 在垂直热处理炉中水平放置在涂覆有SiC的支撑构件上的多个半导体晶片的热处理方法包括在切换支撑构件的同时执行热处理和热处理条件，使得支撑构件连续地用于 在第一条件和第二条件中的任何一个下进行一段时间的热处理，然后在另一条件下在一定时间内连续使用热处理，其中第一条件下的热处理在1000 在含有稀有气体且不含氧的气氛中，在第二条件下的热处理在含有氧气且不含有稀有气体的气氛中在1000℃以上进行。 结果，可以抑制滑脱位错。

公开(公告)号：US20150184794A1

公开(公告)日：2015-07-02

申请号：US14356216

申请日：2014-01-22

申请人： Wei Yu

发明人： Wei Yu

IPC分类号： F16M13/00 ,  H05B3/44

CPC分类号： F16M13/00 ,  H01L21/67303 ,  H01L21/67306 ,  H01L21/67309 ,  H05B3/44 ,  Y10T29/49082

摘要： The present invention provides a quartz clip device and a manufacturing method thereof and an OLED high-temperature oven having the quartz clip device. The quartz clip device includes: a base (20), a plurality of quartz posts (30) mounted on the base (20), a quartz bottom board (40) arranged above the base (20), and a plurality of quartz plates (50) arranged above the quartz bottom board (40) and secured to the quartz posts (30). The quartz bottom board (40) includes a plurality of circular holes (42) formed therein to respectively correspond to the quartz posts (30). The circular holes (42) have a diameter that is slightly greater than a diameter of the quartz posts (30). The quartz posts (30) are received through he circular holes (42) and fastening members (60) are provided under the circular holes (42) to have the quartz bottom board (40) supported on the quartz posts (30). Slightly enlarging the diameter of the circular holes of the quartz bottom board ensures slight tipping of the quartz posts does not result in contact with the quartz bottom board so as to prevent cracking of the quartz bottom board from being caused by the contacts and affecting the production.

摘要翻译： 本发明提供一种石英夹装置及其制造方法以及具有石英夹装置的OLED高温烘箱。 石英夹装置包括：基座（20），安装在基座（20）上的多个石英柱（30），布置在基座（20）上方的石英底板（40）和多个石英板 50），其布置在石英底板（40）上方并固定到石英柱（30）。 石英底板（40）包括分别对应于石英柱（30）的多个圆形孔（42）。 圆形孔（42）的直径略大于石英柱（30）的直径。 石英柱（30）通过其圆孔（42）容纳，紧固构件（60）设置在圆形孔（42）下方，以使石英底板（40）支撑在石英柱（30）上。 稍微扩大石英底板的圆孔的直径，确保石英柱的轻微倾倒不会导致与石英底板的接触，以防止石英底板由接触引起的破裂并影响生产 。

公开(公告)号：US08287649B2

公开(公告)日：2012-10-16

申请号：US12936286

申请日：2009-04-09

申请人： Takeshi Kobayashi

发明人： Takeshi Kobayashi

IPC分类号： H01L21/263 ,  F27D5/00 ,  C23C16/458

CPC分类号： H01L21/67109 ,  C23C16/4581 ,  C23C16/4583 ,  H01L21/324 ,  H01L21/67098 ,  H01L21/67306 ,  H01L21/67309

摘要： The present invention is a vertical boat for heat treatment having an auxiliary supporting member removably attached to each of supporting parts of a boat body, the auxiliary supporting member on which a substrate to be treated is to be placed, in which the auxiliary supporting member has a guiding member attached to the supporting part and a substrate supporting plate on which the substrate to be treated is to be placed, a hole is formed on an upper surface of the guiding member, the substrate supporting plate is inserted and fitted into the hole of the guiding member so as to be fixed, a height position of a placing surface for the substrate to be treated is higher than a height position of the upper surface of the guiding member, the substrate supporting plate is composed of silicon carbide and the guiding member is composed of quartz.

摘要翻译： 本发明是一种用于热处理的垂直船，其具有可拆卸地附接到船体的每个支撑部分上的辅助支撑构件，辅助支撑构件将待放置的待处理基板放置在辅助支撑构件中，辅助支撑构件具有 安装在支撑部件上的引导部件和要放置待处理基板的基板支撑板，在引导部件的上表面上形成有孔，将基板支撑板插入并嵌入到 所述引导构件被固定，所述待处理基板的放置面的高度位置高于所述引导构件的上表面的高度位置，所述基板支撑板由碳化硅构成，所述引导构件 由石英组成。

公开(公告)号：US08268448B2

公开(公告)日：2012-09-18

申请号：US12685542

申请日：2010-01-11

申请人： James E. Boyle ,  Raanan Zehavi ,  Amnon Chalzel

发明人： James E. Boyle ,  Raanan Zehavi ,  Amnon Chalzel

IPC分类号： B05D3/02 ,  B32B5/16 ,  B32B9/00 ,  B32B17/06 ,  B32B9/04 ,  B32B13/04 ,  G11B11/105

CPC分类号： H01L21/67306 ,  Y10T428/24174 ,  Y10T428/25 ,  Y10T428/252 ,  Y10T428/26

摘要： A method of joining two silicon members, the adhesive used for the method, and the joined product, especially a silicon tower for supporting multiple silicon wafers. A flowable adhesive is prepared comprising silicon particles of size less than 100 μm and preferably less than 100 nm and a silica bridging agent, such as a spin-on glass. Nano-silicon crystallites of about 20 nm size maybe formed by CVD. Larger particles maybe milled from virgin polysilicon. If necessary, a retardant such as a heavy, preferably water-insoluble alcohol such as terpineol is added to slow setting of the adhesive at room temperature. The mixture is applied to the joining areas. The silicon parts are assembled and annealed at a temperature sufficient to link the silica, preferably at 900° C. to 1100° C. for nano-silicon but higher for milled silicon.

摘要翻译： 连接两个硅构件的方法，用于该方法的粘合剂，以及连接的产品，特别是用于支撑多个硅晶片的硅塔。 制备包含尺寸小于100μm且优选小于100nm的硅颗粒的可流动粘合剂和二氧化硅桥接剂，例如旋涂玻璃。 可以通过CVD形成约20nm尺寸的纳米硅微晶。 更大的颗粒可以从原生多晶硅研磨。 如果需要，加入阻燃剂如重质，优选水不溶性醇如萜品醇，以在室温下缓慢固化粘合剂。 将混合物施加到接合区域。 将硅部件在足以连接二氧化硅的温度下组装和退火，优选在900℃至1100℃下进行纳米硅，但对于研磨的硅而言更高。

公开(公告)号：US08202621B2

公开(公告)日：2012-06-19

申请号：US10000975

申请日：2001-10-24

申请人： Michael A. Pickering ,  Jitendra S. Goela

发明人： Michael A. Pickering ,  Jitendra S. Goela

IPC分类号： B32B9/04

CPC分类号： H01L21/68757 ,  C23C16/01 ,  C23C16/325 ,  C23C16/4581 ,  H01L21/67306 ,  Y10T428/218 ,  Y10T428/219

摘要： An opaque, low resistivity silicon carbide and a method of making the opaque, low resistivity silicon carbide. The opaque, low resistivity silicon carbide is a free-standing bulk material that may be machined to form furniture used for holding semi-conductor wafers during processing of the wafers. The opaque, low resistivity silicon carbide is opaque at wavelengths of light where semi-conductor wafers are processed. Such opaqueness provides for improved semi-conductor wafer manufacturing. Edge rings fashioned from the opaque, low resistivity silicon carbide can be employed in RTP chambers.

摘要翻译： 不透明，低电阻率碳化硅和制造不透明低电阻率碳化硅的方法。 不透明的低电阻率碳化硅是独立的散装材料，其可以被机加工以形成用于在晶片加工期间保持半导体晶片的家具。 不透明的低电阻率碳化硅在处理半导体晶片的光的波长处是不透明的。 这种不透明度提供了改进的半导体晶片制造。 由不透明，低电阻率碳化硅制成的边缘环可用于RTP室。

公开(公告)号：US20100304022A1

公开(公告)日：2010-12-02

申请号：US12846510

申请日：2010-07-29

申请人： Larry W. Shive ,  Brian L. Gilmore

发明人： Larry W. Shive ,  Brian L. Gilmore

IPC分类号： B05D1/38 ,  C23C16/02

CPC分类号： H01L21/67306

摘要： A method is disclosed for sandblasting a wafer support platform to create a surface having a uniform roughness. Contaminants become embedded in the surface during the sandblasting procedure. A layer is applied over the surface to isolate the contaminants from a supported wafer while maintaining the uniform roughness.

摘要翻译： 公开了一种用于喷砂晶片支撑平台以创建具有均匀粗糙度的表面的方法。 在喷砂过程中污染物会嵌入表面。 在表面上施加一层以将污染物与受支撑的晶片隔离，同时保持均匀的粗糙度。

公开(公告)号：US07781035B2

公开(公告)日：2010-08-24

申请号：US10487840

申请日：2002-08-28

申请人： Toshihiko Jimbo ,  Toshihide Murakami ,  Tadahiro Ohmi

发明人： Toshihiko Jimbo ,  Toshihide Murakami ,  Tadahiro Ohmi

IPC分类号： B32B1/02 ,  B32B27/00 ,  B32B1/08

CPC分类号： H01L21/67303 ,  H01L21/67306 ,  H01L21/67313 ,  H01L21/67316 ,  H01L21/6732 ,  H01L21/67323 ,  H01L21/67326 ,  H01L21/6733 ,  H01L21/67353 ,  H01L21/67359 ,  H01L21/67386 ,  Y10T428/13 ,  Y10T428/1303 ,  Y10T428/1352 ,  Y10T428/1359 ,  Y10T428/1386 ,  Y10T428/139

摘要： A container for precision substrate having one or more component formed by molding a thermoplastic resin, characterized in that the component satisfies characteristics [1] and [2] below. [1] When being brought to contact ultra high purity argon gas (impurity concentration: 1 ppb or less) at 25° C. having a flow rate of 1.2 L/min., a water amount in said argon gas after 300 minutes is 30 ppb or less per a surface area 1 cm2 of the component. [2] When being placed in the air at 100° C., an increase amount of organics in the air in 300 minutes is 150 ng or less per weight 1 g of the component. According to the container, demands for low contamination can be satisfied.

摘要翻译： 一种用于通过模塑热塑性树脂形成的具有一种或多种组分的精密基材的容器，其特征在于该组分满足下面的特征[1]和[2]。 [1]在流量为1.2L / min的25℃下接触超高纯氩气（杂质浓度为1ppb以下）时，300分钟后的氩气中的水分为30 ppb以下的表面积为1cm 2的成分。 [2]当在100℃下放置在空气中时，在300分钟内空气中有机物的增加量为每重量1克150克或更少。 根据容器，可以满足低污染的要求。

公开(公告)号：US07667301B2

公开(公告)日：2010-02-23

申请号：US10528069

申请日：2003-09-26

申请人： Naoto Nakamura ,  Iwao Nakamura ,  Tomoharu Shimada ,  Kenichi Ishiguro ,  Sadao Nakashima

发明人： Naoto Nakamura ,  Iwao Nakamura ,  Tomoharu Shimada ,  Kenichi Ishiguro ,  Sadao Nakashima

IPC分类号： H01L23/58

CPC分类号： H01L21/67306 ,  H01L21/67098 ,  H01L21/67309

摘要： A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided.A substrate support 30 is formed from a main body portion 56 and a supporting portion 58. In the main body portion 56, a plurality of placing portions 66 extend parallel, and supporting portions 58 are provided on the placing portions 66. A substrate 68 is placed on the supporting portion 58. The supporting portion 58 has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion 58 is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion 58.

摘要翻译： 热处理装置，半导体装置的制造方法以及基板的制造方法，其中，热处理时的基板中的滑动位错的发生减少，制造高品质的半导体装置， 提供。 基板支撑体30由主体部分56和支撑部分58形成。在主体部分56中，多个放置部分66平行延伸，支撑部分58设置在放置部分66上。基板68是 放置在支撑部58上。支撑部58具有比基板的平坦面的面积小的面积，并且由厚度大于基板的厚度的硅板形成，使得热处理时的变形为 减少 支撑部分58由硅制成，并且在支撑部分58的基片放置面上形成涂有碳化硅（SiC）的层。