公开(公告)号：US20230068711A1

公开(公告)日：2023-03-02

申请号：US17652981

申请日：2022-03-01

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Daimotsu KATO ,  Yosuke KAJIWARA ,  Hiroshi ONO ,  Aya SHINDOME ,  Akira MUKAI ,  Po-Chin HUANG ,  Masahiko KURAGUCHI ,  Tatsuo SHIMIZU

IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L29/205

摘要： According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, a first conductive member, first and second insulating members, and a first nitride member. A position of the third electrode in a first direction from the first to second electrodes is between positions of the first and second electrodes in the first direction. The semiconductor member includes first and second semiconductor regions. The first semiconductor region includes first to fifth partial regions. The second semiconductor region includes first and second semiconductor portions. The second semiconductor portion includes first and second portions, and a third portion between the first and second portions. The first conductive member includes first and second conductive regions. The first insulating member includes a first insulating region. The second insulating member includes first and second insulating portions. The first nitride member includes a first nitride region.

公开(公告)号：US20230022819A1

公开(公告)日：2023-01-26

申请号：US17652167

申请日：2022-02-23

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Yosuke KAJIWARA ,  Masahiko KURAGUCHI

IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66

摘要： According to one embodiment, a semiconductor device includes first to third electrodes, first and second semiconductor regions, a nitride region, and a first insulating member. The third electrode includes a first electrode portion. The first electrode portion is between the first electrode and the second electrode. The first semiconductor region includes first to sixth partial regions. The fourth partial region is between the first and third partial regions. The fifth partial region is between the third and second partial regions. The sixth partial region is between the fifth and second partial regions. The second semiconductor region includes first and second semiconductor portions. The second semiconductor portion is in contact with the fifth partial region. The nitride region includes a first nitride portion being in contact with the sixth partial region. The first insulating member includes a first insulating region between the third partial region and the first electrode portion.

公开(公告)号：US20220336630A1

公开(公告)日：2022-10-20

申请号：US17454306

申请日：2021-11-10

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Hiroshi ONO ,  Yosuke KAJIWARA ,  Masahiko KURAGUCHI

IPC分类号： H01L29/66 ,  H01L29/20 ,  H01L29/778 ,  H01L29/43

摘要： According to one embodiment, a semiconductor device includes a semiconductor member, a first conductive member, a first electrode, a first insulating member, and a second insulating member. The semiconductor member includes a first partial region, a second partial region, and a third partial region. The first partial region is between the second partial region the third partial region. The first conductive member includes a first conductive portion. The first conductive portion is between the second partial region and the third partial region. The first electrode is electrically connected to the first conductive member. The first electrode includes a first electrode portion, a second electrode portion, and a third electrode portion. The first insulating member includes a first insulating region, a second insulating region, and a third insulating region. The second insulating member includes a first insulating portion and a second insulating portion.

公开(公告)号：US20220190150A1

公开(公告)日：2022-06-16

申请号：US17158078

申请日：2021-01-26

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Matthew David SMITH ,  Hiroshi ONO ,  Yosuke KAJIWARA ,  Akira MUKAI ,  Masahiko KURAGUCHI

IPC分类号： H01L29/778 ,  H01L29/423

摘要： According to one embodiment, a semiconductor device includes first, second, third electrodes, a semiconductor member, and a first compound member. The third electrode is between the first and second electrodes in a first direction from the first to second electrodes. The semiconductor member includes first and second semiconductor regions. The first semiconductor region includes first, second, third, fourth, and fifth partial regions. A second direction from the first partial region to the first electrode crosses the first direction. The fourth partial region is between the first and third partial regions in the first direction. The fifth partial region is between the third and second partial regions in the first direction. The second semiconductor region includes first and second semiconductor portions. The first compound member includes first, second and third compound regions.

公开(公告)号：US20220140125A1

公开(公告)日：2022-05-05

申请号：US17576840

申请日：2022-01-14

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Daimotsu KATO ,  Hiroshi ONO ,  Tatsuo SHIMIZU ,  Yosuke KAJIWARA ,  Aya SHINDOME ,  Akira MUKAI ,  Po-Chin HUANG ,  Masahiko KURAGUCHI

IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/51

摘要： According to one embodiment, a semiconductor device includes first, second and third electrodes, first and second semiconductor layers, a first member, and a first insulating member. The first semiconductor layer includes Alx1Ga1-x1N (0≤x1

公开(公告)号：US20210327711A1

公开(公告)日：2021-10-21

申请号：US17141461

申请日：2021-01-05

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Yosuke KAJIWARA ,  Masahiko KURAGUCHI

IPC分类号： H01L21/02 ,  H01L29/20 ,  H01L29/40 ,  H01L29/04

摘要： According to one embodiment, a semiconductor device includes a first transistor, and a first mounting member. The first transistor includes a nitride semiconductor layer and includes a first element electrode, a second element electrode, and a third element electrode. The first mounting member includes a first frame electrode, a plurality of first frame connection members electrically connecting the first element electrode and the first frame electrode, a first pad electrode, and a first pad connection member electrically connecting the first element electrode and the first pad electrode.

公开(公告)号：US20170278934A1

公开(公告)日：2017-09-28

申请号：US15392210

申请日：2016-12-28

申请人： Kabushiki Kaisha Toshiba

发明人： Yosuke KAJIWARA ,  Kentaro IKEDA ,  Hisashi SAITO ,  Masahiko KURAGUCHI

IPC分类号： H01L29/417 ,  H01L23/535 ,  H01L29/423 ,  H01L29/778

CPC分类号： H01L29/4175 ,  H01L23/481 ,  H01L23/4824 ,  H01L23/535 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/7786

摘要： A semiconductor device according to an embodiment includes: a substrate having a first plane and a second plane provided on the opposite side of the first plane; a first nitride semiconductor layer provided on the first plane; source electrodes provided on the first nitride semiconductor layer; drain electrodes provided on the first nitride semiconductor layer, each of the drain electrodes provided between the source electrodes; gate electrodes provided on the first nitride semiconductor layer, each of the gate electrodes provided between each of the source electrodes and each of the drain electrodes; a first wire provided on the second plane and electrically connected to the source electrodes; a second wire electrically connected to the drain electrodes; a third wire provided on the second plane and electrically connected to the gate electrodes; and an insulating interlayer provided between the first nitride semiconductor layer and the second wire.