公开(公告)号：US20170256587A1

公开(公告)日：2017-09-07

申请号：US15508980

申请日：2015-09-11

Applicant: NEC Corporation

Inventor： Yukihide TSUJI ,  Xu BAI ,  Makoto MIYAMURA ,  Toshitsugu SAKAMOTO ,  Munehiro TADA

IPC: H01L27/24 ,  H03K19/177 ,  H01L23/522 ,  H03K19/173 ,  H01L45/00 ,  H01L23/528

Abstract: A purpose of the invention is to provide a crossbar switch for reducing the layout areas of a crossbar switch and peripheral circuits thereof. A crossbar switch of the invention comprises: a plurality of first wires extending in a first direction; a plurality of second wires extending in a second direction; a plurality of third wires extending in a third direction; a plurality of fourth wires extending in a fourth direction; and a plurality of switch cells connected to the first and second wires. The first wires are skew relative to the second and fourth wires, while the third wires are skew relative to the second and fourth wires. The switch cells are connected to the third and fourth wires, and further, the third wires are also connected to the switch cells connected to the first wires adjacent to the respective first wires; or alternatively, further, the fourth wires are also connected to the switch cells connected to the second wires adjacent to the respective second wires.

公开(公告)号：US20130084698A1

公开(公告)日：2013-04-04

申请号：US13688903

申请日：2012-11-29

Applicant: NEC CORPORATION

Inventor： Yukihide TSUJI

IPC: H01L29/40

CPC classification number: H01L29/401 ,  H01L21/28282 ,  H01L27/11568 ,  H01L29/4234 ,  H01L29/66833 ,  H01L29/792

Abstract: Provided is an excellent nonvolatile storage device having advantageous in miniaturization and less variation in initial threshold value, and exhibiting a high writing efficiency, without an erasing failure and a retention failure. The nonvolatile storage device is characterized by including a film stack extending from between a semiconductor substrate and a gate electrode onto at least a surface of the gate electrode lying on a first impurity diffusion region side, the film stack including a charge accumulating layer and a tunnel insulating film sequentially from a gate electrode side.

Abstract translation: 提供了一种优异的非易失性存储装置，其具有小型化和初始阈值变化小，并且具有高写入效率，而没有擦除故障和保留故障。 非易失性存储装置的特征在于包括从半导体衬底和栅电极之间延伸到位于第一杂质扩散区域侧的栅电极的至少一个表面上的膜堆，膜堆包括电荷累积层和隧道 绝缘膜从栅电极侧顺序地形成。