公开(公告)号：US07301142B2

公开(公告)日：2007-11-27

申请号：US11499696

申请日：2006-08-07

申请人： Koichi Shichi ,  Isamu Ohkubo

发明人： Koichi Shichi ,  Isamu Ohkubo

IPC分类号： G01D5/34

CPC分类号： H03M1/301 ,  G01D5/36 ,  H03M1/485

摘要： A photodetector for an optical encoder has plural sets of segmented photodiodes, each set of which is made by two adjoining segmented photodiodes capable of coping with a scale slit having a reference resolution. Output lines of the two adjoining segmented photodiodes are connected together in each set of the photodiodes. These output lines are connected to output lines of the corresponding segmented photodiodes in the other sets. The two adjoining segmented photodiodes function like one segmented photodiode, and thereby, the resolution of the applied scale slit is made ½ of the reference resolution. Thus, this photodetector easily copes with a scale slit having a half resolution of the reference resolution at low cost only by modification of wiring without changing any configuration of the segmented photodiodes.

摘要翻译： 用于光学编码器的光电检测器具有多组分段光电二极管，每组由两个相邻的分段光电二极管制成，能够对准具有参考分辨率的刻度狭缝。 两个相邻的分段光电二极管的输出线在每组光电二极管中连接在一起。 这些输出线连接到其他组中对应的分段光电二极管的输出线。 两个相邻的分段光电二极管的功能类似于一个分段的光电二极管，因此，施加的刻度狭缝的分辨率为参考分辨率的1/2。 因此，该光电检测器仅通过修改布线而容易地处理具有参考分辨率的半分辨率的刻度狭缝，而不改变分段光电二极管的任何配置。

公开(公告)号：US20050045979A1

公开(公告)日：2005-03-03

申请号：US10497242

申请日：2002-11-29

申请人： Tatsuya Morioka ,  Shigeki Hayashida ,  Yoshihiko Tani ,  Isamu Ohkubo ,  Hideo Wada

发明人： Tatsuya Morioka ,  Shigeki Hayashida ,  Yoshihiko Tani ,  Isamu Ohkubo ,  Hideo Wada

IPC分类号： H01L31/0216 ,  H01L31/103 ,  H01L27/14

CPC分类号： H01L31/02161 ,  H01L31/103 ,  H01L31/1035

摘要： A first P-type diffusion layer and a P-type semiconductor layer are provided on a silicon substrate, and two N-type diffusion layers are provided on a front surface of this P-type semiconductor layer to form two light receiving units. Three-layer translucent films, a first silicon oxide film, a silicon nitride film, and a second silicon oxide film are disposed on the N-type diffusion layers and on the P-type semiconductor layer between the two diffusion layers. Holes produced during a production process and distributed and captured in two interfaces between the three-layer translucent films can reduce a field intensity in the vicinity of the surface of the P-type semiconductor layer to below a conventional level and an inversion of a conductive type to reduce a leak current between the light receiving units accordingly.

摘要翻译： 在硅衬底上设置第一P型扩散层和P型半导体层，在该P型半导体层的前表面上设置两个N型扩散层，以形成两个光接收单元。 三层半透膜，第一氧化硅膜，氮化硅膜和第二氧化硅膜设置在两个扩散层之间的N型扩散层和P型半导体层上。 在生产过程中产生的并且在三层半透明膜之间的两个界面中分布和捕获的孔可以将P型半导体层的表面附近的场强降低到传统水平以下并导致导通型 以相应地减小光接收单元之间的泄漏电流。

公开(公告)号：US06404029B1

公开(公告)日：2002-06-11

申请号：US09656461

申请日：2000-09-06

申请人： Makoto Hosokawa ,  Naoki Fukunaga ,  Takahiro Takimoto ,  Masaru Kubo ,  Toshihiko Fukushima ,  Isamu Ohkubo

发明人： Makoto Hosokawa ,  Naoki Fukunaga ,  Takahiro Takimoto ,  Masaru Kubo ,  Toshihiko Fukushima ,  Isamu Ohkubo

IPC分类号： H01L2714

CPC分类号： H01L27/1443 ,  H01L31/0352

摘要： A photosensitive device includes a semiconductor substrate and a first semiconductor layer, both of a first conductivity type, with the semiconductor layer being formed on the semiconductor substrate and having a lower impurity concentration than that of the semiconductor substrate. A second semiconductor layer, of a second conductivity type, is formed on the first semiconductor layer and at least one diffusion layer of the first conductivity type is formed from the surface of the second semiconductor layer so as to reach the surface of the first semiconductor layer. The diffusion layer subdivides the second semiconductor layer into a plurality of semiconductor regions At least one photodiode portion for converting signal light into an electrical signal is formed at a junction between at least one of the plurality of semiconductor regions and the first semiconductor layer. A depletion layer which is formed in the first semiconductor layer when a reverse bias voltage is applied to the at least one photodiode portion has a field intensity of about 0.3 V/&mgr;m or more.

摘要翻译： 光敏器件包括半导体衬底和第一半导体层，它们都是第一导电型，半导体层形成在半导体衬底上，杂质浓度低于半导体衬底的半导体层。 第二导电类型的第二半导体层形成在第一半导体层上，并且从第二半导体层的表面形成至少一个第一导电类型的扩散层，以到达第一半导体层的表面 。 扩散层将第二半导体层细分为多个半导体区域在多个半导体区域和第一半导体层中的至少一个之间的接合处形成至少一个用于将信号光转换成电信号的光电二极管部分。 当向至少一个光电二极管部分施加反向偏置电压时，在第一半导体层中形成的耗尽层具有约0.3V / m 2以上的场强度。

公开(公告)号：US06380603B1

公开(公告)日：2002-04-30

申请号：US09707158

申请日：2000-11-07

申请人： Takahiro Takimoto ,  Toshihiko Fukushima ,  Isamu Ohkubo ,  Makoto Hosokawa ,  Masaru Kubo

发明人： Takahiro Takimoto ,  Toshihiko Fukushima ,  Isamu Ohkubo ,  Makoto Hosokawa ,  Masaru Kubo

IPC分类号： H01L3106

CPC分类号： H01L31/02024 ,  H01L27/144

摘要： A semiconductor device includes: a photosensitive section essentially composed of a PN junction between a semiconductor multilayer structure of the first conductivity type and a first semiconductor layer of the second conductivity type; and a partitioning portion for splitting the photosensitive section into a plurality of regions. The semiconductor multilayer structure of the first conductivity type includes: a semiconductor substrate of the first conductivity type; a first semiconductor layer of the first conductivity type; and a second semiconductor layer of the first conductivity type. The partitioning portion includes a third semiconductor layer of the first conductivity type extending from the first semiconductor layer of the second conductivity type so as to reach the second semiconductor layer of the first conductivity type.

摘要翻译： 半导体器件包括：基本上由第一导电类型的半导体多层结构和第二导电类型的第一半导体层之间的PN结组成的感光部分; 以及用于将感光部分分成多个区域的分隔部分。 第一导电类型的半导体多层结构包括：第一导电类型的半导体衬底; 第一导电类型的第一半导体层; 和第一导电类型的第二半导体层。 分隔部分包括从第二导电类型的第一半导体层延伸的第一导电类型的第三半导体层，以到达第一导电类型的第二半导体层。

公开(公告)号：US07307326B2

公开(公告)日：2007-12-11

申请号：US10499357

申请日：2002-12-10

申请人： Shigeki Hayashida ,  Tatsuya Morioka ,  Yoshihiko Tani ,  Isamu Ohkubo ,  Hideo Wada

发明人： Shigeki Hayashida ,  Tatsuya Morioka ,  Yoshihiko Tani ,  Isamu Ohkubo ,  Hideo Wada

IPC分类号： H01L31/00 ,  H01L31/0232

CPC分类号： H01L31/103 ,  H01L31/02161

摘要： A light receiving device includes a silicon substrate, a first P type diffusion layer on the silicon substrate, and a P type semiconductor layer on the P type diffusion layer. On a surface part of the P type semiconductor layer, two N type diffusion layers as light receiving parts, and a second P type diffusion layer between the two N type diffusion layers are provided. On the P type semiconductor layer, an antireflection film structure composed of a first silicon oxide formed by thermal oxidation and a second silicon oxide formed by CVD is provided. A film thickness of the first silicon oxide is set at about 15 nm, thus a defect in a interface between the first silicon oxide and the P type semiconductor layer is prevented. A film thickness of the second silicon oxide is set at about 100 nm, thus a leak current between cathodes is prevented when a power supply voltage is applied for long period of time.

摘要翻译： 光接收装置包括硅衬底，硅衬底上的第一P型扩散层和P型扩散层上的P型半导体层。 在P型半导体层的表面部分设置有作为光接收部的两个N型扩散层和在两个N型扩散层之间的第二P型扩散层。 在P型半导体层上，提供了由通过热氧化形成的第一氧化硅和通过CVD形成的第二氧化硅构成的抗反射膜结构。 第一氧化硅的膜厚设定为约15nm，因此防止了第一氧化硅与P型半导体层之间的界面的缺陷。 第二氧化硅的膜厚设定为约100nm，因此长时间施加电源电压时，能够防止阴极之间的漏电流。

公开(公告)号：US20070210267A1

公开(公告)日：2007-09-13

申请号：US11710986

申请日：2007-02-27

申请人： Kentaroh Ishii ,  Isamu Ohkubo ,  Akifumi Yamaguchi

发明人： Kentaroh Ishii ,  Isamu Ohkubo ,  Akifumi Yamaguchi

IPC分类号： G01N21/86 ,  G01V8/00

CPC分类号： G01S17/48

摘要： A light receiving device 12 that receives reflected light condensed by a light receiving condenser means 14 has two first and second electrodes 15, 16 provided on a light receiving surface at prescribed intervals along a baseline that connects a light emitting device 11 with the light receiving device and a resistive region 21 provided between the two electrodes. An electric charge generated at the incident position of light incident on the light receiving surface of the light receiving device 12 becomes a photo current and outputted from the first and second electrodes 15, 16 via the resistive region 21. The resistance value of the resistive region 21 of the light receiving device 12 is distributed so as to be roughly inversely proportional to a distance from the optical axis of the light receiving condenser means 14 to the incident position of a light spot on the light receiving surface.

摘要翻译： 接收由受光聚光器装置14会聚的反射光的光接收装置12具有沿着将发光装置11与光接收装置连接的基线以规定间隔设置在受光面上的两个第一和第二电极15,16 以及设置在两个电极之间的电阻区域21。 在入射到光接收装置12的光接收表面的光的入射位置处产生的电荷变成光电流，并且经由电阻区域21从第一和第二电极15,16输出。 光接收装置12的电阻区域21的电阻值被分布成与从光接收电容器14的光轴到光接收表面上的光点的入射位置大致成反比 。

公开(公告)号：US20050116320A1

公开(公告)日：2005-06-02

申请号：US10499357

申请日：2002-12-10

申请人： Shigeki Hayashida ,  Tatsuya Morioka ,  Yoshihiko Tani ,  Isamu Ohkubo ,  Hideo Wada

发明人： Shigeki Hayashida ,  Tatsuya Morioka ,  Yoshihiko Tani ,  Isamu Ohkubo ,  Hideo Wada

IPC分类号： H01L31/0216 ,  H01L31/103 ,  H01L23/58

CPC分类号： H01L31/103 ,  H01L31/02161

摘要： A light receiving device includes a silicon substrate, a first P type diffusion layer on the silicon substrate, and a P type semiconductor layer on the P type diffusion layer. On a surface part of the P type semiconductor layer, two N type diffusion layers as light receiving parts, and a second P type diffusion layer between the two N type diffusion layers are provided. On the P type semiconductor layer, an antireflection film structure composed of a first silicon oxide formed by thermal oxidation and a second silicon oxide formed by CVD is provided. A film thickness of the first silicon oxide is set at about 15 nm, thus a defect in a interface between the first silicon oxide and the P type semiconductor layer is prevented. A film thickness of the second silicon oxide is set at about 100 nm, thus a leak current between cathodes is prevented when a power supply voltage is applied for long period of time.

摘要翻译： 光接收装置包括硅衬底，硅衬底上的第一P型扩散层和P型扩散层上的P型半导体层。 在P型半导体层的表面部分设置有作为光接收部的两个N型扩散层和在两个N型扩散层之间的第二P型扩散层。 在P型半导体层上，提供了由通过热氧化形成的第一氧化硅和通过CVD形成的第二氧化硅构成的抗反射膜结构。 第一氧化硅的膜厚设定为约15nm，因此防止了第一氧化硅与P型半导体层之间的界面的缺陷。 第二氧化硅的膜厚设定为约100nm，因此长时间施加电源电压时，能够防止阴极之间的漏电流。

公开(公告)号：US20060266931A1

公开(公告)日：2006-11-30

申请号：US11499696

申请日：2006-08-07

申请人： Koichi Shichi ,  Isamu Ohkubo

发明人： Koichi Shichi ,  Isamu Ohkubo

IPC分类号： H01J40/14 ,  G01D5/34

CPC分类号： H03M1/301 ,  G01D5/36 ,  H03M1/485

摘要： A photodetector for an optical encoder has plural sets of segmented photodiodes, each set of which is made by two adjoining segmented photodiodes capable of coping with a scale slit having a reference resolution. Output lines of the two adjoining segmented photodiodes are connected together in each set of the photodiodes. These output lines are connected to output lines of the corresponding segmented photodiodes in the other sets. The two adjoining segmented photodiodes function like one segmented photodiode, and thereby, the resolution of the applied scale slit is made ½ of the reference resolution. Thus, this photodetector easily copes with a scale slit having a half resolution of the reference resolution at low cost only by modification of wiring without changing any configuration of the segmented photodiodes.

摘要翻译： 用于光学编码器的光电检测器具有多组分段光电二极管，每组由两个相邻的分段光电二极管制成，能够对准具有参考分辨率的刻度狭缝。 两个相邻的分段光电二极管的输出线在每组光电二极管中连接在一起。 这些输出线连接到其他组中对应的分段光电二极管的输出线。 两个相邻的分段光电二极管的功能类似于一个分段的光电二极管，因此，施加的刻度狭缝的分辨率为参考分辨率的1/2。 因此，该光电检测器仅通过修改布线而容易地处理具有参考分辨率的半分辨率的刻度狭缝，而不改变分段光电二极管的任何配置。

公开(公告)号：US07098489B2

公开(公告)日：2006-08-29

申请号：US10483493

申请日：2002-07-03

申请人： Tatsuya Morioka ,  Shigeki Hayashida ,  Yoshihiko Tani ,  Isamu Ohkubo

发明人： Tatsuya Morioka ,  Shigeki Hayashida ,  Yoshihiko Tani ,  Isamu Ohkubo

IPC分类号： H01L29/205

CPC分类号： H01L31/103

摘要： A plurality of N-type diffusion layers are formed a specified distance apart on a P-type semiconductor layer. A P-type leak prevention layer formed between at least N-type diffusion layers prevents leaking between the diffusion layers. A dielectric film is formed in at least a light incident area on a P-type semiconductor layer including the diffusion layers and the leak prevention layer. Accordingly, provided are a split type light receiving element positively functioning as a split type light receiving element even when charge is accumulated in the dielectric film and having a uniform sensitivity throughout the entire area on a light receiving surface, and a circuit-built-in light receiving element and an optical disk device using the split type light receiving element.

摘要翻译： 多个N型扩散层在P型半导体层上分开规定距离地形成。 形成在至少N型扩散层之间的P型防漏层防止了扩散层之间的泄漏。 在包括扩散层和防漏层的P型半导体层的至少入射光区域中形成介电膜。 因此，即使在电介质膜中积累电荷并且在光接收表面上的整个区域具有均匀的灵敏度的情况下，提供了作为分割型光接收元件的分体式光接收元件，并且电路内置 光接收元件和使用分离式光接收元件的光盘装置。

公开(公告)号：US06949809B2

公开(公告)日：2005-09-27

申请号：US10283323

申请日：2002-10-30

申请人： Takahiro Takimoto ,  Isamu Ohkubo ,  Masaru Kubo ,  Hiroki Nakamura ,  Toshihiko Fukushima ,  Toshifumi Yoshikawa

发明人： Takahiro Takimoto ,  Isamu Ohkubo ,  Masaru Kubo ,  Hiroki Nakamura ,  Toshihiko Fukushima ,  Toshifumi Yoshikawa

IPC分类号： H01L27/14 ,  G01J1/02 ,  G11B7/00 ,  H01L31/00 ,  H01L31/06 ,  H01L31/10 ,  H01L31/103

CPC分类号： H01L31/103 ,  G11B7/13

摘要： A light receiving element, comprising a semiconductor structure comprising at least a first conductivity type semiconductor layer, a first, second conductivity type semiconductor layer provided on the first conductivity type semiconductor layer in the semiconductor structure, a second, second conductivity type semiconductor layer having an impurity concentration lower than that of the first, second conductivity type semiconductor layer, a second, first conductivity type semiconductor layer provided on the second, second conductivity type semiconductor layer, or a second, first conductivity type semiconductor layer provided within the second, second conductivity type semiconductor layer.

摘要翻译： 一种光接收元件，包括半导体结构，该半导体结构至少包括第一导电类型半导体层，设置在半导体结构中的第一导电类型半导体层上的第一，第二导电类型半导体层，第二导电类型半导体层， 杂质浓度低于第一，第二导电类型半导体层，第二导电类型半导体层，设置在第二导电类型半导体层上的第二导电类型半导体层，或第二导电类型半导体层， 型半导体层。