公开(公告)号：US20230116574A1

公开(公告)日：2023-04-13

申请号：US17930118

申请日：2022-09-07

Applicant: NGK Insulators, Ltd.

Inventor： Tatsuya KUNO ,  Seiya INOUE ,  Hiroshi TAKEBAYASHI ,  Masaki ISHIKAWA

IPC: H01J37/32 ,  H01L21/687

Abstract: A wafer placement table is a wafer placement table that includes a refrigerant flow channel through which refrigerant is flowed and includes a top base including a ceramic base incorporating an electrode and having a wafer placement surface on a top surface of the ceramic base, a bottom base on a top surface of which a flow channel groove defining a side wall and a bottom of the refrigerant flow channel is provided, and a seal member disposed between the top base and the bottom base so as to seal the refrigerant flow channel from an outside.

公开(公告)号：US20220400539A1

公开(公告)日：2022-12-15

申请号：US17657138

申请日：2022-03-30

Applicant: NGK Insulators, Ltd.

Inventor： Seiya INOUE ,  Tatsuya KUNO

IPC: H05B3/28 ,  H05B3/26 ,  H01L21/683 ,  H05B3/06

Abstract: A member for a semiconductor manufacturing apparatus includes a disk-shaped or annular ceramic heater, a metal base, an adhesive element bonding the metal base and the ceramic heater, an adhesive protective element disposed between the ceramic heater and the metal base to extend along a periphery of the adhesive element, and an anti-adhesion layer disposed between the adhesive element and the protective element, the anti-adhesion layer preventing adhesion between the adhesive element and the protective element.

公开(公告)号：US20250105043A1

公开(公告)日：2025-03-27

申请号：US18628923

申请日：2024-04-08

Applicant: NGK INSULATORS, LTD.

Inventor： Seiya INOUE ,  Tatsuya KUNO

IPC: H01L21/683 ,  H01J37/32

Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate that has an upper surface including a reference surface on which multiple small projections for supporting a wafer are provided and that contains an electrostatic electrode; a plug arrangement hole that is provided in the ceramic plate; an electrostatic electrode opening portion that is provided at a position in the electrostatic electrode through which the plug arrangement hole extends; a cooling plate that is provided on a lower surface of the ceramic plate; a gas hole that extends through the cooling plate and that is in communication with the plug arrangement hole; a plug that is arranged in the plug arrangement hole and that includes a gas flow path; and a raised portion that surrounds the gas flow path and that has a top surface higher than the reference surface and lower than top surfaces of the small projections.

公开(公告)号：US20250079229A1

公开(公告)日：2025-03-06

申请号：US18583957

申请日：2024-02-22

Applicant: NGK INSULATORS, LTD.

Inventor： Seiya INOUE ,  Tatsuya KUNO ,  Shinya YOSHIDA ,  Takahiro ANDO

IPC: H01L21/687 ,  H01J37/32 ,  H01L21/683

Abstract: A wafer placement table includes: a ceramic substrate that has a wafer placement surface at an upper surface of the ceramic substrate; an electrode that is incorporated in the ceramic substrate; and an electrically conductive electrode extraction portion that is incorporated in the ceramic substrate and is electrically connected to the electrode. A volume content percentage of a ceramic material that is identical to a main component of the ceramic substrate is high in the electrode extraction portion compared with the electrode.

公开(公告)号：US20250079134A1

公开(公告)日：2025-03-06

申请号：US18588280

申请日：2024-02-27

Applicant: NGK INSULATORS, LTD.

Inventor： Tatsuya KUNO ,  Seiya INOUE

IPC: H01J37/32 ,  H01L21/683

Abstract: A member for semiconductor manufacturing apparatus includes a central ceramic member having a wafer placement surface on an upper surface; an annular outer circumferential ceramic member having a focus ring placement surface on an upper surface; and a conductive base member having a central support joined to the central ceramic member, and an outer circumferential support joined to the outer circumferential ceramic member, wherein an outer circumferential surface of the central ceramic member and an inner circumferential surface of the outer circumferential ceramic member each change in diameter in an up-down direction, and a maximum diameter of the outer circumferential surface of the central ceramic member is smaller than a maximum diameter of the inner circumferential surface of the outer circumferential ceramic member, and larger than a minimum diameter of the inner circumferential surface of the outer circumferential ceramic member, and the central ceramic member is insulating ceramics.

公开(公告)号：US20250069929A1

公开(公告)日：2025-02-27

申请号：US18583974

申请日：2024-02-22

Applicant: NGK INSULATORS, LTD.

Inventor： Seiya INOUE ,  Tatsuya KUNO ,  Tomoyuki MINAMI

IPC: H01L21/683 ,  H01J37/32

Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate having a wafer placement surface on an upper surface, an electrostatic electrode embedded in the ceramic plate, an electrode lead-out portion embedded in the ceramic plate and extending downward from the electrostatic electrode, a terminal hole extending from a lower surface of the ceramic plate to the electrode lead-out portion, a terminal in the terminal hole, a conductive bonding portion located between the terminal and the electrode lead-out portion and bonding the terminal and the electrode lead-out portion together. The terminal hole has a terminal hole tapering surface that tapers toward a bottom of the hole, and the terminal hole tapering surface intersects a lateral surface of the electrode lead-out portion.

公开(公告)号：US20250014939A1

公开(公告)日：2025-01-09

申请号：US18510850

申请日：2023-11-16

Applicant: NGK INSULATORS, LTD.

Inventor： Tatsuya KUNO ,  Seiya INOUE

IPC: H01L21/687 ,  H01L21/67

Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate in which an electrode is embedded; a power feeder receiving hole extending from a lower surface of the ceramic plate to a position close to the electrode; a power feeder inserted in the power feeder receiving hole; a recess extending from a bottom surface of the power feeder receiving hole to the electrode or an electrode lead-out portion attached to the electrode, the recess having an opening diameter smaller than a diameter of the power feeder receiving hole and greater than or equal to a diameter of the power feeder; a first brazing material layer filling the recess; and a second brazing material layer bonding an entire end surface of the power feeder to the first brazing material layer and not extending to a boundary between the bottom surface and a side surface of the power feeder receiving hole.

公开(公告)号：US20250014875A1

公开(公告)日：2025-01-09

申请号：US18895491

申请日：2024-09-25

Applicant: NGK INSULATORS, LTD.

Inventor： Seiya INOUE ,  Tatsuya KUNO

IPC: H01J37/32

Abstract: A wafer placement table includes a ceramic substrate having a wafer placement surface on an upper surface thereof and containing an electrode therein; a conductive substrate disposed adjacent to a lower surface of the ceramic substrate, serving also as a plasma generating electrode, and having the same diameter as the ceramic substrate; a support substrate disposed adjacent to a lower surface of the conductive substrate, having a greater diameter than the conductive substrate, and electrically insulated from the conductive substrate; and a mounting flange constituting a part of the support substrate and radially extending out of the conductive substrate.

公开(公告)号：US20240364241A1

公开(公告)日：2024-10-31

申请号：US18513850

申请日：2023-11-20

Applicant: NGK INSULATORS, LTD.

Inventor： Taro USAMI ,  Seiya INOUE ,  Tatsuya KUNO ,  Tomoyuki MINAMI

IPC: H02N13/00 ,  H01R4/02

CPC classification number: H02N13/00 ,  H01R4/027 ,  H01L21/6833

Abstract: A feeder member is used to supply electricity to an electrode embedded in a ceramic base. The feeder member includes an electrode-side terminal that is made of a high-melting-point metal containing material and joined to the electrode, an intermediate member that is made of a Cu containing material and directly joined to the electrode-side terminal without using a brazing material, a cable support member that is made of a Cu containing material and joined to the intermediate member, and a cable that is made of a Cu containing material and that has one end whose end surface is welded to the cable support member.

公开(公告)号：US20230317430A1

公开(公告)日：2023-10-05

申请号：US18164799

申请日：2023-02-06

Applicant: NGK Insulators, Ltd.

Inventor： Ikuhisa MORIOKA ,  Hiroshi TAKEBAYASHI ,  Tatsuya KUNO ,  Seiya INOUE

IPC: H01J37/32 ,  H01L21/687

CPC classification number: H01J37/32715 ,  H01J37/32642 ,  H01J37/32174 ,  H01L21/68757 ,  H01L21/68785 ,  H01J2237/334 ,  H01J2237/332

Abstract: The wafer placement table includes a ceramic plate and a conductive substrate. The ceramic plate includes a plate annular portion at an outer circumference of a plate central portion having a wafer placement surface. The plate annular portion has an annular focus ring placement surface. The conductive substrate is provided on a lower surface of the ceramic plate and used as a radio-frequency source electrode. At the same height from the focus ring placement surface in the plate annular portion, a focus ring attraction electrode and a focus-ring-side radio-frequency bias electrode to which a bias radio frequency is supplied are embedded.