公开(公告)号：US20250096129A1

公开(公告)日：2025-03-20

申请号：US18589964

申请日：2024-02-28

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

Inventor： Tomoaki INOKUCHI ,  Tatsuo SHIMIZU ,  Yusuke KOBAYASHI ,  Shotaro BABA ,  Hiro GANGI ,  Hiroki NEMOTO ,  Taichi FUKUDA ,  Tatsuya NISHIWAKI

IPC: H01L23/528 ,  H01L23/532 ,  H01L29/812

Abstract: A semiconductor device includes a first conductive part, a second conductive part, a third conductive part, a first insulating part, and a semiconductor part of a first conductivity type. The second conductive part is separated from the first conductive part in a first direction. The third conductive part arranged with a portion of the second conductive part in a second direction crossing the first direction. The first insulating part includes a first insulating region located between the third conductive part and the portion of the second conductive part. The semiconductor part includes a first semiconductor region and a second semiconductor region. The first semiconductor region is located between the first conductive part and the second conductive part. The second semiconductor region is located between the first insulating region and the portion of the second conductive part. The second semiconductor region has a Schottky junction with the second conductive part.

公开(公告)号：US20240079459A1

公开(公告)日：2024-03-07

申请号：US18168956

申请日：2023-02-14

Applicant: Kabushiki Kaisha Toshiba

Inventor： Yusuke KOBAYASHI ,  Tomoaki INOKUCHI ,  Hiro GANGI ,  Shotaro BABA

IPC: H01L29/40 ,  H01L29/04 ,  H01L29/10 ,  H01L29/423

CPC classification number: H01L29/402 ,  H01L29/045 ,  H01L29/1095 ,  H01L29/42364

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode; a fourth electrode, a semiconductor member, a first conductive member, a second conductive member, and an insulating member. The semiconductor member includes first, second and third semiconductor regions. The first semiconductor region includes a first outer edge region, a first partial region, a second partial region, a third partial region, and a fourth partial region. The first, third and fourth partial regions are of a first conductivity type. The second semiconductor region is of a second conductivity type. The third semiconductor region is of the first conductivity type. The second conductive member includes a first conductive portion. The insulating member includes a first insulating region and a second insulating region. An electrical resistivity of the second partial region is higher than an electrical resistivity of the first partial region.

公开(公告)号：US20220293785A1

公开(公告)日：2022-09-15

申请号：US17395890

申请日：2021-08-06

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

Inventor： Yusuke KOBAYASHI ,  Tomoaki INOKUCHI ,  Hiro GANGI ,  Hiroki NEMOTO ,  Akihiro GORYU ,  Ryohei GEJO ,  Tsuyoshi KACHI ,  Tatsuya NISHIWAKI

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/06 ,  H01L29/40 ,  H01L29/165

Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, a conductive member, a semiconductor member, and an insulating member. The conductive member includes a conductive member end portion and a conductive member other-end portion. The conductive member end portion is between the first electrode and the conductive member other-end portion. The conductive member is electrically connected with one of the second electrode or the third electrode. The semiconductor member includes first to third semiconductor regions. The first semiconductor region includes first and second partial regions. The first partial region is between the first and second electrodes. The second semiconductor region is between the first partial region and the third semiconductor region. The third semiconductor region is electrically connected with the second electrode. A portion of the insulating member is between the semiconductor member and the third electrode and between the semiconductor member and the conductive member.

公开(公告)号：US20220190154A1

公开(公告)日：2022-06-16

申请号：US17395070

申请日：2021-08-05

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

Inventor： Yusuke KOBAYASHI ,  Akihiro GORYU ,  Ryohei GEJO ,  Hiro GANGI ,  Tomoaki INOKUCHI ,  Shotaro BABA ,  Tatsuya NISHIWAKI ,  Tsuyoshi KACHI

IPC: H01L29/78 ,  H01L29/40

Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, a first conductive member, a semiconductor member, and a first insulating member. The third electrode includes a third electrode end portion and a third electrode other-end portion. The first conductive member includes a first conductive member end portion and a first conductive member other-end portion. The first conductive member is electrically connected with one of the second electrode or the third electrode. The semiconductor member includes first to fourth semiconductor regions. The first semiconductor region includes first and second partial regions. The third semiconductor region is electrically connected with the second electrode. The fourth semiconductor region is electrically connected with the first electrode. At least a portion of the first insulating member is between the semiconductor member and the third electrode and between the semiconductor member and the first conductive member.

公开(公告)号：US20180219070A1

公开(公告)日：2018-08-02

申请号：US15883254

申请日：2018-01-30

Applicant: Kabushiki Kaisha Toshiba ,  Fuji Electric Co., Ltd.

Inventor： Keiko ARIYOSHI ,  Ryosuke IIJIMA ,  Sinya KYOGOKU ,  Shinsuke HARADA ,  Yusuke KOBAYASHI

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/78 ,  H01L29/10

CPC classification number: H01L29/1608 ,  H01L29/1095 ,  H01L29/66666 ,  H01L29/7802

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, first to fourth semiconductor regions and a first insulating film. The second electrode includes first, second, and third electrode regions. The first semiconductor region includes first, second, third, fourth, and fifth partial regions. The first partial region is separated from the first electrode. The second partial region is separated from the first electrode region. The fourth partial region is separated from the second electrode region. The second semiconductor region includes sixth, seventh, eighth and ninth partial regions. The third semiconductor region is connected to the second semiconductor region. The fourth semiconductor region is electrically connected to the second electrode. The fourth semiconductor region includes tenth, eleventh, and twelfth partial regions. The first insulating film is provided between the first, third, and fourth semiconductor regions.

公开(公告)号：US20160276584A1

公开(公告)日：2016-09-22

申请号：US14839873

申请日：2015-08-28

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yusuke KOBAYASHI

IPC: H01L45/00

CPC classification number: H01L23/5226 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/148

Abstract: A storage device includes a first wiring layer, a second wiring layer above the first wiring layer, a third wiring layer above the second wiring layer, a first contact in electrical contact with the first and third wiring layers and electrically insulated from the second wiring layer, a second contact in electrical contact with the first and second wiring layers and electrically insulated from the third wiring layer, and an insulating layer in contact with the second contact and above the third wiring layer, the first contact, and the second contact.

Abstract translation: 存储装置包括第一布线层，第一布线层上方的第二布线层，第二布线层上方的第三布线层，与第一布线层和第三布线层电接触并与第二布线层电绝缘的第一布线层 与第一和第二布线层电接触并与第三布线层电绝缘的第二触点，以及与第二触点接触并且在第三布线层，第一触点和第二触点之上的绝缘层。