利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

254 条记录 (耗时 0.028 秒)

    Optical memory having narrowed track pitch
    34.
    发明授权
    Optical memory having narrowed track pitch 失效
    具有窄轨道间距的光学存储器

    公开(公告)号：US5676854A

    公开(公告)日：1997-10-14

    申请号：US688852

    申请日：1996-08-01

    申请人： Tetsuya Inui ,  Akira Takahashi ,  Kenji Ohta ,  Michinobu Mieda ,  Yoshiteru Murakami

    发明人： Tetsuya Inui ,  Akira Takahashi ,  Kenji Ohta ,  Michinobu Mieda ,  Yoshiteru Murakami

    IPC分类号： G11B7/0045 ,  G11B7/007 ,  G11B7/09 ,  G11B7/24 ,  G11B7/26 ,  G11B11/105

    CPC分类号： G11B7/261 ,  G11B11/10582 ,  G11B7/24 ,  G11B7/24079 ,  G11B7/26 ,  G11B7/00454 ,  G11B7/007 ,  G11B7/0938

    摘要： A transparent substrate of an optical memory is produced by injection molding using a stamper. Grooves and lands are alternately arranged on the optical memory, for tracking of light converged on the optical memory. The groove width is set in the range of 0.3 .mu.m to 0.4 .mu.m and the groove depth is set in the rage of 80 nm to 100 nm. A decrease in the width of a land at each edge is restrained to 0.2 .mu.m in maximum. With such dimensions, even when the track pitch is set to about 1.4 .mu.m, it is possible to obtain a track crossing signal with intensity sufficient for performing an access operation to a target track. Moreover, since the dimensions bring about an improved reflectance at a land, the optical memory achieves an improved C/N and recording density.

    摘要翻译： 通过使用压模的注射成型制造光学存储器的透明基板。 槽和焊盘交替布置在光学存储器上，用于跟踪会聚在光学存储器上的光。 槽宽度设定在0.3μm〜0.4μm的范围内，槽深度设定在80nm〜100nm的范围内。 每个边缘的陆地宽度减小最大限制在0.2亩。 利用这样的尺寸，即使当轨道间距设置为大约1.4μm时，也可以获得具有足以对目标轨道进行访问操作的强度的轨迹交叉信号。 此外，由于尺寸在陆地上产生改进的反射率，所以光学存储器实现了改进的C / N和记录密度。

    Optical disk with grooves and pits of different depths
    35.
    发明授权
    Optical disk with grooves and pits of different depths 失效
    具有凹槽和不同深度的凹坑的光盘

    公开(公告)号：US5500850A

    公开(公告)日：1996-03-19

    申请号：US346173

    申请日：1994-11-22

    申请人： Kazuo Van ,  Kenji Ohta ,  Tetsuya Inui ,  Toshikazu Nagaura ,  Hirotoshi Takemori ,  Hirotaka Toki

    发明人： Kazuo Van ,  Kenji Ohta ,  Tetsuya Inui ,  Toshikazu Nagaura ,  Hirotoshi Takemori ,  Hirotaka Toki

    IPC分类号： G11B7/013 ,  G11B7/26 ,  G11B7/24

    CPC分类号： G11B7/24085 ,  G11B7/261 ,  Y10S430/146

    摘要： An optical disk for use in an optical memory device having guide grooves and pits on one surface thereof, wherein the depth of the guide grooves is different from that of the pits and the distance from the bottom face of each of the guide grooves to the other surface of the optical disk opposite to the one surface of the optical disk on which the guide grooves and pits are disposed is the same as the distance from the bottom face of each of the pits to the other surface of the optical disk opposite to the one surface of the optical disk on which the guide grooves and pits are disposed, and a method for the production of optical memory master plates that are used for the production of the above-mentioned optical disk.

    摘要翻译： 一种用于光学存储器件的光盘，在其一个表面上具有引导凹槽和凹坑，其中引导槽的深度不同于凹坑的深度以及从每个引导槽的底面到另一个的距离 与设置有引导槽和凹坑的光盘的一个表面相对的光盘的表面与从每个凹坑的底面到与该光盘的相反的光盘的另一个表面的距离相同 其上设置有引导槽和凹坑的光盘的表面，以及用于制造用于生产上述光盘的光学存储器母板的方法。

    Method of manufacturing a photomask for an optical memory
    37.
    发明授权
    Method of manufacturing a photomask for an optical memory 失效
    制造光学存储器的光掩模的方法

    公开(公告)号：US5286583A

    公开(公告)日：1994-02-15

    申请号：US798616

    申请日：1991-11-26

    申请人： Junji Hirokane ,  Tetsuya Inui ,  Michinobu Mieda ,  Kenji Ohta

    发明人： Junji Hirokane ,  Tetsuya Inui ,  Michinobu Mieda ,  Kenji Ohta

    IPC分类号： G03F1/68 ,  G03F1/80 ,  G11B7/26 ,  H01L21/027 ,  H01L21/30 ,  G03F9/00

    CPC分类号： G11B7/261 ,  G03F1/00 ,  G03F1/26

    摘要： A method of manufacturing a photomask for an optical memory, the photomask having two types of pattern where guide tracks and formatting pits are different in amount of optical transmissions, including the steps of (a) forming on a transparent substrate a thin film of which light transmission amount depends upon its thickness; (b) forming a photoresist film on the thin film; (c) exposing the photoresist film to light with different light intensities depending selectively on the guide tracks or formatting pits; (d) eliminating the photoresist film exposed to the more intense light by the development till the thin film becomes surface; (e) etching the thin film exposed to the more intense light and surfaced; (f) eliminating the photoresist film till the thin film exposed to the less intense light becomes surface; (g) etching away the thin film exposed to the more intense light and surfaced till the transparent substrate becomes surface; and (h) eliminating the remnant photoresist.

    摘要翻译： 一种制造光存储器的光掩模的方法，所述光掩模具有两种类型的图案，其中导轨和格栅凹坑的光传输量不同，包括以下步骤：（a）在透明基板上形成薄膜， 传输量取决于其厚度; （b）在薄膜上形成光致抗蚀剂膜; （c）根据导轨或格式化凹坑选择性地将光致抗蚀剂膜暴露于具有不同光强度的光; （d）通过显影来消除暴露于更强光的光致抗蚀剂膜，直到薄膜变成表面; （e）蚀刻暴露于更强烈的光并露出的薄膜; （f）消除光致抗蚀剂膜，直到暴露于不太强光的薄膜变成表面; （g）蚀刻掉暴露于更强光的薄膜，并露出，直到透明基板变成表面; 和（h）消除残余光致抗蚀剂。