公开(公告)号：US20080173963A1

公开(公告)日：2008-07-24

申请号：US11626757

申请日：2007-01-24

申请人： Tzu-Hsuan Hsu ,  Shou-Gwo Wuu ,  Dun-Nian Yaung

发明人： Tzu-Hsuan Hsu ,  Shou-Gwo Wuu ,  Dun-Nian Yaung

IPC分类号： H01L27/14

CPC分类号： H01L27/1463 ,  H01L27/1464 ,  H01L27/14683

摘要： The present disclosure provides a backside illuminated semiconductor device. The device includes a substrate having a front surface and a back surface; a plurality of sensor elements formed in the substrate, each of the plurality of sensor elements is designed and configured to receive light directed towards the back surface; and a sensor isolation feature formed in the substrate, and disposed horizontally between two adjacent elements of the plurality of sensor elements, and vertically between the back surface and the front surface.

摘要翻译： 本公开提供了背面照明半导体器件。 该装置包括具有前表面和后表面的基板; 形成在所述基板中的多个传感器元件，所述多个传感器元件中的每一个被设计和配置成接收朝向所述后表面的光; 以及形成在所述基板中的传感器隔离特征，并且水平地设置在所述多个传感器元件的两个相邻元件之间，并且在所述后表面和所述前表面之间垂直。

公开(公告)号：US07348651B2

公开(公告)日：2008-03-25

申请号：US11007935

申请日：2004-12-09

申请人： Dun-Nian Yaung

发明人： Dun-Nian Yaung

IPC分类号： H01L31/103

CPC分类号： H01L27/14643 ,  H01L27/1463

摘要： A method and system is disclosed for reducing or eliminating leakage between a pinned photodiode and shallow trench isolation structure fabricated therewith while optimizing the sensitivity of the photodiode. Provided is a system with an N+ region implanted in a P-type substrate; a P-type well separating the N+ region from the shallow trench isolation (STI) structure; and at least a P+ region over the N+ region, and overlapping at least part of the P-type well and a substrate portion between the N+ region and P-type well. The space between the N+ region and a damaged region adjacent the STI is greater than the distance that the depletion region between the N+ region and the P-type well, expands. The junctions of the various features are optimized to maximize a photosensitive response for the wavelength of the absorbed light as well as reducing or eliminating electrical leakage.

摘要翻译： 公开了一种用于减少或消除在其上制造的钉扎光电二极管和浅沟槽隔离结构之间的泄漏的方法和系统，同时优化光电二极管的灵敏度。 提供了在P型衬底中注入N +区域的系统; 将N +区域与浅沟槽隔离（STI）结构分离的P型阱; 并且至少在N +区域上的P +区域，并且与P型阱的至少一部分和N +区域和P型阱之间的衬底部分重叠。 N +区域和与STI相邻的损伤区域之间的空间大于N +区域和P型阱之间的耗尽区域的扩展。 各种特征的结点被优化以最大化吸收光的波长的光敏响应以及减少或消除漏电。

公开(公告)号：US07326588B2

公开(公告)日：2008-02-05

申请号：US11229655

申请日：2005-09-20

申请人： Dun-Nian Yaung ,  Chung-Yi Yu

发明人： Dun-Nian Yaung ,  Chung-Yi Yu

IPC分类号： H01L21/00

CPC分类号： H01L27/14685 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625

摘要： An image sensor device and fabrication method thereof. An image sensing array is formed in a substrate, wherein the image sensing array comprises a plurality of photosensors with spaces therebetween. A first dielectric layer with a first refractive index is formed overlying the spaces but not the photosensors. A conformal second dielectric layer with a second refractive index is formed on a sidewall of the first dielectric layer. A third dielectric layer with a third refractive index is formed overlying the photosensors but not the spaces. The third refractive index is greater than the second refractive index. A light guide constructed by the second and third dielectric layers is formed overlying each photosensor, thereby preventing incident light from striking other photosensors.

摘要翻译： 一种图像传感器装置及其制造方法。 图像感测阵列形成在基板中，其中图像感测阵列包括在其间具有间隔的多个光电传感器。 具有第一折射率的第一介电层形成在空间上而不是光电传感器上。 在第一介电层的侧壁上形成具有第二折射率的共形的第二介电层。 形成具有第三折射率的第三介电层，覆盖光电传感器而不是空间。 第三折射率大于第二折射率。 由第二和第三电介质层构成的导光体形成在每个光电传感器上，从而防止入射光撞击其他感光体。

公开(公告)号：US20070125935A1

公开(公告)日：2007-06-07

申请号：US11292626

申请日：2005-12-02

申请人： Dun-Nian Yaung

发明人： Dun-Nian Yaung

IPC分类号： H01L27/00

CPC分类号： H01L27/14643 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14685 ,  H01L27/14689

摘要： An image sensing device. An active layer is disposed overlying a substrate, wherein the active layer has different conductivity with the substrate. A plurality of photodiodes is disposed in the active layer. An isolating region is interposed between two adjacent photodiodes, wherein the isolating region contacts the substrate.

摘要翻译： 图像感测装置。 有源层设置在衬底上，其中有源层与衬底具有不同的导电性。 多个光电二极管设置在有源层中。 隔离区介于两个相邻的光电二极管之间，其中隔离区接触衬底。

公开(公告)号：US20070120160A1

公开(公告)日：2007-05-31

申请号：US11627883

申请日：2007-01-26

申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

IPC分类号： H01L31/113

CPC分类号： H01L27/14689 ,  H01L27/1463

摘要： Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a substrate. A first layer having a second refraction index that is different from the first refraction index is formed over the isolation structure. The first layer is removed from at least a portion of the isolation structure. A second layer having a third refraction index is formed over the isolation structure after the first layer is removed. The third refraction index is substantially similar to the first refraction index.

摘要翻译： 提供半导体器件及其制造方法。 在一个示例中，该方法包括在嵌入基板中的传感器上形成具有第一折射率的隔离结构。 在隔离结构上形成具有与第一折射率不同的第二折射率的第一层。 从隔离结构的至少一部分去除第一层。 在去除第一层之后，在隔离结构上形成具有第三折射率的第二层。 第三折射率基本上类似于第一折射率。

公开(公告)号：US20060276014A1

公开(公告)日：2006-12-07

申请号：US11146033

申请日：2005-06-07

申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung

发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung

IPC分类号： H01L21/425 ,  H01L21/22

CPC分类号： H01L27/14689 ,  H01L27/14601 ,  H01L27/14643 ,  H01L29/66659 ,  H01L29/7834

摘要： A self-aligned high-energy implantation process of forming a deep junction structure. For exposing a predetermined region of a semiconductor substrate, a masking structure has a gate layer, a hard mask layer patterned on the gate layer, and a photoresist layer covering parts of said semiconductor substrate, said gate layer and said hard mask layer. The hard mask layer has a thickness greater than 350 Angstroms. Using the masking structure and performing an ion implantation process requiring an energy greater than 70 keV, a doped region of a second conductive type is formed in the predetermined region of the semiconductor substrate of a first conductive type.

摘要翻译： 形成深结结构的自对准高能注入工艺。 为了暴露半导体衬底的预定区域，掩模结构具有栅极层，在栅极层上图案化的硬掩模层以及覆盖所述半导体衬底，所述栅极层和所述硬掩模层的部分的光致抗蚀剂层。 硬掩模层的厚度大于350埃。 使用掩模结构并执行需要大于70keV的能量的离子注入工艺，在第一导电类型的半导体衬底的预定区域中形成第二导电类型的掺杂区域。

公开(公告)号：US20060148119A1

公开(公告)日：2006-07-06

申请号：US11360750

申请日：2006-02-23

申请人： Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

发明人： Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

IPC分类号： H01L21/00

CPC分类号： H01L31/103 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14643 ,  H01L31/02161

摘要： The present invention is CMOS image sensor and its method of fabrication. This invention provides an efficient structure to improve the quantum efficiency of a CMOS type photodiode with borderless contact. The image sensor comprises a N-well/P-substrate type photodiode with borderless contact and dielectric structure covering the photodiode region. The dielectric structure is located between the photodiode and the interlevel dielectric (ILD) and is used as a buffer layer for the borderless contact. The method of fabricating a high performance photodiode comprises forming a photodiode in the n-well region of a shallow trench, and embedding a dielectric material between the ILD oxide and the photodiode having a refraction index higher than the ILD oxide.

摘要翻译： 本发明是CMOS图像传感器及其制造方法。 本发明提供了一种提高具有无边界接触的CMOS型光电二极管的量子效率的有效结构。 图像传感器包括覆盖光电二极管区域的无接触接触和介电结构的N阱/ P基板型光电二极管。 电介质结构位于光电二极管和层间电介质（ILD）之间，用作无边界接触的缓冲层。 制造高性能光电二极管的方法包括在浅沟槽的n阱区域中形成光电二极管，并且在ILD氧化物和具有高于ILD氧化物的折射率的光电二极管之间嵌入电介质材料。

公开(公告)号：US20060081898A1

公开(公告)日：2006-04-20

申请号：US10966641

申请日：2004-10-15

申请人： Wen-De Wang ,  Dun-Nian Yaung ,  Tzu-Hsuan Hsu

发明人： Wen-De Wang ,  Dun-Nian Yaung ,  Tzu-Hsuan Hsu

IPC分类号： H01L31/113

CPC分类号： H01L27/14621 ,  H01L27/14623

摘要： A semiconductor device including a substrate having a plurality of image sensing elements formed therein, a plurality of spaced apart color filters overlying the substrate and a light blocking material interposed between adjacent spaced apart color filters.

摘要翻译： 一种半导体器件，包括其上形成有多个图像感测元件的衬底，覆盖在衬底上的多个间隔开的滤色器以及插入在相邻间隔开的滤色器之间的遮光材料。

公开(公告)号：US20060057765A1

公开(公告)日：2006-03-16

申请号：US10939894

申请日：2004-09-13

申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Yean-Kuen Fang

发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Yean-Kuen Fang

IPC分类号： H01L21/00

CPC分类号： H01L27/14685 ,  H01L27/14621 ,  H01L27/14625

摘要： A device includes an image sensing element. The device also includes a Silicon Dioxide (SiO2) layer, located over the image sensing element, exhibiting a first index of refraction. The device further includes a first lens, located over the SiO2 layer, exhibiting a second index of refraction greater than the first index of refraction. The device still further includes a color filter located over the first lens and a second lens located over the color filter.

摘要翻译： 一种装置包括图像感测元件。 该装置还包括位于图像感测元件上方的呈现第一折射率的二氧化硅（SiO 2）层。 该器件还包括位于SiO 2层之上的第一透镜，其具有大于第一折射率的第二折射率。 该装置还包括位于第一透镜上方的滤色器和位于滤色器上方的第二透镜。

公开(公告)号：US07012240B2

公开(公告)日：2006-03-14

申请号：US10729406

申请日：2003-12-05

申请人： Dun-Nian Yaung

发明人： Dun-Nian Yaung

IPC分类号： H01J40/14 ,  H01L21/441

CPC分类号： H01L27/14625 ,  H01L27/14623 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687

摘要： An image sensor with air gaps as optical guard rings is provided. The air gaps are formed in a stacked insulating layer between the sensor areas, that is, around each pixel. A light transmitting insulating layer is formed on the stacked insulating layer without filling the air gaps.

摘要翻译： 提供具有气隙作为光学保护环的图像传感器。 气隙形成在传感器区域之间的堆叠绝缘层中，即围绕每个像素。 在堆叠的绝缘层上形成透光绝缘层，而不填充气隙。