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公开(公告)号：US20100191874A1
公开(公告)日：2010-07-29
申请号：US12359537
申请日：2009-01-26
IPC分类号： G06F13/28
CPC分类号： G06F3/061 , G06F3/0659 , G06F3/0685 , G06F13/28 , G06F13/32 , G06F13/385 , G06F13/4282
摘要： The present disclosure includes methods, devices, and systems for controlling a memory device. One method for controlling a memory device embodiment includes storing device class dependent information and a command in one or more of host system memory and host controller memory, setting a pointer to the command in a register in a host controller, directing access to the one or more of host system memory and host controller memory with the memory device via the host controller; and executing the command with the memory device.
摘要翻译： 本公开包括用于控制存储器设备的方法，设备和系统。 用于控制存储器件实施例的一种方法包括将设备类相关信息和命令存储在主机系统存储器和主机控制器存储器中的一个或多个中，在主机控制器中的寄存器中设置指向该命令的指针， 通过主机控制器更多的主机系统内存和主机控制器内存与存储设备; 并用存储器件执行命令。
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公开(公告)号：US08451664B2
公开(公告)日：2013-05-28
申请号：US12778577
申请日：2010-05-12
申请人： William H. Radke , Zhenlei Shen , Peter Feeley
发明人： William H. Radke , Zhenlei Shen , Peter Feeley
IPC分类号： G11C11/34
CPC分类号： G11C16/26 , G11C7/14 , G11C11/26 , G11C11/5628 , G11C11/5642 , G11C16/349 , G11C29/021 , G11C29/028 , G11C29/42 , G11C29/50004
摘要： The present disclosure includes methods, devices, and systems for determining and using soft data in memory devices and systems. One or more embodiments include an array of memory cells and control circuitry coupled to the array. The control circuitry is configured to perform a number of sense operations on the memory cells using a number of sensing voltages to determine soft data associated with a target state of the memory cells, and adjust a sensing voltage used to determine the target state based, at least partially, on the determined soft data.
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公开(公告)号：US20130013822A1
公开(公告)日：2013-01-10
申请号：US13618464
申请日：2012-09-14
IPC分类号： G06F13/28
CPC分类号： G06F3/061 , G06F3/0659 , G06F3/0685 , G06F13/28 , G06F13/32 , G06F13/385 , G06F13/4282
摘要： The present disclosure includes methods, devices, and systems for controlling a memory device. One method for controlling a memory device embodiment includes storing device class dependent information and a command in one or more of host system memory and host controller memory, setting a pointer to the command in a register in a host controller, directing access to the one or more of host system memory and host controller memory with the memory device via the host controller; and executing the command with the memory device.
摘要翻译： 本公开包括用于控制存储器设备的方法，设备和系统。 用于控制存储器件实施例的一种方法包括将设备类相关信息和命令存储在主机系统存储器和主机控制器存储器中的一个或多个中，在主机控制器中的寄存器中设置指向该命令的指针， 通过主机控制器更多的主机系统内存和主机控制器内存与存储设备; 并用存储器件执行命令。
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公开(公告)号：US08209447B2
公开(公告)日：2012-06-26
申请号：US12550770
申请日：2009-08-31
CPC分类号： H04L47/215 , H04L47/10 , H04L47/17
摘要： The present disclosure includes methods, devices, and systems for device to device flow control. In one or more embodiments, a system configured for device to device flow control includes a host and a chain of devices, including one or more memory device, coupled to each other and configured to communicate with the host device through a same host port. In one or more embodiments, at least one device in the chain is configured to regulate the flow of data by sending a token in downstream data packets, the token allowing devices downstream from the respective at least one device to send an upstream data packet to the respective at least one device.
摘要翻译： 本公开包括用于设备到设备流控制的方法，设备和系统。 在一个或多个实施例中，被配置用于设备到设备流控制的系统包括主机和一连串设备，包括一个或多个存储器设备，它们彼此耦合并被配置为通过相同的主机端口与主机设备进行通信。 在一个或多个实施例中，链中的至少一个设备被配置为通过在下游数据分组中发送令牌来调节数据流，该令牌允许来自相应的至少一个设备的下游的设备将上游数据分组发送到 各自至少一个设备。
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35.发明申请METHODS, DEVICES, AND SYSTEMS FOR DEALING WITH THRESHOLD VOLTAGE CHANGE IN MEMORY DEVICES 有权用于处理存储器件中阈值电压变化的方法，器件和系统公开(公告)号：US20110051513A1
公开(公告)日：2011-03-03
申请号：US12547280
申请日：2009-08-25
申请人： Zhenlei Shen , William H. Radke , Peter Feeley
发明人： Zhenlei Shen , William H. Radke , Peter Feeley
CPC分类号： G11C16/34 , G11C11/5642 , G11C16/26 , G11C16/3495
摘要： The present disclosure includes methods, devices, and systems for dealing with threshold voltage change in memory devices. A number of embodiments include an array of memory cells and control circuitry having sense circuitry coupled to the array. The control circuitry is configured to determine changes in threshold voltages (Vts) associated with the memory cells without using a reference cell, and adjust the sense circuitry based on the determined changes and without using a reference cell.
摘要翻译： 本公开包括用于处理存储器件中的阈值电压变化的方法，器件和系统。 多个实施例包括具有耦合到阵列的感测电路的存储器单元阵列和控制电路。 控制电路被配置为确定与存储器单元相关联的阈值电压（Vts）的变化而不使用参考单元，并且基于所确定的变化并且不使用参考单元来调整感测电路。
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36.发明申请METHODS FOR CONTROLLING HOST MEMORY ACCESS WITH MEMORY DEVICES AND SYSTEMS 有权用于利用存储器件和系统来控制存储器存取的方法公开(公告)号：US20100312973A1
公开(公告)日：2010-12-09
申请号：US12477204
申请日：2009-06-03
IPC分类号： G06F12/00
CPC分类号： G06F3/0604 , G06F3/0659 , G06F3/0683 , G06F13/1642
摘要： The present disclosure includes methods for controlling host memory access with a memory device, systems, host controllers and memory devices. One embodiment for controlling host memory access with a memory device includes receiving at least one command from a host and controlling execution of the at least one command with the memory device.
摘要翻译： 本公开包括用于使用存储设备，系统，主机控制器和存储设备来控制主机存储器访问的方法。 用于使用存储器设备控制主机存储器访问的一个实施例包括从主机接收至少一个命令并且用该存储器设备控制至少一个命令的执行。
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公开(公告)号：US08327040B2
公开(公告)日：2012-12-04
申请号：US12359537
申请日：2009-01-26
CPC分类号： G06F3/061 , G06F3/0659 , G06F3/0685 , G06F13/28 , G06F13/32 , G06F13/385 , G06F13/4282
摘要： The present disclosure includes methods, devices, and systems for controlling a memory device. One method for controlling a memory device embodiment includes storing device class dependent information and a command in one or more of host system memory and host controller memory, setting a pointer to the command in a register in a host controller, directing access to the one or more of host system memory and host controller memory with the memory device via the host controller; and executing the command with the memory device.
摘要翻译： 本公开包括用于控制存储器设备的方法，设备和系统。 用于控制存储器件实施例的一种方法包括将设备类相关信息和命令存储在主机系统存储器和主机控制器存储器中的一个或多个中，在主机控制器中的寄存器中设置指向该命令的指针， 通过主机控制器更多的主机系统内存和主机控制器内存与存储设备; 并用存储器件执行命令。
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公开(公告)号：US08238244B2
公开(公告)日：2012-08-07
申请号：US12538607
申请日：2009-08-10
IPC分类号： H04L12/56
CPC分类号： H04L47/34 , H04L1/1867 , H04L47/27 , H04L69/324
摘要： The present disclosure includes methods, devices, and systems for packet processing. One method embodiment for packet flow control includes deconstructing a transport layer packet into a number of link-control layer packets, wherein each of the link-control layer packets has an associated sequence number, communicating the number of link-control layer packets via a common physical connection for a plurality of peripheral devices, and limiting a number of outstanding link-control layer packets during the communication.
摘要翻译： 本公开包括用于分组处理的方法，设备和系统。 用于分组流控制的一个方法实施例包括将传输层分组解构成多个链路控制层分组，其中链路控制层分组中的每一个具有相关联的序列号，经由共同的通信来传送链路控制层分组的数量 用于多个外围设备的物理连接，并且在通信期间限制多个未完成的链路控制层分组。
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39.发明申请METHODS, DEVICES, AND SYSTEMS FOR DEALING WITH THRESHOLD VOLTAGE CHANGE IN MEMORY DEVICES 有权用于处理存储器件中阈值电压变化的方法，器件和系统公开(公告)号：US20120069658A1
公开(公告)日：2012-03-22
申请号：US13305164
申请日：2011-11-28
申请人： Zhenlei Shen , William H. Radke , Peter Feeley
发明人： Zhenlei Shen , William H. Radke , Peter Feeley
CPC分类号： G11C16/34 , G11C11/5642 , G11C16/26 , G11C16/3495
摘要： The present disclosure includes methods, devices, and systems for dealing with threshold voltage change in memory devices. A number of embodiments include an array of memory cells and control circuitry having sense circuitry coupled to the array. The control circuitry is configured to determine changes in threshold voltages (Vts) associated with the memory cells without using a reference cell, and adjust the sense circuitry based on the determined changes and without using a reference cell.
摘要翻译： 本公开包括用于处理存储器件中的阈值电压变化的方法，装置和系统。 多个实施例包括具有耦合到阵列的感测电路的存储器单元阵列和控制电路。 控制电路被配置为确定与存储器单元相关联的阈值电压（Vts）的变化而不使用参考单元，并且基于所确定的变化并且不使用参考单元来调整感测电路。
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40.发明授权Methods, devices, and systems for dealing with threshold voltage change in memory devices 有权用于处理存储器件中阈值电压变化的方法，器件和系统公开(公告)号：US08077515B2
公开(公告)日：2011-12-13
申请号：US12547280
申请日：2009-08-25
申请人： Zhenlei Shen , William H. Radke , Peter Feeley
发明人： Zhenlei Shen , William H. Radke , Peter Feeley
IPC分类号： G11C16/06
CPC分类号： G11C16/34 , G11C11/5642 , G11C16/26 , G11C16/3495
摘要： The present disclosure includes methods, devices, and systems for dealing with threshold voltage change in memory devices. A number of embodiments include an array of memory cells and control circuitry having sense circuitry coupled to the array. The control circuitry is configured to determine changes in threshold voltages (Vts) associated with the memory cells without using a reference cell, and adjust the sense circuitry based on the determined changes and without using a reference cell.
摘要翻译： 本公开包括用于处理存储器件中的阈值电压变化的方法，装置和系统。 多个实施例包括具有耦合到阵列的感测电路的存储器单元阵列和控制电路。 控制电路被配置为确定与存储器单元相关联的阈值电压（Vts）的变化而不使用参考单元，并且基于所确定的变化并且不使用参考单元来调整感测电路。
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