公开(公告)号：US07090961B2

公开(公告)日：2006-08-15

申请号：US10424269

申请日：2003-04-28

申请人： Tomohiro Kobayashi ,  Satoshi Watanabe ,  Tsunehiro Nishi ,  Youichi Ohsawa ,  Katsuhiro Kobayashi

发明人： Tomohiro Kobayashi ,  Satoshi Watanabe ,  Tsunehiro Nishi ,  Youichi Ohsawa ,  Katsuhiro Kobayashi

IPC分类号： G03F7/004 ,  G03F7/039 ,  C07D327/06

CPC分类号： G03F7/0045 ,  C07D327/06 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/0758

摘要： A high resolution resist material comprising an acid generator is provided so that high sensitivity and high resolution for high energy rays of 300 nm or less, small line-edge roughness, and excellence in heat stability and storage stability are obtained. Moreover, a pattern formation method using this resist material are provided. Specifically, a novel compound of the following general formula (1); and a positive resist material comprising this compound preferably as a photo acid generator, and a base resin; are provided. This positive resist material may contain a basic compound or a dissolution inhibitor. Further, the present invention provides a pattern formation method comprising the steps of applying this positive resist material on a substrate, then heat-treating the material, exposing the treated material to a high energy ray having a wavelength of 300 nm or less via a photo mask, optionally heat-treating the exposed material, and developing the material using a developer.

公开(公告)号：US08252504B2

公开(公告)日：2012-08-28

申请号：US12371455

申请日：2009-02-13

申请人： Yuji Harada ,  Jun Hatakeyama ,  Kazunori Maeda ,  Tomohiro Kobayashi

发明人： Yuji Harada ,  Jun Hatakeyama ,  Kazunori Maeda ,  Tomohiro Kobayashi

IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/38 ,  G03F7/11

CPC分类号： G03F7/0046 ,  C08F220/18 ,  C08F220/24 ,  C08F220/28 ,  G03F7/0392 ,  G03F7/0397

摘要： A polymer obtained through copolymerization of a monomer having a hexafluoroalcohol pendant whose hydroxyl moiety has been protected and a monomer having an acid labile group is useful as an additive to a photoresist composition for immersion lithography. When processed by immersion lithography, the resist composition exhibits good water repellency and water slip and produces few development defects.

摘要翻译： 通过使具有羟基部分被保护的六氟醇侧基的单体和具有酸不稳定基团的单体的共聚合得到的聚合物可用作浸渍光刻用光致抗蚀剂组合物的添加剂。 当通过浸渍光刻处理时，抗蚀剂组合物表现出良好的拒水性和水滑动，并且产生很少的显影缺陷。

公开(公告)号：US08043788B2

公开(公告)日：2011-10-25

申请号：US12167151

申请日：2008-07-02

申请人： Tomohiro Kobayashi ,  Jun Hatakeyama ,  Yuji Harada

发明人： Tomohiro Kobayashi ,  Jun Hatakeyama ,  Yuji Harada

IPC分类号： G03F7/004 ,  G03F7/30

CPC分类号： G03F7/0382 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/11 ,  G03F7/2041 ,  Y10S430/108 ,  Y10S430/111

摘要： To a resist composition comprising a polymer which changes its alkali solubility under the action of an acid as a base resin, is added a copolymer comprising recurring units containing amino and recurring units containing α-trifluoromethylhydroxy as an additive. The composition is suited for immersion lithography.

摘要翻译： 对于包含在酸作为基础树脂的作用下改变其碱溶解性的聚合物的抗蚀剂组合物，加入含有氨基的重复单元和含有α-三氟甲基羟基作为添加剂的重复单元的共聚物。 该组合物适用于浸没光刻。

公开(公告)号：US07598016B2

公开(公告)日：2009-10-06

申请号：US12053292

申请日：2008-03-21

申请人： Tomohiro Kobayashi ,  Jun Hatakeyama ,  Yuji Harada

发明人： Tomohiro Kobayashi ,  Jun Hatakeyama ,  Yuji Harada

IPC分类号： G03F7/004 ,  G03F7/30

CPC分类号： G03F7/0046 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/2041 ,  Y10S430/108 ,  Y10S430/111 ,  Y10S430/12 ,  Y10S430/121

摘要： To a resist composition comprising a polymer which changes its alkali solubility under the action of an acid as a base resin, is added a copolymer comprising recurring units containing a carboxylic acid ammonium salt and recurring units containing at least one fluorine atom as an additive. The composition is suited for immersion lithography.

摘要翻译： 对于包含在酸作为基础树脂的作用下改变其碱溶解性的聚合物的抗蚀剂组合物，添加包含含有羧酸铵盐的重复单元和含有至少一个氟原子的重复单元作为添加剂的共聚物。 该组合物适用于浸没光刻。

公开(公告)号：US09207534B2

公开(公告)日：2015-12-08

申请号：US13349754

申请日：2012-01-13

申请人： Masayoshi Sagehashi ,  Jun Hatakeyama ,  Takeru Watanabe ,  Tomohiro Kobayashi

发明人： Masayoshi Sagehashi ,  Jun Hatakeyama ,  Takeru Watanabe ,  Tomohiro Kobayashi

IPC分类号： G03F7/039 ,  G03F7/004 ,  G03F7/30 ,  G03F7/20 ,  C07D211/44

CPC分类号： G03F7/0397 ,  C07D211/44 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/2037 ,  G03F7/2039 ,  G03F7/2041 ,  G03F7/30

摘要： A chemically amplified positive resist composition of better performance can be formulated using a polymer having a quencher incorporated therein, specifically a polymer comprising recurring units having a carbamate structure which is decomposed with an acid to generate an amino group and optionally recurring units having an acid labile group capable of generating a carboxyl and/or hydroxyl group under the action of an acid. The polymer is highly effective for suppressing diffusion of acid and diffuses little itself, and the composition forms a pattern of rectangular profile at a high resolution.

摘要翻译： 具有更好性能的化学放大型正性抗蚀剂组合物可以使用其中掺入猝灭剂的聚合物，特别是包含具有氨基甲酸酯结构的重复单元的聚合物来配制，该聚合单元用酸分解以产生氨基，以及任选的具有酸不稳定性的重复单元 能够在酸的作用下产生羧基和/或羟基的基团。 该聚合物对于抑制酸的扩散非常有效，并且自身扩散，并且组合物以高分辨率形成矩形轮廓的图案。

公开(公告)号：US08828647B2

公开(公告)日：2014-09-09

申请号：US13482650

申请日：2012-05-29

申请人： Jun Hatakeyama ,  Tomohiro Kobayashi

发明人： Jun Hatakeyama ,  Tomohiro Kobayashi

IPC分类号： G03F7/038 ,  G03F7/11 ,  G03F7/30 ,  G03F7/32 ,  G03F7/20 ,  G03F7/38 ,  G03F7/004 ,  G03F7/039

CPC分类号： G03F7/004 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/039 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/20 ,  G03F7/2004 ,  G03F7/2006 ,  G03F7/2008 ,  G03F7/2022 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/38 ,  G03F7/70466

摘要： A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer comprising recurring units having an acid labile group-substituted carboxyl group and/or hydroxy group and recurring units having an oxirane or oxetane ring, an acid generator, and an organic solvent displays a high dissolution contrast in organic solvent development and controlled acid diffusion. A fine hole pattern featuring good size control can be formed.

摘要翻译： 通过将抗蚀剂组合物施加到基材上，预烘烤，暴露于高能辐射，烘烤（PEB）和在有机溶剂显影剂中显影曝光的抗蚀剂膜以溶解抗蚀剂膜的未曝光区域来形成负图案。 包含具有酸不稳定基团取代的羧基和/或羟基的重复单元的聚合物和具有环氧乙烷或氧杂环丁烷环的重复单元，酸产生剂和有机溶剂的抗蚀剂组合物在有机溶剂显影中显示高溶解度对比度 并控制酸扩散。 可以形成具有良好尺寸控制的细孔图案。

公开(公告)号：US20120276485A1

公开(公告)日：2012-11-01

申请号：US13456705

申请日：2012-04-26

申请人： Tomohiro Kobayashi ,  Jun Hatakeyama ,  Takeshi Nagata

发明人： Tomohiro Kobayashi ,  Jun Hatakeyama ,  Takeshi Nagata

IPC分类号： G03F7/20

CPC分类号： G03F7/0397

摘要： A negative pattern is formed by applying a resist composition onto a substrate, baking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to selectively dissolve the unexposed region of resist film. The resist composition comprising a hydrogenated ROMP polymer and a (meth)acrylate resin displays a high dissolution contrast in organic solvent development, and exhibits high dry etch resistance even when the acid labile group is deprotected through exposure and PEB.

摘要翻译： 通过将抗蚀剂组合物涂布在基材上，烘烤，暴露于高能量辐射，烘烤（PEB）和在有机溶剂显影剂中曝光的抗蚀剂膜显影以选择性地溶解抗蚀剂膜的未曝光区域，形成负型图案。 包含氢化ROMP聚合物和（甲基）丙烯酸酯树脂的抗蚀剂组合物在有机溶剂显影中表现出高的溶解对比度，并且即使当酸不稳定基团通过曝光和PEB脱保护时也显示出高的耐干蚀刻性。

公开(公告)号：US20130101936A1

公开(公告)日：2013-04-25

申请号：US13616317

申请日：2012-09-14

申请人： Ryosuke Taniguchi ,  Tomohiro Kobayashi ,  Jun Hatakeyama ,  Kenji Funatsu ,  Masahiro Kanayama

发明人： Ryosuke Taniguchi ,  Tomohiro Kobayashi ,  Jun Hatakeyama ,  Kenji Funatsu ,  Masahiro Kanayama

IPC分类号： G03F7/004 ,  G03F7/20

CPC分类号： G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041

摘要： A positive resist composition comprising (A) a polymer comprising recurring units containing an acid labile group, recurring units having a lactone ring, and recurring units having an oxirane ring, the polymer being adapted to increase alkaline dissolution under the action of an acid, (B) a photoacid generator, and (C) a solvent forms a fine pattern with improved LWR, improved MEF, rectangular profile, and collapse resistance.

摘要翻译： 一种正型抗蚀剂组合物，其包含（A）包含含有酸不稳定基团的重复单元的聚合物，具有内酯环的重复单元和具有环氧乙烷环的重复单元的聚合物，所述聚合物适于在酸的作用下增加碱溶解性（ B）光致酸发生器，（C）溶剂形成具有改善的LWR，改进的MEF，矩形轮廓和抗倒塌性的精细图案。

公开(公告)号：US06455223B1

公开(公告)日：2002-09-24

申请号：US09534351

申请日：2000-03-24

申请人： Jun Hatakeyama ,  Tomohiro Kobayashi ,  Osamu Watanabe ,  Takanobu Takeda ,  Toshinobu Ishihara ,  Jun Watanabe

发明人： Jun Hatakeyama ,  Tomohiro Kobayashi ,  Osamu Watanabe ,  Takanobu Takeda ,  Toshinobu Ishihara ,  Jun Watanabe

IPC分类号： G03F7039

CPC分类号： G03F7/039 ,  G03F7/0045 ,  G03F7/038 ,  Y10S430/106

摘要： A resist composition comprising a dendritic or hyperbranched polymer of a phenol derivative having a weight average molecular weight of 500-10,000,000 has an excellent resolution, reduced line edge roughness, and dry etching resistance and is useful as a chemical amplification type resist composition which may be either positive or negative working.

摘要翻译： 包含重均分子量为500-10,000,000的苯酚衍生物的树枝状或超支化聚合物的抗蚀剂组合物具有优异的分辨率，线边缘粗糙度和耐干蚀刻性，并且可用作化学放大型抗蚀剂组合物，其可以是 正面或负面工作。

公开(公告)号：US06414101B1

公开(公告)日：2002-07-02

申请号：US09535166

申请日：2000-03-24

申请人： Osamu Watanabe ,  Takanobu Takeda ,  Jun Hatakeyama ,  Tomohiro Kobayashi ,  Toshinobu Ishihara ,  Jun Watanabe

发明人： Osamu Watanabe ,  Takanobu Takeda ,  Jun Hatakeyama ,  Tomohiro Kobayashi ,  Toshinobu Ishihara ,  Jun Watanabe

IPC分类号： C08F21214

CPC分类号： C08F257/02 ,  C08F290/04 ,  C08F297/02

摘要： A dendritic or hyperbranched polymer having a weight average molecular weight of 500-10,000,000 is prepared by polymerizing a hydroxystyrene derivative, adding a branching monomer midway in the polymerization step to introduce branch chains, and repeating the polymerizing and branching steps. The polymer is advantageously used as the base resin of resist material because the size of the polymer can be reduced while maintaining strength.

摘要翻译： 通过聚合羟基苯乙烯衍生物，在聚合步骤中途加入支化单体以引入支链并重复聚合和分支步骤，制备重均分子量为500-10,000,000的树枝状或超支化聚合物。 聚合物有利地用作抗蚀剂材料的基础树脂，因为可以在保持强度的同时降低聚合物的尺寸。