Resistance temperature sensors for head-media and asperity detection
    32.
    发明授权
    Resistance temperature sensors for head-media and asperity detection 有权
    电阻温度传感器用于头部介质和粗糙度检测

    公开(公告)号:US08737009B2

    公开(公告)日:2014-05-27

    申请号:US13299094

    申请日:2011-11-17

    IPC分类号: G11B21/02

    摘要: A temperature sensor of a head transducer measures temperature near or at the close point. The measured temperature varies in response to changes in spacing between the head transducer and a magnetic recording medium. A detector is coupled to the temperature sensor and is configured to detect a change in a DC component of the measured temperature indicative of onset of contact between the head transducer and the medium. Another head transducer configuration includes a sensor having a sensing element with a high temperature coefficient of resistance to interact with asperities of the medium. Electrically conductive leads are connected to the sensing element and have a low temperature coefficient of resistance relative to that of the sensing element, such thermally induced resistance changes in the leads have a negligible effect on a response of the sensing element to contact with the asperities.

    摘要翻译: 头传感器的温度传感器测量靠近或接近的温度。 测量的温度响应于头部换能器和磁记录介质之间的间隔的变化而变化。 检测器耦合到温度传感器并且被配置为检测指示头部换能器和介质之间的接触开始的测量温度的DC分量的变化。 另一个头部传感器配置包括传感器,该传感器具有具有高温度系数的传感元件,以与介质的粗糙度相互作用。 导电引线连接到感测元件并且具有相对于感测元件的电阻的低温度系数,引线中的这种热感应电阻变化对感测元件与凹凸接触的响应具有可忽略的影响。

    Adjusting heater current to reduce read transducer asymmetry
    33.
    发明授权
    Adjusting heater current to reduce read transducer asymmetry 有权
    调节加热器电流以减少读取传感器的不对称性

    公开(公告)号:US08737005B1

    公开(公告)日:2014-05-27

    申请号:US12985952

    申请日:2011-01-06

    IPC分类号: G11B5/03 G11B27/36 G11B21/02

    摘要: An asymmetry is determined of a signal generated by a read transducer in proximity to a changing magnetic field of a magnetic media. In response to determining the asymmetry of the signal, a current flowing through a heater of the read transducer is adjusted to cause a change to a magnetic field generated by the current. The change to the magnetic field generated by the current reduces the asymmetry of the signal.

    摘要翻译: 确定由读取传感器在磁性介质的变化磁场附近产生的信号的不对称性。 响应于确定信号的不对称性,流过读取换能器的加热器的电流被调节以引起由电流产生的磁场的变化。 由电流产生的磁场的变化减小了信号的不对称性。

    Domain wall free shields of MR sensors

    公开(公告)号:US20070217081A1

    公开(公告)日:2007-09-20

    申请号:US11804008

    申请日:2007-05-16

    申请人: Declan Macken

    发明人: Declan Macken

    IPC分类号: G11B5/31

    CPC分类号: G11B33/121 G11B5/59627

    摘要: A magnetic reader of the present invention comprises an MR sensor shielded by a magnetic shield including single domain soft magnetic materials. The domain wall free magnetic shield includes an unbiased soft magnetic layer and a biased soft magnetic layer separated by a non-magnetic layer. The easy axis of the biased layer is oriented to create a path for magnetic flux through the biased and unbiased layers thereby reducing the demagnetization field of the shield. A biasing layer maintains the first and second magnetic layers as single domain magnets. The biasing layer is further shaped to define a quiet zone where the biasing layer does not overlay the MR sensor.

    Reader shield/electrode structure for improved stray field and electrical performance
    37.
    发明申请
    Reader shield/electrode structure for improved stray field and electrical performance 失效
    读取器屏蔽/电极结构,用于改善杂散场和电气性能

    公开(公告)号:US20070002502A1

    公开(公告)日:2007-01-04

    申请号:US11172350

    申请日:2005-06-30

    IPC分类号: G11B5/33 G11B5/127

    摘要: A magnetic sensing device includes a first electrode, a second electrode, a first magnetic shield, a second magnetic shield, and a sensor. The first magnetic shield forms at least a portion of the first electrode. The second magnetic shield includes a first region that forms at least a portion of the first electrode and a second region that forms at least a portion of the second electrode. The sensor is positioned between the first and second magnetic shields and is electrically connected in series between the first and second electrodes.

    摘要翻译: 磁感测装置包括第一电极,第二电极,第一磁屏蔽,第二磁屏蔽和传感器。 第一磁屏蔽形成第一电极的至少一部分。 第二磁屏蔽包括形成第一电极的至少一部分的第一区域和形成第二电极的至少一部分的第二区域。 传感器位于第一和第二磁屏蔽之间并串联电连接在第一和第二电极之间。

    Films for pole-tip recession adjustment
    38.
    发明申请
    Films for pole-tip recession adjustment 有权
    极点衰退调整片

    公开(公告)号:US20060061910A1

    公开(公告)日:2006-03-23

    申请号:US11265628

    申请日:2005-11-02

    摘要: A sensor comprises a transducer portion including a semi-permanently deformable portion. A deformation of the semi-permanently deformable portion in response to an activation energy deforms the transducer portion. The deformation is retained after the activation energy is removed. In another embodiment of the invention, a transducer comprises a body having an active element, a magnetostrictive element and a magnet having a magnetic field. The magnetic field causes a deformation of the magnetostrictive portion thereby adjusting the position of the active element.

    摘要翻译: 传感器包括包括半永久变形部分的换能器部分。 响应于激活能量的半永久变形部分的变形使换能器部分变形。 在去除活化能后,保留变形。 在本发明的另一个实施例中,换能器包括具有有源元件的主体,磁致伸缩元件和具有磁场的磁体。 磁场引起磁致伸缩部分的变形,从而调节有源元件的位置。

    High magnetic anisotropy hard magnetic bias element
    39.
    发明申请
    High magnetic anisotropy hard magnetic bias element 有权
    高磁各向异性硬磁偏置元件

    公开(公告)号:US20050105223A1

    公开(公告)日:2005-05-19

    申请号:US10715149

    申请日:2003-11-17

    IPC分类号: G11B5/127 G11B5/33 G11B5/49

    CPC分类号: G11B5/493

    摘要: A magnetoresistive sensor having an MR stack biased by high anisotropy hard bias elements thereby reducing distortion in sensor operation and improving head to head operational values. The high anisotropy hard bias elements are formed from a hard magnetic material deposited in a thin film having a substantially axial preferred direction of magnetic anisotropy prior to application of a setting field. The magnetic anisotropy in the hard magnetic material is formed by oblique deposition in a direction approximately normal to the preferred direction of anisotropy in the resulting hard bias element.

    摘要翻译: 磁阻传感器具有由高各向异性硬偏置元件偏置的MR堆叠,从而减少传感器操作中的失真并改善头对头操作值。 高度各向异性的硬偏压元件由在施加设定场之前具有基本轴向优选的磁各向异性方向的薄膜中沉积的硬磁性材料形成。 硬磁性材料中的磁各向异性通过在所得硬偏置元件的大致垂直于各向异性优选方向的方向上的倾斜沉积形成。

    Tunneling magnetoresistive sensor with spin polarized current injection
    40.
    发明授权
    Tunneling magnetoresistive sensor with spin polarized current injection 有权
    具有自旋极化电流注入的隧道磁阻传感器

    公开(公告)号:US06781801B2

    公开(公告)日:2004-08-24

    申请号:US10054130

    申请日:2002-01-22

    IPC分类号: G11B539

    摘要: A tunneling magnetoresistive (TMR) stack configured to operate in a current-perpendicular-to-plane (CPP) mode has a plurality of layers including a spin valve and a barrier layer. The spin valve is used to inject a spin polarized sense current into the barrier layer for increasing a magnetoresistive (MR) ratio of the TMR stack.

    摘要翻译: 配置为在电流垂直于平面(CPP)模式中工作的隧道磁阻(TMR)堆叠具有包括自旋阀和阻挡层的多个层。 自旋阀用于将自旋极化感测电流注入阻挡层,以增加TMR堆叠的磁阻(MR)比。