公开(公告)号：US08670082B2

公开(公告)日：2014-03-11

申请号：US13242283

申请日：2011-09-23

申请人： Takeshi Noda ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Takeshi Sakai

发明人： Takeshi Noda ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Takeshi Sakai

IPC分类号： G02F1/136 ,  H01L29/04

CPC分类号： H01L29/66765 ,  G02F1/136209 ,  H01L29/78633

摘要： A thin film transistor, a display device and a liquid crystal display device are provided. The thin film transistor includes a gate electrode film onto which light from a light source is irradiated, a semiconductor film formed on the gate electrode film and on an opposite side to the light source side through an insulating film, first and second electrode films formed to be in electrical contact with the semiconductor film, and a first shielding film formed in a same layer as the gate electrode film and electrically isolated from the gate electrode film, wherein the first shielding film overlaps a part of the semiconductor film as seen from the light irradiation direction and also overlaps at least a part of the first electrode film as seen from the light irradiation direction.

摘要翻译： 提供薄膜晶体管，显示装置和液晶显示装置。 薄膜晶体管包括：栅极电极膜，其上照射有来自光源的光，通过绝缘膜形成在栅极电极膜上并且在与光源侧相反的一侧的半导体膜，第一和第二电极膜形成为 与半导体膜电接触;以及第一屏蔽膜，其形成在与栅极电极膜相同的层中并与栅极电极膜电隔离，其中第一屏蔽膜与从该光看到的半导体膜的一部分重叠 照射方向，并且从光照射方向观察，还与第一电极膜的至少一部分重叠。

公开(公告)号：US08530898B2

公开(公告)日：2013-09-10

申请号：US12912799

申请日：2010-10-27

申请人： Takeshi Noda ,  Takuo Kaitoh

发明人： Takeshi Noda ,  Takuo Kaitoh

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00

CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L29/78621 ,  H01L29/78627

摘要： A display device which uses a TFT having a gate electrode film thereof arranged on a light source side can also suppress the increase of parasitic capacitance while suppressing the generation of a light leakage current. On at least one end of the TFT, between a high concentration region which constitutes a source region or a drain region and a channel region, a first low concentration region which is arranged on a high concentration region side and exhibits low impurity concentration and a second low concentration region which exhibits impurity concentration even lower than the impurity concentration of the first low concentration region are provided in this order.

摘要翻译： 使用其中设置在光源侧的具有栅电极膜的TFT的显示装置也可以抑制寄生电容的增加同时抑制漏光电流的产生。 在TFT的至少一端，在构成源极区域或漏极区域的高浓度区域和沟道区域之间，配置在高浓度区域侧且显示低杂质浓度的第一低浓度区域和第二 按照该顺序设置表现出比第一低浓度区域的杂质浓度更低的杂质浓度的低浓度区域。

公开(公告)号：US08368077B2

公开(公告)日：2013-02-05

申请号：US12578641

申请日：2009-10-14

申请人： Takeshi Kuriyagawa ,  Takeshi Noda ,  Takuo Kaitoh

发明人： Takeshi Kuriyagawa ,  Takeshi Noda ,  Takuo Kaitoh

IPC分类号： H01L27/14

CPC分类号： H01L27/124 ,  H01L27/1248 ,  H01L29/66765

摘要： A second insulation layer which is formed by stacking a plurality of layers made of different materials in a mutually contact manner is formed such that the second insulation layer covers a source region and a drain region and also covers a gate electrode from above. A first contact hole which reaches one of the source region and the drain region and a recessed portion which is arranged above the gate electrode but is not communicated with the gate electrode are simultaneously formed on the second insulation layer by dry etching. A first line layer is formed so as to cover the first contact hole. After forming the first line layer, a bottom surface of the recessed portion is etched by dry etching thus forming a second contact hole which reaches the gate electrode in the first and second insulation layers. A second line layer is formed on the second contact hole.

摘要翻译： 形成通过以相互接触的方式堆叠由不同材料制成的多个层而形成的第二绝缘层，使得第二绝缘层覆盖源极区域和漏极区域并且还从上方覆盖栅极电极。 通过干法蚀刻在第二绝缘层上同时形成到达源极区域和漏极区域中的一个的第一接触孔和设置在栅电极上方但不与栅电极连通的凹部。 第一线层形成为覆盖第一接触孔。 在形成第一线层之后，通过干蚀刻蚀刻凹陷部分的底表面，从而形成到达第一和第二绝缘层中的栅电极的第二接触孔。 在第二接触孔上形成第二线层。

公开(公告)号：US08310611B2

公开(公告)日：2012-11-13

申请号：US12536066

申请日：2009-08-05

申请人： Takuo Kaitoh ,  Toshio Miyazawa ,  Takeshi Sakai

发明人： Takuo Kaitoh ,  Toshio Miyazawa ,  Takeshi Sakai

IPC分类号： G02F1/136

CPC分类号： G02F1/1368 ,  H01L27/124 ,  H01L29/458 ,  H01L29/78618

摘要： Provided is a display device including: a gate electrode (GT); a semiconductor film (S) which controls a current flowing between a source electrode (ST) and a drain electrode (DT), the semiconductor film including a channel region and two impurity regions formed of regions which sandwich the channel region; two Ohmic contact layers (DS) being interposed between the source electrode and the like and the two impurity regions; and an insulating film laminated on a partial region of the semiconductor film, the partial region being around a position corresponding to a substantial center of the semiconductor film, in which: the semiconductor film is formed of one of microcrystalline-silicon and polycrystalline-silicon; the two impurity regions are formed in regions on which the insulating film is absent; the two Ohmic contact layers cover the two impurity regions therewith; and the source electrode and the like cover the Ohmic contact layers therewith.

摘要翻译： 提供一种显示装置，包括：栅电极（GT）; 控制在源电极（ST）和漏电极（DT）之间流动的电流的半导体膜（S），所述半导体膜包括沟道区域和由夹着沟道区域的区域形成的两个杂质区域; 两个欧姆接触层（DS）插在源电极等和两个杂质区之间; 以及层叠在所述半导体膜的部分区域上的绝缘膜，所述部分区域围绕与所述半导体膜的大致中心对应的位置，其中：所述半导体膜由微晶硅和多晶硅中的一个形成; 在绝缘膜不存在的区域中形成两个杂质区域; 两个欧姆接触层覆盖其两个杂质区域; 源电极等覆盖欧姆接触层。

公开(公告)号：US08049255B2

公开(公告)日：2011-11-01

申请号：US12155504

申请日：2008-06-05

申请人： Takeshi Sakai ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Hidekazu Miyake

发明人： Takeshi Sakai ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Hidekazu Miyake

IPC分类号： H01L31/062

CPC分类号： H01L27/1214 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78678

摘要： A semiconductor device includes an insulating substrate and a TFT element disposed on the substrate. The TFT element includes a gate electrode, a gate insulating film, a semiconductor layer, and a source electrode and a drain electrode arranged in that order on the insulating substrate. The semiconductor layer includes an active layer composed of polycrystalline semiconductor and a contact layer segment interposed between the active layer and the source electrode and another contact layer segment interposed between the active layer and the drain electrode. The source and drain electrodes each have a first face facing the opposite face of the active layer from the interface with the gate insulating layer and a second face facing an etched side face of the active layer. Each contact layer segment is disposed between the active layer and each of the first and second faces of the source or drain electrode.

摘要翻译： 半导体器件包括绝缘基板和设置在基板上的TFT元件。 TFT元件包括在绝缘基板上依次排列的栅电极，栅极绝缘膜，半导体层以及源电极和漏电极。 半导体层包括由多晶半导体构成的有源层和介于有源层与源电极之间的接触层段，以及介于有源层和漏电极之间的另一接触层段。 源极和漏极各自具有面对与有源层的界面相对的有源层的相对面的第一面和与有源层的蚀刻侧面对置的第二面。 每个接触层段设置在源极或漏极之间的有源层和第一和第二表面中的每一个之间。

公开(公告)号：US20110221985A1

公开(公告)日：2011-09-15

申请号：US13042490

申请日：2011-03-08

申请人： Terunori SAITOU ,  Hidekazu Miyake ,  Takuo Kaitoh ,  Yoshiharu Owaku

发明人： Terunori SAITOU ,  Hidekazu Miyake ,  Takuo Kaitoh ,  Yoshiharu Owaku

IPC分类号： G02F1/133 ,  H01J9/20

CPC分类号： G02F1/13458 ,  G02F1/1333 ,  G02F1/136204 ,  G02F2001/133388 ,  G02F2202/103 ,  G02F2202/22

摘要： In order to prevent dielectric breakdown of TFT or an interlayer insulating film by static electricity with a reduced area at low cost, a liquid crystal display device has a configuration in which an interlayer insulating film and an a-Si film are formed in a display area and a control area inside terminals. Image signal lines and scan lines are insulated from each other through the interlayer insulating film and a-Si film in their intersections. On the other hand, only the interlayer insulating film is formed between static electricity protection lines and an earth line outside the terminals. When static electricity is induced, dielectric breakdown is caused to occur in the area outside the terminals. Thus, the display area and the control area are protected from the static electricity.

摘要翻译： 为了以低成本减小面积的静电来防止TFT或层间绝缘膜的电介质击穿，液晶显示装置具有在显示区域中形成层间绝缘膜和a-Si膜的构造 和端子内部的控制区域。 图像信号线和扫描线通过其交叉点中的层间绝缘膜和a-Si膜彼此绝缘。 另一方面，在静电保护线与端子外的接地线之间仅形成层间绝缘膜。 当感应到静电时，导致端子外部的区域发生介电击穿。 因此，显示区域和控制区域被保护免受静电。

公开(公告)号：US07994505B2

公开(公告)日：2011-08-09

申请号：US12534904

申请日：2009-08-04

申请人： Terunori Saitou ,  Yoshiharu Owaku ,  Takuo Kaitoh ,  Hidekazu Miyake

发明人： Terunori Saitou ,  Yoshiharu Owaku ,  Takuo Kaitoh ,  Hidekazu Miyake

IPC分类号： H01L33/00

CPC分类号： H01L29/78696 ,  H01L27/1229 ,  H01L27/1251 ,  H01L29/04

摘要： A liquid crystal display device includes a semiconductor layer which is formed of a poly-Si layer and an a-Si layer and formed above a gate electrode with a gate insulating film interposed therebetween. A source electrode or a drain electrode is formed above the semiconductor layer. An n+Si layer is formed between the source electrode or the drain electrode and the semiconductor layer. Since ends of the source electrode or the drain electrode are formed inside ends of the semiconductor layer, leak current at the ends of the semiconductor layer can be reduced.

摘要翻译： 液晶显示装置包括由多晶硅层和a-Si层形成的半导体层，并形成在栅电极之上，栅极绝缘膜插入其间。 源电极或漏电极形成在半导体层的上方。 在源极或漏电极与半导体层之间形成n + Si层。 由于源电极或漏电极的端部形成在半导体层的内侧端部，所以能够减小半导体层的端部处的漏电流。

公开(公告)号：US20100201608A1

公开(公告)日：2010-08-12

申请号：US12700815

申请日：2010-02-05

申请人： Takeshi SAKAI ,  Takuo Kaitoh

发明人： Takeshi SAKAI ,  Takuo Kaitoh

IPC分类号： G09G3/20 ,  H01J9/20

CPC分类号： G02F1/136204 ,  H01L27/0248 ,  H01L27/124

摘要： A technique that can prevent breakdown of a thin film transistor due to static electricity is provided. A manufacturing method of a display device includes, in forming a plurality of thin film transistors constituting a drive circuit outside a display region as an assembly of pixels, forming a first wiring that is connected to gate electrodes of the thin film transistors to cause the thin film transistors to perform generating operation of a drive signal and a second wiring that connects gate electrodes of the thin film transistors adjacent to one another in the forming region of the drive unit in the same layer as the first wiring, and cutting the second wiring after forming the connected thin film transistors.

摘要翻译： 提供了可以防止由于静电引起的薄膜晶体管的击穿的技术。 一种显示装置的制造方法，在形成构成作为像素的组合的显示区域外的驱动电路的多个薄膜晶体管时，形成与薄膜晶体管的栅电极连接的第一布线， 薄膜晶体管，用于执行驱动信号的产生操作;以及第二布线，其将所述薄膜晶体管的栅极彼此相邻地连接在与所述第一布线相同的层中的所述驱动单元的形成区域中，并且在所述第一布线之后切割所述第二布线 形成连接的薄膜晶体管。

公开(公告)号：US20090261329A1

公开(公告)日：2009-10-22

申请号：US12423865

申请日：2009-04-15

申请人： Ichiro YAMAKAWA ,  Kazuhiko Horikoshi ,  Yoshiki Yonamoto ,  Naotoshi Akamatsu ,  Toshihiko Itoga ,  Takuo Kaitoh ,  Takahiro Kamo ,  Gi-il Kim ,  Takeshi Sakai ,  Noboru Ooki

发明人： Ichiro YAMAKAWA ,  Kazuhiko Horikoshi ,  Yoshiki Yonamoto ,  Naotoshi Akamatsu ,  Toshihiko Itoga ,  Takuo Kaitoh ,  Takahiro Kamo ,  Gi-il Kim ,  Takeshi Sakai ,  Noboru Ooki

IPC分类号： H01L33/00 ,  H01L29/786

CPC分类号： H01L29/78609 ,  H01L29/66765 ,  H01L29/78669 ,  H01L31/02161

摘要： Provided is a display device using a TFT serving as a switching element, in which image deterioration of the display device is prevented by suppressing a photo leakage current to be small, and in particular, in which a density of defects which become positive fixed charges by light present in a protective insulating film of the TFT is defined to suppress the photo leakage current. In the display device using the TFT, the TFT includes an insulating film, an amorphous silicon film, a drain electrode and a source electrode, and a protective insulating film laminated on a gate electrode covering a part of a surface of an insulating substrate in the stated order, in which the protective insulating film includes a defect which becomes a positive fixed charge under light irradiation. A surface density of the defects is preferably 2.5×1010 cm−2 or more to 4.0×1010 cm−2 or less.

摘要翻译： 提供一种使用TFT作为开关元件的显示装置，其中通过抑制光泄漏电流小而防止显示装置的图像劣化，特别是其中通过以下方式成为正固定电荷的缺陷的密度 定义存在于TFT的保护绝缘膜中的光以抑制光漏电流。 在使用TFT的显示装置中，TFT包括绝缘膜，非晶硅膜，漏电极和源电极，以及层叠在覆盖绝缘基板表面的一部分的栅电极上的保护绝缘膜 其中保护绝缘膜包括在光照射下变成正固定电荷的缺陷。 缺陷的表面密度优选为2.5×10 10 cm -2以上至4.0×10 10 cm -2以下。

公开(公告)号：US20090218575A1

公开(公告)日：2009-09-03

申请号：US12379662

申请日：2009-02-26

申请人： Hidekazu Miyake ,  Eiji Oue ,  Takuo Kaitoh ,  Toshio Miyazawa

发明人： Hidekazu Miyake ,  Eiji Oue ,  Takuo Kaitoh ,  Toshio Miyazawa

IPC分类号： H01L33/00 ,  H01L21/336

CPC分类号： H01L27/12 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1288 ,  H01L29/458 ,  H01L29/66765

摘要： Provided is a display device including a p-type thin film transistor formed on a substrate, in which the p-type thin film transistor includes: a gate electrode; a drain electrode; a source electrode; an insulating film; a semiconductor layer formed on a top surface of the gate electrode through the insulating film; and diffusion layers of p-type impurities formed at each of an interface between the drain electrode and the semiconductor layer and an interface between the source electrode and the semiconductor layer, the drain electrode and the source electrode being formed so as to be opposed to each other with a clearance formed therebetween on a top surface of the semiconductor layer.

摘要翻译： 提供了一种显示装置，其包括形成在基板上的p型薄膜晶体管，其中p型薄膜晶体管包括：栅电极; 漏电极; 源电极; 绝缘膜; 通过绝缘膜形成在栅电极的顶表面上的半导体层; 以及在漏电极和半导体层之间的界面处形成的p型杂质的扩散层以及源电极和半导体层之间的界面，漏电极和源电极形成为与每个 另一个在半导体层的顶表面之间形成有间隙。