公开(公告)号：US08304299B2

公开(公告)日：2012-11-06

申请号：US12821668

申请日：2010-06-23

申请人： Sung-Ryul Kim ,  Jean-Ho Song ,  Jae-Hyoung Youn ,  O-Sung Seo ,  Byeong-Beom Kim ,  Je-Hyeong Park ,  Jong-In Kim ,  Jae-Jin Song

发明人： Sung-Ryul Kim ,  Jean-Ho Song ,  Jae-Hyoung Youn ,  O-Sung Seo ,  Byeong-Beom Kim ,  Je-Hyeong Park ,  Jong-In Kim ,  Jae-Jin Song

IPC分类号： H01L21/00

CPC分类号： H01L29/78603 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/458 ,  H01L29/66765

摘要： A thin film transistor array panel according to an exemplary embodiment of the present invention comprises a substrate, a gate line formed on the substrate, a gate insulating layer formed on the gate line, a semiconductor layer formed on the gate insulating layer, and a data line formed on the semiconductor layer, wherein the data line comprises a lower data layer, an upper data layer, a data oxide layer, and a buffer layer, wherein the upper data layer and the buffer layer comprise a same material.

摘要翻译： 根据本发明的示例性实施例的薄膜晶体管阵列面板包括基板，形成在基板上的栅极线，形成在栅极线上的栅极绝缘层，形成在栅极绝缘层上的半导体层，以及数据 其中所述数据线包括下数据层，上数据层，数据氧化层和缓冲层，其中所述上数据层和所述缓冲层包括相同的材料。

公开(公告)号：US20110108839A1

公开(公告)日：2011-05-12

申请号：US12821668

申请日：2010-06-23

申请人： Sung-Ryul Kim ,  Jean-Ho Song ,  Jae-Hyoung Youn ,  O-Sung Seo ,  Byeong-Beom Kim ,  Je-Hyeong Park ,  Jong-In Kim ,  Jae-Jin Song

发明人： Sung-Ryul Kim ,  Jean-Ho Song ,  Jae-Hyoung Youn ,  O-Sung Seo ,  Byeong-Beom Kim ,  Je-Hyeong Park ,  Jong-In Kim ,  Jae-Jin Song

IPC分类号： H01L27/088 ,  H01L21/8234 ,  H01L21/336

CPC分类号： H01L29/78603 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/458 ,  H01L29/66765

摘要： A thin film transistor array panel according to an exemplary embodiment of the present invention comprises a substrate, a gate line formed on the substrate, a gate insulating layer formed on the gate line, a semiconductor layer formed on the gate insulating layer, and a data line formed on the semiconductor layer, wherein the data line comprises a lower data layer, an upper data layer, a data oxide layer, and a buffer layer, wherein the upper data layer and the buffer layer comprise a same material.

摘要翻译： 根据本发明的示例性实施例的薄膜晶体管阵列面板包括基板，形成在基板上的栅极线，形成在栅极线上的栅极绝缘层，形成在栅极绝缘层上的半导体层，以及数据 其中所述数据线包括下数据层，上数据层，数据氧化层和缓冲层，其中所述上数据层和所述缓冲层包括相同的材料。

公开(公告)号：US20090184326A1

公开(公告)日：2009-07-23

申请号：US12332117

申请日：2008-12-10

申请人： Woo-Geun Lee ,  Jae-Hyoung Youn ,  Ki-Won Kim ,  Jong-In Kim

发明人： Woo-Geun Lee ,  Jae-Hyoung Youn ,  Ki-Won Kim ,  Jong-In Kim

IPC分类号： H01L33/00

CPC分类号： H01L27/124 ,  G02F1/136286

摘要： A display substrate includes a base substrate, a gate line, a gate insulation layer, a data line, a thin-film transistor (TFT) and a pixel electrode. The gate line is extended in a first direction on the base substrate. The gate insulation layer is formed on the base substrate to cover the gate line. The data line is extended in a second direction and intersects the gate line at an intersecting portion. At the intersecting portion, the data line is separated from the gate line by an air gap. In another embodiment, the data line also includes at least one etching hole extending to the air gap. The TFT is electrically connected to the data and the gate lines. The pixel electrode is electrically connected to the TFT.

摘要翻译： 显示基板包括基底基板，栅极线，栅极绝缘层，数据线，薄膜晶体管（TFT）和像素电极。 栅极线在基底基板上沿第一方向延伸。 栅极绝缘层形成在基底基板上以覆盖栅极线。 数据线在第二方向上延伸并且在相交部分与栅极线相交。 在交叉部分，数据线通过气隙与栅极线分离。 在另一个实施例中，数据线还包括延伸到气隙的至少一个蚀刻孔。 TFT与数据和栅极线电连接。 像素电极电连接到TFT。

公开(公告)号：US08946025B2

公开(公告)日：2015-02-03

申请号：US12931516

申请日：2011-02-03

申请人： Byeong-Beom Kim ,  Je-Hyeong Park ,  Jae-Hyoung Youn ,  Jean-Ho Song ,  Jong-In Kim

发明人： Byeong-Beom Kim ,  Je-Hyeong Park ,  Jae-Hyoung Youn ,  Jean-Ho Song ,  Jong-In Kim

IPC分类号： H01L21/336 ,  H01L21/00 ,  H01L21/84 ,  H01L29/04 ,  H01L29/10 ,  H01L27/14 ,  H01L31/036 ,  H01L23/48 ,  C23C14/14 ,  C23C14/34 ,  H01L23/52 ,  H01L29/786

CPC分类号： H01L27/124 ,  C23C14/14 ,  C23C14/34 ,  H01L23/4827 ,  H01L23/52 ,  H01L29/786 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming a thin film according to an exemplary embodiment of the present invention includes forming the thin film at a power density in the range of approximately 1.5 to approximately 3 W/cm2 and at a pressure of an inert gas that is in the range of approximately 0.2 to approximately 0.3 Pa. This process results in an amorphous metal thin film barrier layer that prevents undesired diffusion from adjacent layers, even when this barrier layer is thinner than many conventional barrier layers.

摘要翻译： 根据本发明的示例性实施方案的薄膜的形成方法包括以大约1.5至大约3W / cm 2的功率密度和处于该范围内的惰性气体的压力形成薄膜 大约0.2至大约0.3Pa。这个过程产生一个非晶金属薄膜阻挡层，防止相邻层的不期望的扩散，即使该阻挡层比许多传统的阻挡层薄。

公开(公告)号：US20110186843A1

公开(公告)日：2011-08-04

申请号：US12931516

申请日：2011-02-03

申请人： Byeong-Beom Kim ,  Je-Hyeong Park ,  Jae-Hyoung Youn ,  Jean-Ho Song ,  Jong-In Kim

发明人： Byeong-Beom Kim ,  Je-Hyeong Park ,  Jae-Hyoung Youn ,  Jean-Ho Song ,  Jong-In Kim

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L23/52 ,  C23C14/34 ,  C23C14/14

CPC分类号： H01L27/124 ,  C23C14/14 ,  C23C14/34 ,  H01L23/4827 ,  H01L23/52 ,  H01L29/786 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming a thin film according to an exemplary embodiment of the present invention includes forming the thin film at a power density in the range of approximately 1.5 to approximately 3 W/cm2 and at a pressure of an inert gas that is in the range of approximately 0.2 to approximately 0.3 Pa. This process results in an amorphous metal thin film barrier layer that prevents undesired diffusion from adjacent layers, even when this barrier layer is thinner than many conventional barrier layers.

摘要翻译： 根据本发明的示例性实施方式的薄膜形成方法包括以大约1.5至大约3W / cm 2的功率密度形成薄膜，并且在惰性气体的压力范围内 大约0.2至大约0.3Pa。这个过程产生一个非晶金属薄膜阻挡层，防止相邻层的不期望的扩散，即使该阻挡层比许多传统的阻挡层更薄。

公开(公告)号：US08686423B2

公开(公告)日：2014-04-01

申请号：US13604082

申请日：2012-09-05

申请人： Sung-Ryul Kim ,  Jean-Ho Song ,  Jae-Hyoung Youn ,  O-Sung Seo ,  Byeong-Beom Kim ,  Je-Hyeong Park ,  Jong-In Kim ,  Jae-Jin Song

发明人： Sung-Ryul Kim ,  Jean-Ho Song ,  Jae-Hyoung Youn ,  O-Sung Seo ,  Byeong-Beom Kim ,  Je-Hyeong Park ,  Jong-In Kim ,  Jae-Jin Song

IPC分类号： H01L31/00

CPC分类号： H01L29/78603 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/458 ,  H01L29/66765

摘要： A thin film transistor array panel according to an exemplary embodiment of the present invention comprises a substrate, a gate line formed on the substrate, a gate insulating layer formed on the gate line, a semiconductor layer formed on the gate insulating layer, and a data line formed on the semiconductor layer, wherein the data line comprises a lower data layer, an upper data layer, a data oxide layer, and a buffer layer, wherein the upper data layer and the buffer layer comprise a same material.

摘要翻译： 根据本发明的示例性实施例的薄膜晶体管阵列面板包括基板，形成在基板上的栅极线，形成在栅极线上的栅极绝缘层，形成在栅极绝缘层上的半导体层，以及数据 其中所述数据线包括下数据层，上数据层，数据氧化层和缓冲层，其中所述上数据层和所述缓冲层包括相同的材料。

公开(公告)号：US08604469B2

公开(公告)日：2013-12-10

申请号：US12464920

申请日：2009-05-13

申请人： Woo-Geun Lee ,  Jae-Hyoung Youn ,  Ki-Won Kim ,  Young-Wook Lee ,  Jong-In Kim

发明人： Woo-Geun Lee ,  Jae-Hyoung Youn ,  Ki-Won Kim ,  Young-Wook Lee ,  Jong-In Kim

IPC分类号： H01L29/10

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/78696

摘要： A thin film transistor array panel includes a substrate, a gate line formed on the substrate and including a gate electrode, a gate insulating layer formed on the gate line, a semiconductor formed on the gate insulating layer and including a channel of a thin film transistor, a data line formed on the semiconductor and including a source electrode and a drain electrode formed on the semiconductor and opposite to the source electrode with respect to the channel of the thin film transistor, wherein the channel of the thin film transistor covers both side surfaces of the gate electrode.

摘要翻译： 薄膜晶体管阵列面板包括基板，形成在基板上的栅极线，包括栅极电极，形成在栅极线上的栅极绝缘层，形成在栅极绝缘层上并包括薄膜晶体管的沟道的半导体 ，形成在半导体上的数据线，包括相对于薄膜晶体管的沟道形成在半导体上并与源电极相对的源电极和漏电极，其中薄膜晶体管的沟道覆盖两个侧表面 的栅电极。

公开(公告)号：US07928440B2

公开(公告)日：2011-04-19

申请号：US12332117

申请日：2008-12-10

申请人： Woo-Geun Lee ,  Jae-Hyoung Youn ,  Ki-Won Kim ,  Jong-In Kim

发明人： Woo-Geun Lee ,  Jae-Hyoung Youn ,  Ki-Won Kim ,  Jong-In Kim

IPC分类号： H01L29/04 ,  H01L29/15 ,  H01L27/12

CPC分类号： H01L27/124 ,  G02F1/136286

摘要： A display substrate includes a base substrate, a gate line, a gate insulation layer, a data line, a thin-film transistor (TFT) and a pixel electrode. The gate line is extended in a first direction on the base substrate. The gate insulation layer is formed on the base substrate to cover the gate line. The data line is extended in a second direction and intersects the gate line at an intersecting portion. At the intersecting portion, the data line is separated from the gate line by an air gap. In another embodiment, the data line also includes at least one etching hole extending to the air gap. The TFT is electrically connected to the data and the gate lines. The pixel electrode is electrically connected to the TFT.

摘要翻译： 显示基板包括基底基板，栅极线，栅极绝缘层，数据线，薄膜晶体管（TFT）和像素电极。 栅极线在基底基板上沿第一方向延伸。 栅极绝缘层形成在基底基板上以覆盖栅极线。 数据线在第二方向上延伸并且在相交部分与栅极线相交。 在交叉部分，数据线通过气隙与栅极线分离。 在另一个实施例中，数据线还包括延伸到气隙的至少一个蚀刻孔。 TFT与数据和栅极线电连接。 像素电极电连接到TFT。