公开(公告)号：US08456401B2

公开(公告)日：2013-06-04

申请号：US12222339

申请日：2008-08-07

申请人： Katsumi Matsumoto ,  Kozo Yasuda ,  Yasukazu Kimura ,  Takuo Kaitoh ,  Toshihiko Itoga ,  Hiroshi Kageyama

发明人： Katsumi Matsumoto ,  Kozo Yasuda ,  Yasukazu Kimura ,  Takuo Kaitoh ,  Toshihiko Itoga ,  Hiroshi Kageyama

IPC分类号： G09G3/36 ,  H01L31/00 ,  H01L31/036

CPC分类号： H01L29/78618 ,  G02F1/13454 ,  G02F2001/13685 ,  G02F2202/104 ,  H01L27/12 ,  H01L29/78645 ,  H01L29/78696

摘要： The gate electrode is formed above the polycrystalline semiconductor layer through the gate insulating film. The polycrystalline semiconductor layer includes a first region overlapping with the gate electrode in plan view. The first region is sandwiched between the second region and the third region. The second region of the polycrystalline semiconductor layer includes a first impurity diffusion region and two second impurity diffusion regions opposite in conductivity type to the first impurity diffusion region. The first region and the first impurity diffusion region are in contact with each other at a first boundary. The first region and the two second impurity diffusion regions are in contact with each other at second boundaries. The two second impurity diffusion regions sandwiching the first impurity diffusion region are provided along the gate electrode. Thus, a leak current is suppressed.

公开(公告)号：US08203518B2

公开(公告)日：2012-06-19

申请号：US12392136

申请日：2009-02-25

申请人： Kozo Yasuda ,  Katsumi Matsumoto

发明人： Kozo Yasuda ,  Katsumi Matsumoto

IPC分类号： G09G3/36

CPC分类号： G09G3/20 ,  G09G3/3266 ,  G09G3/3275 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0408 ,  G09G2300/0417 ,  G09G2310/0267 ,  G09G2310/0275 ,  G09G2310/0289

摘要： Provided is a display device including a level shift circuit, which includes a thin film transistor having a polycrystalline semiconductor layer, and which realizes a reliable operation even when a threshold of the thin film transistor varies. The display device includes: a board; and the level shift circuit which includes the thin film transistor having the polycrystalline semiconductor layer, and is formed on the board, in which the level shift circuit includes: a plurality of source-input level shift circuits including a plurality of unit level shift circuits having drain resistors different in value from one another; and a selection circuit, which selects one of outputs from the plurality of unit level shift circuits as an output from a normally operated unit level shift circuit.

摘要翻译： 提供了一种包括电平移位电路的显示装置，其包括具有多晶半导体层的薄膜晶体管，并且即使当薄膜晶体管的阈值变化时也实现可靠的操作。 显示装置包括：板; 以及电平移位电路，其包括具有多晶半导体层的薄膜晶体管，并且形成在电路板上，其中电平移位电路包括：多个源极输入电平移位电路，包括多个单位电平移位电路，其具有 漏极电阻值彼此不同; 以及选择电路，其从所述多个单位电平移位电路中选择一个输出作为来自正常操作的单位电平移位电路的输出。

公开(公告)号：US20110015450A1

公开(公告)日：2011-01-20

申请号：US12677142

申请日：2008-08-29

申请人： Kunihiko Morizane ,  Tatsuo Shirahata ,  Kozo Yasuda

发明人： Kunihiko Morizane ,  Tatsuo Shirahata ,  Kozo Yasuda

IPC分类号： C07C29/14 ,  B01J25/00

CPC分类号： C07C29/145 ,  B01J25/00 ,  B01J25/02 ,  B01J37/06 ,  C07C31/10

摘要： Processes of the invention provide alcohols such as isopropyl alcohol with high purity and little by-product impurities by reacting a ketone such as acetone and hydrogen.The process for producing alcohols includes catalytically hydrogenating a ketone in the presence of a catalyst into an alcohol, and the catalyst is an acid-treated Raney catalyst obtained by contact-treating a Raney catalyst with an acid.

摘要翻译： 本发明的方法通过使酮如丙酮和氢反应来提供具有高纯度和少量副产物杂质的醇，例如异丙醇。 制备醇的方法包括在催化剂存在下将酮催化氢化成醇，并且该催化剂是通过用阮内催化剂与酸接触处理得到的经酸处理的阮内催化剂。

公开(公告)号：US07839373B2

公开(公告)日：2010-11-23

申请号：US12155357

申请日：2008-06-03

申请人： Kozo Yasuda ,  Katsumi Matsumoto

发明人： Kozo Yasuda ,  Katsumi Matsumoto

IPC分类号： G09G3/18

CPC分类号： G09G3/3655 ,  G09G2300/0809 ,  G09G2300/0823 ,  G09G2300/0857 ,  G09G2320/0257

摘要： A display device which arranges a memory part for every display pixel is configured to prevent a charge from remaining in liquid crystal when a power source is turned off. Each display pixel includes a memory part for storing video data, a pixel electrode, and a switch part for selectively applying a first video voltage or a second video voltage different from the first video voltage to the pixel electrode corresponding to the video data stored in the memory part. The display device further includes a reset circuit for allowing the first video voltage and the second video voltage to have the same voltage when a power source of the display device is turned off.

摘要翻译： 配置每个显示像素的存储部分的显示装置被配置为当电源关闭时防止电荷残留在液晶中。 每个显示像素包括用于存储视频数据的存储器部分，像素电极和开关部分，用于选择性地将与第一视频电压不同的第一视频电压或第二视频电压施加到与存储在视频数据中的视频数据相对应的像素电极 记忆部分。 显示装置还包括复位电路，用于当显示装置的电源关闭时允许第一视频电压和第二视频电压具有相同的电压。

公开(公告)号：US20090213061A1

公开(公告)日：2009-08-27

申请号：US12379362

申请日：2009-02-19

申请人： Kozo Yasuda

发明人： Kozo Yasuda

IPC分类号： G09G3/36

CPC分类号： G09G3/2096 ,  G09G3/3607 ,  G09G3/3648 ,  G09G3/3677 ,  G09G2330/022

摘要： A display device is provided comprising a plurality of pixels disposed in a matrix form in a display area of a substrate, each of the plurality of pixels having a memory which stores written data, a scan line which is provided common to pixels arranged along a row direction and through which a scan signal is supplied to the pixels, and an image line which is provided common to pixels arranged along a column direction and through which an image signal is supplied to the pixels, wherein the scan signal is supplied to the scan line through a vertical address circuit or a vertical shift register circuit, and data is supplied to the image line through a horizontal scan shift register circuit.

摘要翻译： 提供了一种显示装置，其包括以矩阵形式设置在基板的显示区域中的多个像素，所述多个像素中的每一个具有存储写入数据的存储器，沿着行排列的像素共同设置的扫描线 方向，扫描信号通过其提供给像素，以及图像线，其被设置为沿着列方向布置的像素，并且图像信号通过该像素提供给像素，其中扫描信号被提供给扫描线 通过垂直地址电路或垂直移位寄存器电路，通过水平扫描移位寄存器电路将数据提供给图像线。

公开(公告)号：US20090073149A1

公开(公告)日：2009-03-19

申请号：US12222339

申请日：2008-08-07

申请人： Katsumi Matsumoto ,  Kozo Yasuda ,  Yasukazu Kimura ,  Takuo Kaitoh ,  Toshihiko Itoga ,  Hiroshi Kageyama

发明人： Katsumi Matsumoto ,  Kozo Yasuda ,  Yasukazu Kimura ,  Takuo Kaitoh ,  Toshihiko Itoga ,  Hiroshi Kageyama

IPC分类号： G09G5/00 ,  H01L29/04

CPC分类号： H01L29/78618 ,  G02F1/13454 ,  G02F2001/13685 ,  G02F2202/104 ,  H01L27/12 ,  H01L29/78645 ,  H01L29/78696

摘要： The gate electrode is formed above the polycrystalline semiconductor layer through the gate insulating film. The polycrystalline semiconductor layer includes a first region overlapping with the gate electrode in plan view. The first region is sandwiched between the second region and the third region. The second region of the polycrystalline semiconductor layer includes a first impurity diffusion region and two second impurity diffusion regions opposite in conductivity type to the first impurity diffusion region. The first region and the first impurity diffusion region are in contact with each other at a first boundary. The first region and the two second impurity diffusion regions are in contact with each other at second boundaries. The two second impurity diffusion regions sandwiching the first impurity diffusion region are provided along the gate electrode. Thus, a leak current is suppressed.

摘要翻译： 栅电极通过栅极绝缘膜形成在多晶半导体层的上方。 多晶半导体层包括在平面图中与栅电极重叠的第一区域。 第一区域夹在第二区域和第三区域之间。 多晶半导体层的第二区域包括第一杂质扩散区域和与第一杂质扩散区域相反的导电类型的两个第二杂质扩散区域。 第一区域和第一杂质扩散区域在第一边界处彼此接触。 第一区域和第二第二杂质扩散区域在第二边界处彼此接触。 夹着第一杂质扩散区的两个第二杂质扩散区沿着栅电极设置。 因此，泄漏电流被抑制。

公开(公告)号：US20090045406A1

公开(公告)日：2009-02-19

申请号：US12189918

申请日：2008-08-12

申请人： Katsumi Matsumoto ,  Kozo Yasuda

发明人： Katsumi Matsumoto ,  Kozo Yasuda

IPC分类号： H01L29/786 ,  H01L33/00

CPC分类号： H01L29/7391

摘要： A semiconductor device which can realize a diode function is provided with a manufacturing process of a polysilicon thin film transistor and without adding a dedicated process. A semiconductor device is provided having a semiconductor layer comprising a low-concentration p-type polysilicon region formed over a substrate, the semiconductor device comprising a high-concentration p-type polysilicon region and a high-concentration n-type polysilicon region which are formed over the substrate on both sides of the low-concentration p-type polysilicon region, an insulating film which is formed over the high-concentration p-type polysilicon region, the low-concentration p-type polysilicon region, and the high-concentration n-type polysilicon region, and a control electrode which is formed over the insulating film and over the low-concentration p-type polysilicon region, wherein the control electrode is electrically connected to one of the high-concentration p-type polysilicon region and the high-concentration n-type polysilicon region.

摘要翻译： 可以实现二极管功能的半导体器件具有多晶硅薄膜晶体管的制造工艺，并且不添加专用工艺。 提供一种半导体器件，其具有包括在衬底上形成的低浓度p型多晶硅区域的半导体层，该半导体器件包括形成的高浓度p型多晶硅区域和高浓度n型多晶硅区域 在低浓度p型多晶硅区域的两侧的衬底上，形成在高浓度p型多晶硅区域上的绝缘膜，低浓度p型多晶硅区域和高浓度p型多晶硅区域 型多晶硅区域，以及控制电极，其形成在绝缘膜上方和低浓度p型多晶硅区域上，其中控制电极电连接到高浓度p型多晶硅区域和高浓度p型多晶硅区域中的一个 浓度n型多晶硅区域。

公开(公告)号：US20080303762A1

公开(公告)日：2008-12-11

申请号：US12155357

申请日：2008-06-03

申请人： Kozo Yasuda ,  Katsumi Matsumoto

发明人： Kozo Yasuda ,  Katsumi Matsumoto

IPC分类号： G09G3/36 ,  G09G5/00

CPC分类号： G09G3/3655 ,  G09G2300/0809 ,  G09G2300/0823 ,  G09G2300/0857 ,  G09G2320/0257

摘要： A display device which arranges a memory part for every display pixel is configured to prevent a charge from remaining in liquid crystal when a power source is turned off. Each display pixel includes a memory part for storing video data, a pixel electrode, and a switch part for selectively applying a first video voltage or a second video voltage different from the first video voltage to the pixel electrode corresponding to the video data stored in the memory part. The display device further includes a reset circuit for allowing the first video voltage and the second video voltage to have the same voltage when a power source of the display device is turned off.

摘要翻译： 配置每个显示像素的存储部分的显示装置被配置为当电源关闭时防止电荷残留在液晶中。 每个显示像素包括用于存储视频数据的存储器部分，像素电极和开关部分，用于选择性地将与第一视频电压不同的第一视频电压或第二视频电压施加到与存储在视频数据中的视频数据相对应的像素电极 记忆部分。 显示装置还包括复位电路，用于当显示装置的电源关闭时允许第一视频电压和第二视频电压具有相同的电压。

公开(公告)号：US06259854B1

公开(公告)日：2001-07-10

申请号：US09147596

申请日：1999-01-29

申请人： Osamu Shinji ,  Toshitaka Kunisawa ,  Toshiyuki Yoshikawa ,  Kozo Yasuda

发明人： Osamu Shinji ,  Toshitaka Kunisawa ,  Toshiyuki Yoshikawa ,  Kozo Yasuda

IPC分类号： G02B600

CPC分类号： G02B6/0036 ,  G02B6/00 ,  G02B6/0001 ,  G02B6/0061 ,  G02B6/0065 ,  Y10S385/901

摘要： A lightguide which guides light from at least one side end plane and includes a plurality of approximately trapezoidal protrusions whose apex edge in the cross section perpendicular to the axis of a linear light source has a partially straight section. The approximately trapezoidal protrusions are arranged on the rear surface of the lightguide, opposing a light emitting surface. The approximately trapezoidal protrusions are arranged in a pattern of specks, solid lines, or broken lines. The pattern has a low area density in a region neighboring the at least one side end plane and at a high area density in a region removed from the at least one side end plane such that the luminance distribution of the light emitted from the light emitting surface is approximately uniform. Preferably, the approximately trapezoidal protrusions have, in the same cross section, two rounded corners, and the roughness of the surface that includes the apex edge of the protrusions, the roughness of the rear surface excluding the protrusions, is less than 0.2 &mgr;m, the ratio of the height H to the width W of the approximately trapezoidal protrusions in the same cross-section be 0.1≦H/W≦0.6, and the width W is 20 &mgr;m≦W≦200 &mgr;m.

摘要翻译： 导光体，其从至少一个侧端平面引导光，并且包括多个大致梯形的突起，其在与线性光源的轴线垂直的横截面中的顶点具有部分直的部分。 近似梯形的突起布置在光导的后表面上，与发光表面相对。 大致梯形突起以斑点，实线或虚线的图案排列。 该图案在与至少一个侧端面相邻的区域中具有低面积密度，并且在从至少一个侧端面去除的区域中具有高面积密度，使得从发光表面发射的光的亮度分布 大致均匀。 优选地，大致梯形突起在相同的横截面中具有两个圆角，并且包括突起的顶点的表面的粗糙度，除突起之外的后表面的粗糙度小于0.2μm， 相同横截面中大致梯形突起的高度H与宽度W的比值为0.1 <= H / W <= 0.6，宽度W为20μm<= W <=200μm。