公开(公告)号：US20050257747A1

公开(公告)日：2005-11-24

申请号：US11192047

申请日：2005-07-29

申请人： Satoshi Wakabayashi ,  Shinya Okabe ,  Seishi Murakami ,  Masato Morishima ,  Kunihiro Tada

发明人： Satoshi Wakabayashi ,  Shinya Okabe ,  Seishi Murakami ,  Masato Morishima ,  Kunihiro Tada

IPC分类号： C23C16/44 ,  C23C16/458 ,  C23C16/46 ,  H01L21/00 ,  H01L21/285 ,  C23C16/00

CPC分类号： H01L21/67109 ,  C23C16/4581 ,  C23C16/46 ,  H01L21/28556

摘要： A worktable device is disposed inside a film formation process container for a semiconductor process. The worktable device includes a worktable including a top surface to place a target substrate thereon, and a side surface extending downward from the top surface, and a heater disposed in the worktable and configured to heat the substrate through the top surface. A CVD pre-coat layer covers the top surface and the side surface of the worktable. The pre-coat layer has a thickness not less than a thickness which substantially saturates the amount of radiant heat originating from heating of the heater and radiated from the top surface and the side surface of the worktable.

摘要翻译： 工作台装置设置在用于半导体工艺的成膜处理容器内部。 工作台装置包括工作台，其包括顶表面以将目标基板放置在其上，以及从顶表面向下延伸的侧表面，以及设置在工作台中并构造成通过顶表面加热基板的加热器。 CVD预涂层覆盖工作台的顶表面和侧表面。 预涂层的厚度不小于基本上饱和来自加热器的加热并从工作台的顶表面和侧表面辐射的辐射热量的厚度。

公开(公告)号：US6051281A

公开(公告)日：2000-04-18

申请号：US941272

申请日：1997-09-30

申请人： Yasuo Kobayashi ,  Kunihiro Tada ,  Hideki Yoshikawa

发明人： Yasuo Kobayashi ,  Kunihiro Tada ,  Hideki Yoshikawa

IPC分类号： C23C16/34 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L23/522

CPC分类号： H01L21/76856 ,  C23C16/34 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76879

摘要： A method of forming a titanium film and a titanium nitride film on a substrate by lamination which method is capable of suppressing contamination of the substrate due to the by-product and of reducing a contact resistance value of the titanium film. By carrying out the step of forming a titanium film on a surface of a substrate, the step of subjecting the substrate to the plasma processing in an atmosphere of the mixed gas of nitrogen gas and hydrogen gas, thereby nitriding a surface layer of the titanium film to form thereon a nitride layer, and the step of forming a barrier film (e.g., a titanium nitride film) on the titanium film having the nitride layer formed thereon, both the titanium film and the titanium nitride film are formed on the substrate by lamination.

摘要翻译： 通过层叠在基板上形成钛膜和氮化钛膜的方法，该方法能够抑制由于副产物引起的基板的污染并降低钛膜的接触电阻值。 通过在基板的表面上进行钛膜的形成工序，在氮气和氢气的混合气体的气氛中对基板进行等离子体处理，从而氮化钛膜的表面层 在其上形成氮化物层，并且在其上形成有氮化物层的钛膜上形成阻挡膜（例如，氮化钛膜）的步骤，通过层压在基板上形成钛膜和氮化钛膜 。