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13 条记录 (耗时 0.015 秒)

    Resin composition and an electronic device using the same
    1.
    发明授权
    Resin composition and an electronic device using the same 有权
    树脂组合物和使用其的电子装置

    公开(公告)号：US06525261B1

    公开(公告)日：2003-02-25

    申请号：US09525122

    申请日：2000-03-14

    申请人： Yuichi Kubota ,  Yukihiro Isobe ,  Akemi Takenouchi ,  Makoto Hosokawa

    发明人： Yuichi Kubota ,  Yukihiro Isobe ,  Akemi Takenouchi ,  Makoto Hosokawa

    IPC分类号： H01L31048

    CPC分类号： H01L31/046 ,  H01L31/03926 ,  H01L31/0465 ,  H01L31/048 ,  Y02E10/50

    摘要： An electronic device, such as a solar cell, having improved moisture, heat, and wear resistance, formed by applying an insulating film over the surfaces of the electronic device utilizing a screen printing process and curing the film with heat. The insulating film is composed of a mixture of two resin components, the first component comprising a polyfunctional blocked isocyanate compound where a dicarbonyl compound is used as a block agent, which dissociates and isocyanate group upon heating, and, a second component comprising a polyol comprising polymers or oligomers having reactive hydroxyl groups which react with isocyante groups to form urethane bonds

    摘要翻译： 通过使用丝网印刷方法在电子器件的表面上施加绝缘膜并用热固化膜而形成的具有改善的耐湿度，耐热性和耐磨性的电​​子器件，例如太阳能电池。 绝缘膜由两种树脂组分的混合物组成，第一组分包含多官能封端异氰酸酯化合物，其中二羰基化合物用作嵌段剂，其在加热时分解和异氰酸酯基团，第二组分包含多元醇，其包含 具有与异氰酸酯基团反应形成氨基甲酸酯键的具有反应性羟基的聚合物或低聚物

    Cylinder-bed type sewing machine
    4.
    发明授权
    Cylinder-bed type sewing machine 失效
    气缸式缝纫机

    公开(公告)号：US5458073A

    公开(公告)日：1995-10-17

    申请号：US283501

    申请日：1994-08-01

    申请人： Shuichi Harada ,  Makoto Hosokawa

    发明人： Shuichi Harada ,  Makoto Hosokawa

    IPC分类号： D05B27/02 ,  D05B27/08 ,  D05B55/06 ,  D05B27/00

    CPC分类号： D05B55/06 ,  D05B27/02 ,  D05B27/08

    摘要： In the cylinder-bed type sewing machine of the invention, a cylinder unit is provided. A feed base support, a feed base, and a feed dog which are disposed in the cylinder unit are reciprocally rotated in vertical and lengthwise directions in accordance with movements of a feed lifting rock shaft and a feed lengthwise shaft. The vertical and lengthwise reciprocal movements of the feed base are synthesized so that the feed dog is moved along an arcuate feeding locus. According to the cylinder-bed type sewing machine of the present invention, the peripheral length of the cylinder unit for holding a tubular sewing product which is fitted onto the cylinder unit, and the distance between a throat plate and the left end of the cylinder unit can be reduced as much as possible, and the feed dog can be moved along the arcuate locus. Therefore, a predetermined feeding operation on the sewing product can be conducted surely and smoothly.

    摘要翻译： 在本发明的圆筒型缝纫机中，设有气缸单元。 根据进给提升岩石轴和进给纵向轴的移动，设置在气缸单元中的进给基座支撑件，进给基座和进给杆在纵向和纵向方向上往复运动。 进给基座的垂直和纵向往复运动被合成，使得进给爪沿弓形进给轨迹移动。 根据本发明的圆筒型缝纫机，用于保持装配到气缸单元上的管状缝合产品的气缸单元的周长以及气缸单元的喉部和左端之间的距离 可以尽可能地减少，并且饲养狗可以沿着弓形轨迹移动。 因此，能够可靠且平稳地进行对缝制品的规定的供给动作。

    Crystallized polycrystalline semiconductor device
    6.
    发明授权
    Crystallized polycrystalline semiconductor device 失效
    结晶多晶半导体器件

    公开(公告)号：US5192991A

    公开(公告)日：1993-03-09

    申请号：US764324

    申请日：1991-09-24

    申请人： Makoto Hosokawa

    发明人： Makoto Hosokawa

    IPC分类号： G01N25/16 ,  H01L21/324 ,  H01L31/04 ,  H01L31/18 ,  H01L31/20

    CPC分类号： H01L21/324 ,  H01L31/186 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

    摘要： A polycrystalline semiconductor device and a method of manufacturing the device are disclosed. An amorphous semiconductor film is deposited on a glass substrate and given thermal treatment at a crystallization temperature of 600.degree. C. or lower to form a polycrystalline photoconductive strucutre. The substrate is made from a material having the property of contracting at a percentage different than the semiconductor film by 10% or less, the contraction being caused by the thermal treatment.

    摘要翻译： 公开了一种多晶半导体器件及其制造方法。 将非晶半导体膜沉积在玻璃基板上，并在600℃或更低的结晶温度下进行热处理以形成多晶光导体结构。 基板由具有以与半导体膜不同的百分比收缩的性质的材料制成10％以下，由热处理引起的收缩。

    Regulator circuit and semiconductor device therewith
    7.
    发明申请
    Regulator circuit and semiconductor device therewith 审中-公开
    调节器电路及其半导体器件

    公开(公告)号：US20070145484A1

    公开(公告)日：2007-06-28

    申请号：US11591479

    申请日：2006-11-02

    申请人： Makoto Hosokawa ,  Toshihiko Fukushima ,  Naoki Fukunaga

    发明人： Makoto Hosokawa ,  Toshihiko Fukushima ,  Naoki Fukunaga

    IPC分类号： H01L23/62

    CPC分类号： H01L27/0259

    摘要： A regulator circuit including an output-stage transistor for supplying a current to an external circuit has an electrostatic protection transistor formed in parallel with the output-stage transistor. The base of the electrostatic protection transistor is connected to, for example, the base of the output-stage transistor, or alternatively to a ground line or to the emitter of the electrostatic protection transistor itself.

    摘要翻译： 包括用于向外部电路提供电流的输出级晶体管的调节器电路具有与输出级晶体管并联形成的静电保护晶体管。 静电保护晶体管的基极连接到例如输出级晶体管的基极，或者替代地连接到静电保护晶体管本身的接地线或发射极。

    Light sensitive element and light sensitive element having internal circuitry
    9.
    发明授权
    Light sensitive element and light sensitive element having internal circuitry 有权
    具有内部电路的光敏元件和光敏元件

    公开(公告)号：US06404029B1

    公开(公告)日：2002-06-11

    申请号：US09656461

    申请日：2000-09-06

    申请人： Makoto Hosokawa ,  Naoki Fukunaga ,  Takahiro Takimoto ,  Masaru Kubo ,  Toshihiko Fukushima ,  Isamu Ohkubo

    发明人： Makoto Hosokawa ,  Naoki Fukunaga ,  Takahiro Takimoto ,  Masaru Kubo ,  Toshihiko Fukushima ,  Isamu Ohkubo

    IPC分类号： H01L2714

    CPC分类号： H01L27/1443 ,  H01L31/0352

    摘要： A photosensitive device includes a semiconductor substrate and a first semiconductor layer, both of a first conductivity type, with the semiconductor layer being formed on the semiconductor substrate and having a lower impurity concentration than that of the semiconductor substrate. A second semiconductor layer, of a second conductivity type, is formed on the first semiconductor layer and at least one diffusion layer of the first conductivity type is formed from the surface of the second semiconductor layer so as to reach the surface of the first semiconductor layer. The diffusion layer subdivides the second semiconductor layer into a plurality of semiconductor regions At least one photodiode portion for converting signal light into an electrical signal is formed at a junction between at least one of the plurality of semiconductor regions and the first semiconductor layer. A depletion layer which is formed in the first semiconductor layer when a reverse bias voltage is applied to the at least one photodiode portion has a field intensity of about 0.3 V/&mgr;m or more.

    摘要翻译： 光敏器件包括半导体衬底和第一半导体层，它们都是第一导电型，半导体层形成在半导体衬底上，杂质浓度低于半导体衬底的半导体层。 第二导电类型的第二半导体层形成在第一半导体层上，并且从第二半导体层的表面形成至少一个第一导电类型的扩散层，以到达第一半导体层的表面 。 扩散层将第二半导体层细分为多个半导体区域在多个半导体区域和第一半导体层中的至少一个之间的接合处形成至少一个用于将信号光转换成电信号的光电二极管部分。 当向至少一个光电二极管部分施加反向偏置电压时，在第一半导体层中形成的耗尽层具有约0.3V / m 2以上的场强度。

    Photosensitive device with internal circuitry that includes on the same substrate
    10.
    发明授权
    Photosensitive device with internal circuitry that includes on the same substrate 失效
    具有包含在同一基板上的内部电路的感光装置

    公开(公告)号：US06380603B1

    公开(公告)日：2002-04-30

    申请号：US09707158

    申请日：2000-11-07

    申请人： Takahiro Takimoto ,  Toshihiko Fukushima ,  Isamu Ohkubo ,  Makoto Hosokawa ,  Masaru Kubo

    发明人： Takahiro Takimoto ,  Toshihiko Fukushima ,  Isamu Ohkubo ,  Makoto Hosokawa ,  Masaru Kubo

    IPC分类号： H01L3106

    CPC分类号： H01L31/02024 ,  H01L27/144

    摘要： A semiconductor device includes: a photosensitive section essentially composed of a PN junction between a semiconductor multilayer structure of the first conductivity type and a first semiconductor layer of the second conductivity type; and a partitioning portion for splitting the photosensitive section into a plurality of regions. The semiconductor multilayer structure of the first conductivity type includes: a semiconductor substrate of the first conductivity type; a first semiconductor layer of the first conductivity type; and a second semiconductor layer of the first conductivity type. The partitioning portion includes a third semiconductor layer of the first conductivity type extending from the first semiconductor layer of the second conductivity type so as to reach the second semiconductor layer of the first conductivity type.

    摘要翻译： 半导体器件包括：基本上由第一导电类型的半导体多层结构和第二导电类型的第一半导体层之间的PN结组成的感光部分; 以及用于将感光部分分成多个区域的分隔部分。 第一导电类型的半导体多层结构包括：第一导电类型的半导体衬底; 第一导电类型的第一半导体层; 和第一导电类型的第二半导体层。 分隔部分包括从第二导电类型的第一半导体层延伸的第一导电类型的第三半导体层，以到达第一导电类型的第二半导体层。