-
公开(公告)号:US11744788B2
公开(公告)日:2023-09-05
申请号:US17803532
申请日:2022-08-15
申请人: James D. Welch
发明人: James D. Welch
CPC分类号: A61K8/4953 , A61K8/922 , A61N2/02 , A61P17/14 , A61Q7/00 , A61H2205/021
摘要: Methodology for encouraging hair growth in male humans, and more particularly to methodology which involves application of electromagnetic radiation, mechanical vibrations, along with applications of combined minoxidil, mint oil, (preferably menthol containing essential peppermint oil), ginger oil, lavender oil, castor bean oil, jojoba oil; melaleuca oil, cumin oil, D-alpha tocopherol (vitamin E) infused oil, biotin infused oil and a single selection, or dry mixture and/or liquid “tea” formed from selections from the group consisting of powdered saw palmetto; powdered horsetail; powdered ginger; powdered stinging nettles; powdered horny goat weed; powdered pueraria lobate; powdered Tribulus terrestris; powdered ashwagandha; powdered capsicum; powdered habenero; powdered green tea; powdered sage; powdered gingko biloba; powdered myrrh; powdered alpha-hydroxy; powdered Aloe vera; powdered wheat protein; powdered wheat starch; powdered casein, powdered keratin, powdered folic acid; powdered fenugreek seed and powdered biotin powdered ginseng Root; powdered vetiver grass; powdered caffeine; powdered Co-enzyme Q; powdered folate; powdered gotukola leaf; powdered milk thistle; powdered African pygeum; powdered stinging nettles; powdered gingko biloba; powdered myrrh; powdered alpha-hydroxy; powdered caffeine; powdered niacinamide (NAD) and/or niacin; and powdered Nigella sativa; powdered Eclipta alba; powdered Centella asiatica; powdered Phyllanthus emblica in water and alcohol, or an oil.
-
公开(公告)号:US10342646B2
公开(公告)日:2019-07-09
申请号:US15731373
申请日:2017-06-07
申请人: James D. Welch , Janet M. Wehrli
发明人: James D. Welch , Janet M. Wehrli
IPC分类号: A61C5/20 , A61C17/16 , A61K6/027 , A61C3/00 , A61C17/00 , A61C13/20 , A61C8/00 , A61K6/00 , A61K6/06
摘要: A method of smoothing teeth by, for instance, filling in cracks, chips and eroded areas by applying calcium and/or casein and/or phosphate and a source of OH− ions thereto. The method optionally provides that very thin layer(s) of dental cement be interlaced with other applied materials, and that the results be maintained in contact with the teeth involved by application of a composition of matter that adheres to said teeth and holds the results in place, while allowing at least some permeation of saliva therethrough. The method can optionally involve application of a backing strip or tray or the like to secure the other materials in place, but this is not a requirement where the composition of matter is sufficiently securing.
-
公开(公告)号:USD661001S1
公开(公告)日:2012-05-29
申请号:US29373041
申请日:2011-02-23
申请人: James D. Welch
设计人: James D. Welch
-
公开(公告)号:USD660999S1
公开(公告)日:2012-05-29
申请号:US29373039
申请日:2011-02-23
申请人: James D. Welch
设计人: James D. Welch
-
公开(公告)号:US20110235044A1
公开(公告)日:2011-09-29
申请号:US13066755
申请日:2011-04-25
申请人: James D. Welch
发明人: James D. Welch
IPC分类号: G01B9/02
摘要: It is proposed that the Heisenberg Uncertainty Principle is a system-specific concept, and that using a reference Interference Pattern, or applying chaos concepts to the situation at the slits of a double slit system leads to the proposal that a photon or particle that contributes to a positive slope region in an interference pattern formed by a double slit system is more likely to have passed through the left slit of the double slit system, (as viewed from the source), and a particle or photon which contributes to a negative slope region of the interference pattern is more likely to have passed through the right slit thereof (again as viewed from the source). Further, an experiment comprising use of a laterally, (and/or perpendicular thereto), movable screen upon which particles impinge is proposed that, in the context of a double slit system, would allow verification of the proposal, and which would also, allow near-simultaneous measurement of particle position and momentum.
摘要翻译: 提出海森堡不确定性原则是一个系统特定的概念,并且使用参考干扰模式,或者将混沌概念应用于双狭缝系统狭缝处的情况,导致提出了一种有助于 通过双缝系统形成的干涉图案中的正斜率区域更可能已经通过双缝系统的左狭缝(从源观察)和有助于负斜率区域的粒子或光子 的干涉图案更可能已经通过其右狭缝(再次从源头观察)。 此外,包括使用横向,(和/或垂直于其)可动屏幕的实验被提出,其中在双缝系统的上下文中将允许验证该提案,并且还允许 近似同时测量颗粒的位置和动量。
-
公开(公告)号:US20110116096A1
公开(公告)日:2011-05-19
申请号:US12930200
申请日:2010-12-31
申请人: James D. Welch
发明人: James D. Welch
IPC分类号: G01B9/02
CPC分类号: G01B9/02
摘要: It is proposed that a particle or photon which contributes to a positive slope region in an interference pattern formed by a double slit system is, with certainty, more likely to have passed through the left slit of the double slit system, (as viewed from the photon or particle source), and a particle or photon which contributes to a negative slope region of the interference pattern is, with certainty, more likely to have passed through the right slit of the double slit system, (again, as viewed from the source of the photon or particle).
摘要翻译: 提出一种有助于由双缝系统形成的干涉图案中的正斜率区域的颗粒或光子确定地更可能已经穿过双缝系统的左狭缝(从 光子或粒子源),并且有助于干涉图案的负斜率区域的粒子或光子确定地更可能已经穿过双缝系统的右狭缝(再次,从源头观察 的光子或粒子)。
-
公开(公告)号:US20100309481A1
公开(公告)日:2010-12-09
申请号:US12806521
申请日:2010-08-16
申请人: James D. Welch
发明人: James D. Welch
摘要: An approach to challenging the absolute nature attributed to the Heisenberg uncertainty principal in the context of data obtained from a double slit system, wherein the double slit system is applied at least once with a multiplicity of photons or particles to produce a reference interference pattern on a first screen, and applied a second time to determine where a single photon or particle impacts a second screen. Comparison of projections from each slit through the point of impact of the single photon or particle on the second screen, to the reference interference pattern on the first screen, provides insight to which slit the single photon or particle passed.
摘要翻译: 在从双缝系统获得的数据的上下文中挑战海森堡不确定性原理的绝对性质的方法,其中双缝系统用多个光子或粒子施加至少一次以产生参考干涉图案 第一屏幕,并再次应用以确定单个光子或粒子在哪里撞击第二屏幕。 通过单个光子或颗粒在第二屏幕上的冲击点的每个狭缝的投影与第一屏幕上的参考干涉图案的比较,提供了对单个光子或粒子通过的狭缝的洞察。
-
公开(公告)号:US5760449A
公开(公告)日:1998-06-02
申请号:US578336
申请日:1995-12-26
申请人: James D. Welch
发明人: James D. Welch
IPC分类号: H01L27/06 , H01L27/07 , H01L27/092 , H01L27/095 , H01L29/78 , H01L29/76 , H01L29/94 , H01L31/062
CPC分类号: H01L27/0629 , H01L27/0727 , H01L27/092 , H01L27/095 , H01L29/7839
摘要: Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a seriesed combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided.
摘要翻译: 互补金属氧化物半导体(CMOS)肖特基势垒场效应晶体管系统,其是N和P沟道MOSFET的串联组合,其中N和P沟道肖特基势垒MOSFET的源肖特基势垒结是电互连的(而不是 公开了在常规扩散结CMOS中的漏极,肖特基势垒MOSFET系统展示了使用中的再生反相开关特性。 N沟道肖特基势垒MOSFET器件和P沟道肖特基势垒MOSFET器件都是独一无二的,因为它们只提供漏极电压与漏极电压之间的关系,作为栅极电压的函数,只有漏极电压和栅极电压的极性相反,参考源 作为公共端子,并且其中施加到栅极的电压的极性适于引起信道反转。 还提供了通过使用真空沉积的铬作为肖特基势垒形成金属的常规方法分别实际制造在P型和N型硅上的N沟道肖特基势垒MOSFET和N沟道肖特基势垒MOSFET的实验推导结果。
-
公开(公告)号:US5663584A
公开(公告)日:1997-09-02
申请号:US368149
申请日:1994-12-29
申请人: James D. Welch
发明人: James D. Welch
IPC分类号: H01L21/8238 , H01L27/06 , H01L27/07 , H01L27/092 , H01L27/095 , H01L29/78 , H03K19/0944 , H01L29/76
CPC分类号: H01L27/095 , H01L21/823814 , H01L27/0629 , H01L27/0727 , H01L27/092 , H01L29/7839 , Y10S257/902
摘要: (MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controled switching and effecting a direction of rectification.
摘要翻译: (MOS)器件系统 - 利用肖特基势垒源和漏极到沟道区域结。 报道了证明了制造的N沟道和P沟道肖特基势垒(MOSFET)器件以及具有类似于(CMOS)和非锁存(SRC)的操作特性的制造的单个器件的实验推导结果。 还公开了在涉及高掺杂等的(MOS)结构中使用基本上非整流的肖特基势垒和本征半导体,以允许器件区域的非整流互连和电接入。 因此,绝缘体实现了低漏电流器件的几何形状和制造工艺。 在P型,N型和本征半导体上形成的N沟道和/或P沟道肖特基势垒(MOSFET)器件的漏极到漏极,源极到漏极,源极到源极的选择性电互连允许实现肖特基势垒 (MOSFET),(MOSFET)负载,平衡差分(MOSFET)器件系统以及具有类似于(CMOS)工作特性的反相和非反相单器件,这些器件可用于调制,以及电压 控制切换,实现整流方向。
-
公开(公告)号:US20160252541A1
公开(公告)日:2016-09-01
申请号:US14999399
申请日:2016-05-03
申请人: James D. Welch
发明人: James D. Welch
CPC分类号: G21K1/00 , G01B2290/55 , G06N10/00
摘要: A method for analyzing the results of a Double Slit experiment in a way that allows forming a bridge between Quantum and Classical Physics.
摘要翻译: 一种用于以允许在量子和古典物理学之间形成桥梁的方式分析双切口实验的结果的方法。
-
-
-
-
-
-
-
-
-