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    SEMICONDUCTOR DEVICE
    3.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20230246079A1

    公开(公告)日：2023-08-03

    申请号：US17820996

    申请日：2022-08-19

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Yosuke KAJIWARA ,  Masahiko KURAGUCHI ,  Aya SHINDOME ,  Hiroshi ONO

    IPC分类号： H01L29/20 ,  H01L29/778 ,  H01L29/423 ,  H01L23/482 ,  H01L29/205

    CPC分类号： H01L29/2003 ,  H01L29/7786 ,  H01L29/4238 ,  H01L23/4824 ,  H01L29/42316 ,  H01L29/205

    摘要： According to one embodiment, a semiconductor device includes a semiconductor member, an electrode portion, a pad portion, and first and second conductive members. The semiconductor member includes a first semiconductor layer and a second semiconductor layer. The electrode portion includes a source electrode, a gate electrode including a first gate portion, and a drain electrode. The first gate portion is between the source electrode and the drain electrode. The pad portion includes a drain pad. The first conductive member includes a first conductive portion. The drain pad is between the electrode portion and the first conductive portion. The second conductive member includes at least one of first to third conductive regions. The first conductive portion is between the drain pad and the first conductive region. The electrode portion is between the second conductive region and the third conductive region.

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20230061811A1

    公开(公告)日：2023-03-02

    申请号：US17652971

    申请日：2022-03-01

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Daimotsu KATO ,  Hiroshi ONO ,  Yosuke KAJIWARA ,  Aya SHINDOME ,  Akira MUKAI ,  Po-Chin HUANG ,  Masahiko KURAGUCHI ,  Tatsuo SHIMIZU

    IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L29/04

    摘要： According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, first and second insulating members, a compound member, and a nitride member. The third electrode is between the first and second electrodes. The semiconductor member includes first and second semiconductor regions. The first semiconductor region includes first to fifth partial regions. The second semiconductor region includes first and second semiconductor portions. The first insulating member includes first and second insulating portions. The first semiconductor portion is between the fourth partial region and the first insulating portion. The second semiconductor portion is between the fifth partial region and the second insulating portion. The compound member includes first to third compound portions. The nitride member includes first to third nitride portions. The second insulating member includes first and second insulating regions. The first and second insulating regions are between the nitride regions and the third electrode.

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    5.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20160284831A1

    公开(公告)日：2016-09-29

    申请号：US15056013

    申请日：2016-02-29

    申请人： Kabushiki Kaisha Toshiba

    发明人： Aya SHINDOME ,  Masahiko KURAGUCHI ,  Hisashi SAITO ,  Shigeto FUKATSU ,  Miki YUMOTO ,  Yosuke KAJIWARA

    IPC分类号： H01L29/778 ,  H01L29/205 ,  H01L29/423 ,  H01L21/265 ,  H01L21/266 ,  H01L21/76 ,  H01L29/66 ,  H01L29/20 ,  H01L29/06

    CPC分类号： H01L21/2654 ,  H01L21/7605 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/4236 ,  H01L29/7786

    摘要： A semiconductor device of an embodiment includes a first GaN-based semiconductor layer, a second GaN-based semiconductor layer provided on the first GaN-based semiconductor layer and having a larger bandgap than the first GaN-based semiconductor layer, a source electrode provided on the second GaN-based semiconductor layer, a drain electrode provided on the second GaN-based semiconductor layer, a recess provided between the source electrode and the drain electrode in the second GaN-based semiconductor layer, a gate insulating film provided on a surface of the recess, and a gate electrode provided on the gate insulating film and having an end portion in a gate width direction, located in the recess.

    摘要翻译： 实施例的半导体器件包括第一GaN基半导体层，设置在第一GaN基半导体层上并具有比第一GaN基半导体层更大的带隙的第二GaN基半导体层，设置在第一GaN基半导体层上的源电极 第二GaN基半导体层，设置在第二GaN基半导体层上的漏电极，设置在第二GaN基半导体层中的源极和漏电极之间的凹部，设置在第二GaN基半导体层的表面上的栅极绝缘膜 所述凹部和设置在所述栅极绝缘膜上并且具有位于所述凹部中的栅极宽度方向上的端部的栅电极。

    SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20230025093A1

    公开(公告)日：2023-01-26

    申请号：US17646799

    申请日：2022-01-03

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Yosuke KAJIWARA ,  Masahiko KURAGUCHI

    IPC分类号： H01L29/20 ,  H01L29/417 ,  H01L29/06

    摘要： According to one embodiment, a semiconductor device includes first, second, third nitride members, first, second, third electrodes, and a first insulating member. The first nitride member includes a first face along a first plane, a second face along the first plane, and a third face. The third face is connected with the first and second faces between the first and second faces. The third face crosses the first plane. The first face overlaps a part of the first nitride member. The second nitride member includes a first nitride region provided at the first face. The third nitride member includes a first nitride portion provided at the second face. The first electrode includes a first connecting portion. The second electrode includes a second connecting portion. The third electrode includes a first electrode portion. The first insulating member includes a first insulating region.

    SEMICONDUCTOR DEVICE
    8.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20230006058A1

    公开(公告)日：2023-01-05

    申请号：US17652124

    申请日：2022-02-23

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Yosuke KAJIWARA ,  Masahiko KURAGUCHI

    IPC分类号： H01L29/778 ,  H01L29/20

    摘要： According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, and a first insulating member. The third electrode is between the first and second electrodes. The semiconductor member includes first and second semiconductor regions. The first semiconductor region includes first to fifth partial regions. The fourth partial region is between the first and third partial regions. The fifth partial region is between the third and second partial regions. The second semiconductor region includes first and second semiconductor portions. The first insulating member includes first to third insulating regions. The fourth partial region includes a first facing region. The fifth partial region includes a second facing region. The first facing region includes a first element. The second facing region does not include the first element, or a concentration of the first element in the second facing region is lower than in the first facing region.

    SEMICONDUCTOR DEVICE
    9.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210184007A1

    公开(公告)日：2021-06-17

    申请号：US17013959

    申请日：2020-09-08

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Yosuke KAJIWARA ,  Masahiko KURAGUCHI ,  Akira MUKAI

    IPC分类号： H01L29/417 ,  H01L29/778 ,  H01L29/20 ,  H01L29/47 ,  H01L29/51 ,  H01L29/423

    摘要： According to one embodiment, a semiconductor device includes first, second and third electrodes, first and second semiconductor layers, first and second insulating members, and a first member. The third electrode includes a first electrode portion. The first electrode portion is between the first and second electrodes. The first semiconductor layer includes first, second, third, fourth, and fifth partial regions. The fourth partial region is between the first and third partial regions. The fifth partial region is between the third and second partial regions. The first insulating member includes first and second insulating regions. The second insulating member includes first and second insulating portions. The first insulating portion is between the fourth partial region and the first insulating region. The second insulating portion is between the fifth partial region and the second insulating region. The second semiconductor layer includes first, second, and third semiconductor portions.

    SEMICONDUCTOR DEVICE
    10.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200373422A1

    公开(公告)日：2020-11-26

    申请号：US16799901

    申请日：2020-02-25

    申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

    发明人： Masahiko KURAGUCHI ,  Yosuke KAJIWARA ,  Aya SHINDOME ,  Hiroshi ONO ,  Daimotsu KATO ,  Akira MUKAI

    IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/45 ,  H01L29/423 ,  H01L29/66

    摘要： According to one embodiment, a semiconductor device includes first, second and third electrodes, first and second semiconductor layers, a first conductive part, first and second insulating layers. The third electrode includes first and second portions. The first portion is between the first electrode and the second electrode. The first semiconductor layer includes first, second, third, fourth and fifth partial regions. The third partial region is between the first and second partial regions. The fourth partial region is between the first and third partial regions. The fifth partial region is between the third and second partial regions. The second semiconductor layer includes first and second semiconductor regions. The first conductive part is electrically connected to the first electrode. The first insulating layer includes a first insulating portion. The second insulating layer includes first and second insulating regions.