公开(公告)号：US08213265B2

公开(公告)日：2012-07-03

申请号：US12918607

申请日：2008-04-04

申请人： Yun Young Nam ,  Jin Seok Lee ,  Sang Jin Hong ,  We Duck Cho

发明人： Yun Young Nam ,  Jin Seok Lee ,  Sang Jin Hong ,  We Duck Cho

IPC分类号： G01S3/80

CPC分类号： G01S3/8006

摘要： There is provided a method of tracking an object in a three-dimensional (3-D) space by using particle filter-based acoustic sensors, the method comprising selecting two planes in the 3-D space; executing two-dimensional (2-D) particle filtering on the two selected planes, respectively; and associating results of the 2-D particle filtering on the respective planes.

摘要翻译： 提供了一种通过使用基于粒子滤波器的声学传感器来跟踪三维（3-D）空间中的对象的方法，该方法包括在3-D空间中选择两个平面; 分别在两个选定的平面上执行二维（2-D）粒子滤波; 并且将各个平面上的二维粒子滤波的结果相关联。

公开(公告)号：US20110182395A1

公开(公告)日：2011-07-28

申请号：US12748369

申请日：2010-03-26

申请人： JOON KYOO PARK ,  Jin Seok Lee ,  Kyeong Lak Jeon ,  Jung Min Suh ,  Gi-Jun Gwon ,  Nam Gyu Park ,  Kyong Bo Eom ,  Jin Sun Kim ,  Dong Geun Ha ,  Kyoung Joo Kim

发明人： JOON KYOO PARK ,  Jin Seok Lee ,  Kyeong Lak Jeon ,  Jung Min Suh ,  Gi-Jun Gwon ,  Nam Gyu Park ,  Kyong Bo Eom ,  Jin Sun Kim ,  Dong Geun Ha ,  Kyoung Joo Kim

IPC分类号： G21C3/02

CPC分类号： G21C3/331 ,  G21C3/3315 ,  Y02E30/40

摘要： Disclosed herein is a hold-down spring unit for a top nozzle of a nuclear fuel assembly. The hold-down spring unit is coupled to the upper end of the top nozzle of the nuclear fuel assembly. The hold-down spring unit includes a first spring which acts against a hold-down force with respect to the nuclear fuel assembly under start-up conditions or hot full power conditions of a nuclear reactor, and a second spring which acts against a hold-down force with respect to the nuclear fuel assembly under start-up conditions of the nuclear reactor. The present invention reduces the hold-down margin under start-up conditions or hot full power conditions, thus enhancing the mechanical and structural stability of the nuclear fuel assembly.

摘要翻译： 本文公开了一种用于核燃料组件的顶部喷嘴的压紧弹簧单元。 压紧弹簧单元联接到核燃料组件的顶部喷嘴的上端。 压紧弹簧单元包括第一弹簧，其在核反应堆的启动条件或热全功率条件下抵抗相对于核燃料组件的压紧力，以及第二弹簧， 在核反应堆的启动条件下对核燃料组件的下降力。 本发明在启动条件或热全功率条件下降低了压紧余量，从而提高了核燃料组件的机械和结构稳定性。

公开(公告)号：US20080156771A1

公开(公告)日：2008-07-03

申请号：US11965956

申请日：2007-12-28

申请人： Yun Kwang JEON ,  Jin Seok Lee ,  Yung Hee Lee ,  Gi Tae Kim

发明人： Yun Kwang JEON ,  Jin Seok Lee ,  Yung Hee Lee ,  Gi Tae Kim

IPC分类号： C23F1/00 ,  B44C1/22

CPC分类号： H01J37/3233 ,  H01J37/32357

摘要： An etching apparatus using a neutral beam includes an electron emission unit to convert an ion beam, extracted from plasma by a plurality of grids, into a neutral beam by colliding the ion beam with electrons to prevent the ion beam from physically colliding with the electron emission unit, thus preventing the damage to a neutralization unit and generation of foreign substances with a simple structure. Further, the etching apparatus converts the ion beam into the neutral beam at a high neutralizing efficiency without causing directionality and energy losses, and generates a neutral beam having a large area, thus uniformly etching a semiconductor wafer.

摘要翻译： 使用中性光束的蚀刻装置包括电子发射单元，用于通过使离子束与电子碰撞来将通过多个栅极从等离子体提取的离子束转换成中性束，以防止离子束与电子发射物理碰撞 单元，从而防止中和单元的损坏和结构简单的异物的产生。 此外，蚀刻装置以高中和效率将离子束转换成中性光束，而不引起方向性和能量损失，并且产生具有大面积的中性光束，因此均匀地蚀刻半导体晶片。

公开(公告)号：US07285788B2

公开(公告)日：2007-10-23

申请号：US11208728

申请日：2005-08-23

申请人： Yung Hee Lee ,  Yun Kwang Jeon ,  Jin Seok Lee

发明人： Yung Hee Lee ,  Yun Kwang Jeon ,  Jin Seok Lee

IPC分类号： H01J27/00 ,  H01J49/42

CPC分类号： H01J37/08 ,  H01J27/024

摘要： An ion beam extractor controls a direction and an intensity of ion beams by adjusting a voltage applied to a grid having slits formed therein, thereby enhancing uniformity of an etching rate of a wafer, leading to an increase of productivity of semiconductor diodes. The ion beam extractor comprises an ion source to produce an ion beam and at least one grid located at a rear end of the ion source in a progressing path of the ion beam produced by the ion source to adjust a direction of the ion beam by controlling a voltage applied to the at least one grid.

摘要翻译： 离子束提取器通过调节施加到其上形成有狭缝的栅格的电压来控制离子束的方向和强度，从而提高晶片的蚀刻速率的均匀性，从而提高半导体二极管的生产率。 离子束提取器包括离子源以产生离子束和位于离子源的后端处的离子源的至少一个格栅，在由离子源产生的离子束的前进路径中，通过控制离子束来调节离子束的方向 施加到所述至少一个栅格的电压。