公开(公告)号：US06380603B1

公开(公告)日：2002-04-30

申请号：US09707158

申请日：2000-11-07

申请人： Takahiro Takimoto ,  Toshihiko Fukushima ,  Isamu Ohkubo ,  Makoto Hosokawa ,  Masaru Kubo

发明人： Takahiro Takimoto ,  Toshihiko Fukushima ,  Isamu Ohkubo ,  Makoto Hosokawa ,  Masaru Kubo

IPC分类号： H01L3106

CPC分类号： H01L31/02024 ,  H01L27/144

摘要： A semiconductor device includes: a photosensitive section essentially composed of a PN junction between a semiconductor multilayer structure of the first conductivity type and a first semiconductor layer of the second conductivity type; and a partitioning portion for splitting the photosensitive section into a plurality of regions. The semiconductor multilayer structure of the first conductivity type includes: a semiconductor substrate of the first conductivity type; a first semiconductor layer of the first conductivity type; and a second semiconductor layer of the first conductivity type. The partitioning portion includes a third semiconductor layer of the first conductivity type extending from the first semiconductor layer of the second conductivity type so as to reach the second semiconductor layer of the first conductivity type.

摘要翻译： 半导体器件包括：基本上由第一导电类型的半导体多层结构和第二导电类型的第一半导体层之间的PN结组成的感光部分; 以及用于将感光部分分成多个区域的分隔部分。 第一导电类型的半导体多层结构包括：第一导电类型的半导体衬底; 第一导电类型的第一半导体层; 和第一导电类型的第二半导体层。 分隔部分包括从第二导电类型的第一半导体层延伸的第一导电类型的第三半导体层，以到达第一导电类型的第二半导体层。

公开(公告)号：US5466962A

公开(公告)日：1995-11-14

申请号：US227878

申请日：1994-04-15

申请人： Motohiko Yamamoto ,  Masaru Kubo

发明人： Motohiko Yamamoto ,  Masaru Kubo

IPC分类号： H01L21/761 ,  C04B20/10 ,  H01L27/144 ,  H01L31/0216 ,  H01L31/04 ,  H01L31/10 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L27/1443 ,  C04B20/1077 ,  H01L31/02161

摘要： A light-receiving semiconductor device with improved light sensitivity. On a semiconductor substrate of a first conductivity type is formed a plurality of buried layers of a second conductivity type divided by a narrow dividing region. A surface semiconductor layer of the first conductivity type covers the buried layers and the substrate. A connecting semiconductor region of the second conductivity type extends from each of the plurality of the buried layers to the surface of the surface semiconductor layer. An anti-light-reflecting film formed on the surface of the surface semiconductor layer covers a region above the dividing region as well as above the plurality of buried layers. Each of the plurality of buried layers forms a light responsive element with the substrate.

摘要翻译： 具有改善的光敏度的光接收半导体器件。 在第一导电类型的半导体衬底上形成有被窄分割区划分的多个第二导电类型的掩埋层。 第一导电类型的表面半导体层覆盖掩埋层和衬底。 第二导电类型的连接半导体区域从多个掩埋层中的每一个延伸到表面半导体层的表面。 形成在表面半导体层的表面上的防反射膜覆盖分割区域上方的区域以及多个掩埋层的上方。 多个掩埋层中的每一个与基板形成光响应元件。