公开(公告)号：US20080173963A1

公开(公告)日：2008-07-24

申请号：US11626757

申请日：2007-01-24

申请人： Tzu-Hsuan Hsu ,  Shou-Gwo Wuu ,  Dun-Nian Yaung

发明人： Tzu-Hsuan Hsu ,  Shou-Gwo Wuu ,  Dun-Nian Yaung

IPC分类号： H01L27/14

CPC分类号： H01L27/1463 ,  H01L27/1464 ,  H01L27/14683

摘要： The present disclosure provides a backside illuminated semiconductor device. The device includes a substrate having a front surface and a back surface; a plurality of sensor elements formed in the substrate, each of the plurality of sensor elements is designed and configured to receive light directed towards the back surface; and a sensor isolation feature formed in the substrate, and disposed horizontally between two adjacent elements of the plurality of sensor elements, and vertically between the back surface and the front surface.

摘要翻译： 本公开提供了背面照明半导体器件。 该装置包括具有前表面和后表面的基板; 形成在所述基板中的多个传感器元件，所述多个传感器元件中的每一个被设计和配置成接收朝向所述后表面的光; 以及形成在所述基板中的传感器隔离特征，并且水平地设置在所述多个传感器元件的两个相邻元件之间，并且在所述后表面和所述前表面之间垂直。

公开(公告)号：US20070120160A1

公开(公告)日：2007-05-31

申请号：US11627883

申请日：2007-01-26

申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

IPC分类号： H01L31/113

CPC分类号： H01L27/14689 ,  H01L27/1463

摘要： Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a substrate. A first layer having a second refraction index that is different from the first refraction index is formed over the isolation structure. The first layer is removed from at least a portion of the isolation structure. A second layer having a third refraction index is formed over the isolation structure after the first layer is removed. The third refraction index is substantially similar to the first refraction index.

摘要翻译： 提供半导体器件及其制造方法。 在一个示例中，该方法包括在嵌入基板中的传感器上形成具有第一折射率的隔离结构。 在隔离结构上形成具有与第一折射率不同的第二折射率的第一层。 从隔离结构的至少一部分去除第一层。 在去除第一层之后，在隔离结构上形成具有第三折射率的第二层。 第三折射率基本上类似于第一折射率。

公开(公告)号：US08124495B2

公开(公告)日：2012-02-28

申请号：US11627883

申请日：2007-01-26

申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

IPC分类号： H01L21/76

CPC分类号： H01L27/14689 ,  H01L27/1463

摘要： Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a substrate. A first layer having a second refraction index that is different from the first refraction index is formed over the isolation structure. The first layer is removed from at least a portion of the isolation structure. A second layer having a third refraction index is formed over the isolation structure after the first layer is removed. The third refraction index is substantially similar to the first refraction index.

摘要翻译： 提供半导体器件及其制造方法。 在一个示例中，该方法包括在嵌入基板中的传感器上形成具有第一折射率的隔离结构。 在隔离结构上形成具有与第一折射率不同的第二折射率的第一层。 从隔离结构的至少一部分去除第一层。 在去除第一层之后，在隔离结构上形成具有第三折射率的第二层。 第三折射率基本上类似于第一折射率。

公开(公告)号：US07253458B2

公开(公告)日：2007-08-07

申请号：US10980959

申请日：2004-11-04

申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Wen-De Wang ,  Ho-Ching Chien ,  Shou-Gwo Wuu

发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Wen-De Wang ,  Ho-Ching Chien ,  Shou-Gwo Wuu

IPC分类号： H01L27/148

CPC分类号： H01L27/14643 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636

摘要： A complementary metal oxide semiconductor field effect transistor (CMOS-FET) image sensor. An active photosensing pixel is formed on a substrate. At least one side of the pixel has a width equal to or less than approximately 3 μm. At least one dielectric layer is disposed on the substrate covering the pixel. A color filter is disposed on the least one dielectric layer. A microlens array is disposed on the color filter of the pixel, and the sum of the thickness of all dielectric layers and the color filter divided by the pixel width is equal to or less than approximately 1.87.

摘要翻译： 互补金属氧化物半导体场效应晶体管（CMOS-FET）图像传感器。 在基板上形成有源感光像素。 像素的至少一侧具有等于或小于约3μm的宽度。 在覆盖像素的基板上设置至少一个电介质层。 滤色器设置在至少一个电介质层上。 微透镜阵列设置在像素的滤色器上，所有电介质层和滤色器的厚度之和除以像素宽度等于或小于约1.87。

公开(公告)号：US06982443B2

公开(公告)日：2006-01-03

申请号：US10799986

申请日：2004-03-12

申请人： Tzu-Hsuan Hsu ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Dun-Nian Yaung

发明人： Tzu-Hsuan Hsu ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Dun-Nian Yaung

IPC分类号： H01L27/148 ,  H01L29/768

CPC分类号： H01L27/14632 ,  H01L27/1462

摘要： A plurality of apertures is formed in at least one first insulating layer disposed over a sensor formed in a semiconductor substrate. A second insulating layer is disposed over the at least one first insulating layer and the plurality of apertures in the at least one first insulating layer. The apertures form hollow regions in the at least one first insulating layer over the sensor, allowing more light or energy to pass through the at least one first insulating layer to the sensor, and increasing the sensitivity of the sensor.

公开(公告)号：US07338830B2

公开(公告)日：2008-03-04

申请号：US11271116

申请日：2005-11-10

申请人： Tzu-Hsuan Hsu ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Dun-Nian Yaung

发明人： Tzu-Hsuan Hsu ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Dun-Nian Yaung

IPC分类号： H01L21/00

CPC分类号： H01L27/14632 ,  H01L27/1462

摘要： A plurality of apertures is formed in at least one first insulating layer disposed over a sensor formed in a semiconductor substrate. A second insulating layer is disposed over the at least one first insulating layer and the plurality of apertures in the at least one first insulating layer. The apertures form hollow regions in the at least one first insulating layer over the sensor, allowing more light or energy to pass through the at least one first insulating layer to the sensor, and increasing the sensitivity of the sensor.

摘要翻译： 在设置在形成于半导体衬底中的传感器上的至少一个第一绝缘层中形成多个孔。 第二绝缘层设置在至少一个第一绝缘层和至少一个第一绝缘层中的多个孔之上。 所述孔在所述传感器上的所述至少一个第一绝缘层中形成中空区域，允许更多的光或能量穿过所述至少一个第一绝缘层到所述传感器，并且增加所述传感器的灵敏度。

公开(公告)号：US07232697B2

公开(公告)日：2007-06-19

申请号：US10818312

申请日：2004-04-05

申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

IPC分类号： H01L21/339

CPC分类号： H01L27/14689 ,  H01L27/1463

摘要： Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a substrate. A first layer having a second refraction index that is different from the first refraction index is formed over the isolation structure. The first layer is removed from at least a portion of the isolation structure. A second layer having a third refraction index is formed over the isolation structure after the first layer is removed. The third refraction index is substantially similar to the first refraction index.

摘要翻译： 提供半导体器件及其制造方法。 在一个示例中，该方法包括在嵌入基板中的传感器上形成具有第一折射率的隔离结构。 在隔离结构上形成具有与第一折射率不同的第二折射率的第一层。 从隔离结构的至少一部分去除第一层。 在去除第一层之后，在隔离结构上形成具有第三折射率的第二层。 第三折射率基本上类似于第一折射率。

公开(公告)号：US20050199921A1

公开(公告)日：2005-09-15

申请号：US10799986

申请日：2004-03-12

申请人： Tzu-Hsuan Hsu ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Dun-Nian Yaung

发明人： Tzu-Hsuan Hsu ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Dun-Nian Yaung

IPC分类号： H01L21/82 ,  H01L27/146 ,  H01L31/062

CPC分类号： H01L27/14632 ,  H01L27/1462

摘要： A plurality of apertures is formed in at least one first insulating layer disposed over a sensor formed in a semiconductor substrate. A second insulating layer is disposed over the at least one first insulating layer and the plurality of apertures in the at least one first insulating layer. The apertures form hollow regions in the at least one first insulating layer over the sensor, allowing more light or energy to pass through the at least one first insulating layer to the sensor, and increasing the sensitivity of the sensor.

摘要翻译： 在设置在形成于半导体衬底中的传感器上的至少一个第一绝缘层中形成多个孔。 第二绝缘层设置在所述至少一个第一绝缘层和所述至少一个第一绝缘层中的多个孔之上。 所述孔在所述传感器上的所述至少一个第一绝缘层中形成中空区域，允许更多的光或能量穿过所述至少一个第一绝缘层到所述传感器，并且增加所述传感器的灵敏度。

公开(公告)号：US20060054939A1

公开(公告)日：2006-03-16

申请号：US10980959

申请日：2004-11-04

申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Wen-De Wang ,  Ho-Ching Chien ,  Shou-Gwo Wuu

发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Wen-De Wang ,  Ho-Ching Chien ,  Shou-Gwo Wuu

IPC分类号： H01L27/148

CPC分类号： H01L27/14643 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636

摘要： A complementary metal oxide semiconductor field effect transistor (CMOS-FET) image sensor. An active photosensing pixel is formed on a substrate. At least one side of the pixel has a width equal to or less than approximately 3 μm. At least one dielectric layer is disposed on the substrate covering the pixel. A color filter is disposed on the least one dielectric layer. A microlens array is disposed on the color filter of the pixel, and the sum of the thickness of all dielectric layers and the color filter divided by the pixel width is equal to or less than approximately 1.87.

摘要翻译： 互补金属氧化物半导体场效应晶体管（CMOS-FET）图像传感器。 在基板上形成有源感光像素。 像素的至少一侧具有等于或小于约3μm的宽度。 在覆盖像素的基板上设置至少一个电介质层。 滤色器设置在至少一个电介质层上。 微透镜阵列设置在像素的滤色器上，所有电介质层和滤色器的厚度之和除以像素宽度等于或小于约1.87。

公开(公告)号：US07485940B2

公开(公告)日：2009-02-03

申请号：US11626757

申请日：2007-01-24

申请人： Tzu-Hsuan Hsu ,  Shou-Gwo Wuu ,  Dun-Nian Yaung

发明人： Tzu-Hsuan Hsu ,  Shou-Gwo Wuu ,  Dun-Nian Yaung

IPC分类号： H01L31/00 ,  H01L23/28

CPC分类号： H01L27/1463 ,  H01L27/1464 ,  H01L27/14683

摘要： The present disclosure provides a backside illuminated semiconductor device. The device includes a substrate having a front surface and a back surface; a plurality of sensor elements formed in the substrate, each of the plurality of sensor elements is designed and configured to receive light directed towards the back surface; and a sensor isolation feature formed in the substrate, and disposed horizontally between two adjacent elements of the plurality of sensor elements, and vertically between the back surface and the front surface.

摘要翻译： 本公开提供了背面照明半导体器件。 该装置包括具有前表面和后表面的基板; 形成在所述基板中的多个传感器元件，所述多个传感器元件中的每一个被设计和配置成接收朝向所述后表面的光; 以及形成在所述基板中的传感器隔离特征，并且水平地设置在所述多个传感器元件的两个相邻元件之间，并且在所述后表面和所述前表面之间垂直。