摘要:
A wafer assembly includes a process wafer and a carrier wafer. Integrated circuits are formed on the process wafer. The carrier wafer is bonded to the process wafer. The carrier wafer has at least one alignment mark.
摘要:
A method and system to improve scanner throughput is provided. An image from a reticle is projected onto a substrate using a continuous linear scanning procedure in which an entire column of die or cells of die is scanned continuously, i.e. without stepping to a different location. Each scan includes translating a substrate with respect to a fixed beam. While the substrate is translated, the reticle is also translated. When a first die or cell of die is projected onto the substrate, the reticle translates along a direction opposite the scan direction and as the scan continues along the same direction, the reticle then translates in the opposite direction of the substrate thereby forming an inverted pattern on the next die or cell. The time associated with exposing the substrate is minimized as the stepping operation only occurs after a complete column of cells is scanned.
摘要:
A method of manufacturing a photomask is described. The graphic data of the photomask are provided, and than an optical proximity correction is performed to the graphic data. A process rule check is then performed to the graphic data with the optical proximity correction. When at least one failed pattern not passing the process rule check is found in the graphic data, a repair procedure is performed only to the failed pattern so that the failed pattern can pass the process rule check. The patterns of the photomask are then formed according to the corrected and repaired graphic data.
摘要:
A method for fabricating an integrated circuit device is disclosed. The method is a lithography patterning method that can include providing a substrate; forming a protective layer over the substrate; forming a conductive layer over the protective layer; forming a resist layer over the conductive layer; and exposing and developing the resist layer.
摘要:
A method of manufacturing a photomask is described. The graphic data of the photomask are provided, and than an optical proximity correction is performed to the graphic data. A process rule check is then performed to the graphic data with the optical proximity correction. When at least one failed pattern not passing the process rule check is found in the graphic data, a repair procedure is performed only to the failed pattern so that the failed pattern can pass the process rule check. The patterns of the photomask are then formed according to the corrected and repaired graphic data.
摘要:
A method for correcting a photomask pattern is disclosed. The correction method determines a layout condition according to the space and line width of a layout pattern. The layout condition is used to determine the type of optical proximity correction to be used for a layout pattern in order to generate a correction pattern, and the correction pattern is compared with a predetermined specification. Furthermore, a modified-rule optical proximity correction table is employed to correct the special layout pattern. Therefore, the fidelity correction may be easily implemented.
摘要:
A three-dimensional display including a display and a micro-lens is provided. The display has a plurality of pixel units thereon, and each pixel unit has a pixel pitch i. The micro-lens is disposed at a side of the display, the micro-lens has a plurality of lens units thereon, and each lens unit has a lens pitch l. A right eye viewing zone and a left eye viewing zone are formed if an image displayed from the display passes though the micro-lens, wherein a distance between the center of the right eye viewing zone and the center of the left eye viewing zone is wz, and lens pitch l satisfies: 2 i > l ≥ 2 i × w z w z + i , wz is between 70 and 500 mm and i is between 0.1 and 500 μm.
摘要:
An apparatus includes a radiation source that emits a radiation beam that causes substantially all of a quantity of material to evaporate; and structure having first and second surface portions, a first operational mode wherein a greater quantity of a byproduct of the evaporation impinges on the first surface portion, and a second operational mode wherein a greater quantity of the byproduct impinges on the second surface portion. A different aspect involves emitting a radiation beam toward a quantity of material, the radiation beam causing substantially all of the quantity of material to evaporate; operating a structure having first and second surface portions in a first operational mode wherein a greater quantity of a byproduct of the evaporation impinges on the first surface portion; and thereafter operating the structure in a second operational mode wherein a greater quantity of the byproduct impinges on the second surface portion.
摘要:
A method for fabricating an integrated circuit device is disclosed. The method is a lithography patterning method that can include providing a substrate; forming a protective layer over the substrate; forming a conductive layer over the protective layer; forming a resist layer over the conductive layer; and exposing and developing the resist layer.
摘要:
A three-dimensional display including a display and a micro-lens is provided. The display has a plurality of pixel units thereon, and each pixel unit has a pixel pitch i. The micro-lens is disposed at a side of the display, the micro-lens has a plurality of lens units thereon, and each lens unit has a lens pitch l. A right eye viewing zone and a left eye viewing zone are formed if an image displayed from the display passes though the micro-lens, wherein a distance between the center of the right eye viewing zone and the center of the left eye viewing zone is wz, and lens pitch l satisfies: 2 i > l > 2 i × w z w z + i , wz is between 70 and 500 mm and i is between 0.1 and 500 μm.