公开(公告)号：US20210050517A1

公开(公告)日：2021-02-18

申请号：US17041772

申请日：2019-04-15

Applicant: NEC Corporation

Inventor： Naoki BANNO ,  Munehiro TADA

IPC: H01L45/00 ,  H01L27/24

Abstract: A semiconductor device includes a first insulation layer, a second insulation layer disposed on the first insulation layer and having an opening on an upper surface of the second insulation layer, a first electrode embedded in the second insulation layer and having an end exposed at the opening, a variable-resistance layer disposed on the first electrode and the second insulation layer in at least one region inside and around the opening, and a second electrode disposed on the variable-resistance layer. The opening and the second electrode are formed in a shape stretched in at least one axial direction.

公开(公告)号：US20160111153A1

公开(公告)日：2016-04-21

申请号：US14895239

申请日：2014-06-17

Applicant: NEC CORPORATION

Inventor： Munehiro TADA

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0011 ,  G11C13/0016 ,  G11C13/0064 ,  G11C2013/0076 ,  G11C2013/0092 ,  G11C2213/79

Abstract: In order to realize a switching element that is highly reliable and can be highly integrated, in a method for programming a switching element of the present invention, programming of the switching element is performed by increasing or decreasing a resistance value R of a resistive-change film by applying a first pulse voltage to a first electrode or a second electrode, a measurement of the resistance value R is performed, verification in which it is determined whether or not the measured resistance value R is equal to a desired value is performed, and reprogramming of the switching element is performed by applying a second pulse voltage whose polarity is the same as that of the first pulse voltage to the same electrode to which the first pulse voltage is applied on the basis of the resistance value R when the resistance value R is not equal to the desired value.

Abstract translation: 为了实现高度可靠性并且可以高度集成的开关元件，在本发明的开关元件的编程方法中，通过增加或减少电阻变化的电阻值R来执行开关元件的编程 通过对第一电极或第二电极施加第一脉冲电压进行电阻值R的测定，进行确定测量电阻值R是否等于期望值的验证，以及 开关元件的重新编程是通过将第二脉冲电压的极性与第一脉冲电压相同的第二脉冲电压基于电阻值R施加到施加了第一脉冲电压的同一电极上，当电阻值R 不等于所需值。

公开(公告)号：US20150340609A1

公开(公告)日：2015-11-26

申请号：US14410282

申请日：2013-06-03

Applicant: NEC Corporation

Inventor： Naoki BANNO ,  Munehiro TADA ,  Toshitsugu SAKAMOTO

IPC: H01L45/00

CPC classification number: H01L45/1253 ,  H01L45/085 ,  H01L45/1206 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1616 ,  H01L45/1675

Abstract: The present invention provides a non-volatile switching element that can be applied to a programmable-logic wiring changeover switch and in which an electrochemical reaction is used. Of the two electrodes for applying a bias voltage to the variable resistance layer of the non-volatile switching element, the electrode that does not feed metal ions to the variable resistance layer when the switch is in the ON state is made from a ruthenium alloy. The ruthenium alloy includes ruthenium and a metal in which the standard Gibbs energy of forming ΔG when metal ions are generated from the metal is higher in the negative direction than ΔG of ruthenium. As a result, it becomes possible to maintain the low-resistance state in the ON state for a longer period of time without increasing the amount of electrical current required when a switch is made between the ON state and the OFF state.

Abstract translation: 本发明提供一种非易失性开关元件，其可应用于可编程逻辑布线转换开关，并且其中使用电化学反应。 在用于向非易失性开关元件的可变电阻层施加偏置电压的两个电极中，当开关处于导通状态时不将金属离子供给到可变电阻层的电极由钌合金制成。 钌合金包括钌和金属，其中当从金属产生金属离子时，形成＆Dgr; G的标准吉布斯能量在负向上高于钌的Dgr; G。 结果，可以在较长时间内将低电阻状态保持在ON状态，而不会增加在ON状态和OFF状态之间进行开关时所需的电流量。

公开(公告)号：US20160359110A1

公开(公告)日：2016-12-08

申请号：US15120993

申请日：2015-02-18

Applicant: NEC CORPORATION

Inventor： Naoki BANNO ,  Munehiro TADA ,  Koichiro OKAMOTO

IPC: H01L45/00 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L45/1266 ,  G11C13/0007 ,  G11C13/0011 ,  G11C2213/15 ,  G11C2213/52 ,  H01L23/5226 ,  H01L23/53228 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1633 ,  H01L45/1675

Abstract: Provided is a nonvolatile switching element which has high retention ability even if programmed at a low current, while being suppressed in dielectric breakdown of a variable resistance layer during a reset operation. This switching element is provided with: a first electrode; a second electrode; and a variable resistance layer that is arranged between the first electrode and the second electrode and has ion conductivity. The first electrode contains a metal which generates metal ions that can be conducted in the variable resistance layer. The second electrode is provided with: a first electrode layer that is formed in contact with the variable resistance layer; and a second electrode layer that is formed in contact with the first electrode layer. The first electrode layer is formed of a ruthenium alloy that contains ruthenium and a first metal having a larger standard Gibbs energy of formation of oxide than ruthenium in the negative direction. The second electrode layer is formed of a nitride that contains the first metal. The content of the first metal in the first electrode layer is lower than the content of the first metal in the second electrode layer.

Abstract translation: 提供了即使在低电流下编程也具有高保持能力的非易失性开关元件，同时在复位操作期间抑制可变电阻层的电介质击穿。 该开关元件设置有：第一电极; 第二电极; 以及布置在第一电极和第二电极之间并具有离子传导性的可变电阻层。 第一电极含有产生可在可变电阻层中传导的金属离子的金属。 第二电极设置有：与可变电阻层接触形成的第一电极层; 以及形成为与第一电极层接触的第二电极层。 第一电极层由含有钌的钌合金和在负方向上具有比钌形成氧化物更大的标准吉布斯能量的第一金属形成。 第二电极层由含有第一金属的氮化物形成。 第一电极层中的第一金属的含量低于第二电极层中的第一金属的含量。

公开(公告)号：US20150340606A1

公开(公告)日：2015-11-26

申请号：US14655920

申请日：2014-01-15

Applicant: NEC CORPORATION

Inventor： Munehiro TADA ,  Toshitsugu SAKAMOTO ,  Naoki BANNO ,  Koichiro OKAMOTO

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/126 ,  G11C13/0002 ,  G11C2213/15 ,  G11C2213/78 ,  H01L27/2418 ,  H01L27/2427 ,  H01L27/2436 ,  H01L27/2472 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/1273 ,  H01L45/146 ,  H01L45/1675 ,  H01L45/1683

Abstract: In switching elements each using a two-terminal-type variable resistance element, improper writing or any improper operation is often caused and the reliability of the switching elements cannot be improved easily. A switching element according to the present invention is equipped with a first variable resistance element equipped with a first input/output terminal and a first connection terminal, a second variable resistance element equipped with a second input/output terminal and a second connection terminal, and a rectifying element equipped with a control terminal and a third connection terminal, wherein the first connection terminal, the second connection terminal and the third connection terminal are connected to one another.

Abstract translation: 在使用两端型可变电阻元件的开关元件中，经常引起不正确的写入或不正确的操作，并且不容易改善开关元件的可靠性。 根据本发明的开关元件配备有配备有第一输入/输出端子和第一连接端子的第一可变电阻元件，配备有第二输入/输出端子和第二连接端子的第二可变电阻元件，以及 配备有控制端子和第三连接端子的整流元件，其中第一连接端子，第二连接端子和第三连接端子彼此连接。

公开(公告)号：US20150318473A1

公开(公告)日：2015-11-05

申请号：US14709699

申请日：2015-05-12

Applicant: NEC Corporation

Inventor： Munehiro TADA ,  Makoto Miyamura ,  Hiromitsu Hada

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L27/2436 ,  G11C13/0007 ,  G11C13/0014 ,  G11C13/003 ,  G11C13/0069 ,  G11C2013/0073 ,  H01L27/101 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/14 ,  H01L45/146

Abstract: A semiconductor device, includes first, second, and third switching elements. The third switching element comprises first and second terminals. Each of the first and second switching elements comprise a unified ion conductor, a first electrode disposed to contact the ion conductor and supply metal ions thereto, and a second electrode disposed to contact the ion conductor and is less susceptible to ionization than the first electrode. The first electrodes of the first switching element and the second switching element are electrically connected. The first terminal of the third switching element is electrically connected to only the first electrodes which are electrically connected, or the second electrode of the first switching element and the second electrode of the second switching element are electrically connected. The first terminal of the third switching element is electrically connected to only the second electrodes which are electrically connected.

Abstract translation: 半导体器件包括第一，第二和第三开关元件。 第三开关元件包括第一和第二端子。 第一和第二开关元件中的每一个包括统一的离子导体，设置成接触离子导体并向其提供金属离子的第一电极和设置成与离子导体接触并且比第一电极不易电离的第二电极。 第一开关元件和第二开关元件的第一电极电连接。 第三开关元件的第一端子仅电连接到电连接的第一电极，或者第一开关元件的第二电极和第二开关元件的第二电极电连接。 第三开关元件的第一端子仅电连接到电连接的第二电极。

公开(公告)号：US20150155487A1

公开(公告)日：2015-06-04

申请号：US14574666

申请日：2014-12-18

Applicant: NEC Corporation

Inventor： Munehiro TADA ,  Koichiro OKAMOTO ,  Toshitsugu SAKAMOTO ,  Hiromitsu HADA

IPC: H01L45/00

CPC classification number: H01L45/1616 ,  H01C7/006 ,  H01C7/18 ,  H01C17/08 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/14 ,  H01L45/1675

Abstract: A resistance changing element according to the present invention comprises a first electrode (101) and a second electrode (103); and an ion conducting layer (102) that is formed between the first electrode (101) and the second electrode (103) and that contains at least oxygen and carbon.

Abstract translation: 根据本发明的电阻改变元件包括第一电极（101）和第二电极（103）; 和形成在第一电极（101）和第二电极（103）之间并且至少含有氧和碳的离子传导层（102）。

公开(公告)号：US20200106443A1

公开(公告)日：2020-04-02

申请号：US16495885

申请日：2018-04-05

Applicant: NEC Corporation

Inventor： Naoki BANNO ,  Munehiro TADA

IPC: H03K19/17756 ,  H03K19/17728 ,  H01L45/00 ,  H01L27/24 ,  H03K19/185

Abstract: A switch circuit includes: a plurality of four-terminal switches having variable-resistance elements and a rectifier element serially connected; an input line and an output line, at least one of which is multiply present, to which are connected terminals of two switches other than terminals at which the variable-resistance terminals are serially connected; and a control line to which are connected the terminals of the two switches other than the terminals at which the rectifier elements are serially connected, the control line, together with the input line and the output line, turning on and off in turn, by pair, the pair of variable-resistance elements connected to the input line and the pair of variable-resistance elements connected to the output line, among the variable-resistance elements of the plurality of four-terminal switches of the four-terminal switches connected to the input line or the output line.

公开(公告)号：US20180166630A1

公开(公告)日：2018-06-14

申请号：US15577408

申请日：2016-06-08

Applicant: NEC Corporation

Inventor： Munehiro TADA ,  Naoki BANNO ,  Koichiro OKAMOTO

IPC: H01L45/00

CPC classification number: H01L45/1266 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/14 ,  H01L45/146

Abstract: In order to improve the number rewrites by improving the dielectric breakdown resistance of an ion conducting layer in a variable resistance element, this variable resistance element is provided with: a first electrode that contains at least copper; a second electrode that contains at least Ru, nitrogen and a first metal; and an ion conducting layer that is positioned between the first electrode and the second electrode.

公开(公告)号：US20170309817A1

公开(公告)日：2017-10-26

申请号：US15523435

申请日：2015-11-18

Applicant: NEC Corporation

Inventor： Toshitsugu SAKAMOTO ,  Munehiro TADA

IPC: H01L45/00

CPC classification number: H01L45/1266 ,  H01L27/105 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1633

Abstract: The objective of the present invention is to make it possible to manufacture, with a high yield, a metal deposition type variable-resistance element with which variability of a program voltage and a leakage current under a high resistance state is reduced, while the program voltage is reduced. This variable-resistance element comprises: a first electrode which is embedded in a first insulating film and which supplies metal ions, an upper surface of the first electrode being exposed out of the first insulating film by means of an opening portion in a second insulating film covering the first insulating film; a metal deposition type variable-resistance film which covers the opening portion and is in contact with the upper surface of the first electrode; and a second electrode in contact with the upper surface of the variable-resistance film. The width of the opening portion is greater than the width of the upper surface of the first electrode, and the edge portions of the opening portion are provided in such a way that there is a margin between the edge portions of the opening portion and the edge portions of the upper surface of the first electrode which face the edge portions of the opening portion.