摘要:
A layout for placing a circuit having a plurality of transistors in a small-width region. A search section inputs data on a circuit and searches for a set of routes formed so that passage through a transistor occurs only one time and so that the combination of routes covers the entire circuit network. An extraction section extracts a set of routes having the smallest number of routes. A width determination section determines the layout width from source and drain electrodes, the region between the source and drain electrodes, the region between adjacent pairs of the transistors not combined into a common electrode, the number of transistors, and the smallest number of routes. A layout determination section forms a layout in which the source, drain and gate electrodes of the transistor included in the circuit are placed in a small-width region.
摘要:
A layout capable of placing a circuit constituted by a plurality of transistors in a small-with region is automatically formed. A search section inputs data on a circuit and makes a search for a set of routes formed so that passage through any one of the transistors occurs only one time and so that the combination of routes in one set can cover the entire circuit network. An extraction section extracts a set of routes having the smallest number of routes in sets of route found by searching. A width determination section determines the layout width from the widths of source and drain electrodes of each transistor, the width of the region between the source and drain electrodes, the width of the region between some of the adjacent pairs of the transistors not combined into a common electrode, the number of transistors, and the smallest number of routes. A layout determination section forms information on a layout in which all the source, drain and gate electrodes of the transistor included in the circuit are placed in a small-width region having the determined width.
摘要:
The present invention relates to a semiconductor device in which a power supply circuit is disposed on an array substrate, which achieves reduction of the size by suppressing an increase of the area occupied by the power supply wiring. The feature of the present invention is that a power supply circuit is disposed adjacent to a supply voltage input terminal and a signal line driving circuit. An extremely large amount of electric current is flown in a power supply wiring between the power supply circuit and the supply voltage input terminal and a power supply wiring between the power supply circuit and the signal line driving circuit. Thus, by disposing the power supply circuit adjacent to the supply voltage input terminal and the signal line driving circuit, the power supply wirings therebetween can be shortened. Accordingly, the wiring resistance proportional to the product of the length and the width becomes small so that the thinned power supply wiring can be tolerated. As a result, the power supply wirings can be shortened and thinned so that the wiring area can be decreased.
摘要:
A color image display device is provided which is capable of displaying an image with no differences in color balance between end portions and inner portions of anon-rectangle image display region. The color image display device includes an end portion unit pixel formed in an edge portion of a display region in which a color image is displayed and including end portion sub-pixels which correspond to a plurality of kinds of primary colors respectively in a one-to-one relationship and an inner unit pixel formed in an inside of the display region with respect to the end portion unit pixels and including inner sub-pixels which correspond to the plurality of kinds of primary colors respectively in a one-to-one relationship. With such a configuration, a relative area proportion of the end portion sub-pixels that correspond to the primary colors respectively in a one-to-one relationship is set equal to that of the inner sub-pixels that correspond to the primary colors respectively in a one-to-one relationship. The plurality of kinds of the end portion sub-pixels is arrayed in accordance with a position or a shape on an outer edge of the display region, an array direction of the plurality of kinds of the end portion sub-pixels and an array direction of the plurality of kinds of the inner sub-pixels configured to intersect each other.
摘要:
A layout capable of placing a circuit constituted by a plurality of transistors in a small-with region is automatically formed. A search section inputs data on a circuit and makes a search for a set of routes formed so that passage through any one of the transistors occurs only one time and so that the combination of routes in one set can cover the entire circuit network. An extraction section extracts a set of routes having the smallest number of routes in sets of route found by searching. A width determination section determines the layout width from the widths of source and drain electrodes of each transistor, the width of the region between the source and drain electrodes, the width of the region between some of the adjacent pairs of the transistors not combined into a common electrode, the number of transistors, and the smallest number of routes. A layout determination section forms information on a layout in which all the source, drain and gate electrodes of the transistor included in the circuit are placed in a small-width region having the determined width.
摘要:
A device excellent in electrical characteristics is provided by suppressing an operation failure owing to a hysteresis effect that occurs in a circuit using MOS transistors having floating bodies. Moreover, sensitivity of a sense amplifier circuit and a latch circuit including these MOS transistors as components is improved. A signal required in a circuit other than a first circuit is outputted by using electrical characteristics of MOS transistors in a first period (effective period), and in a second period (idle period) excluding the first period, between the gate and source of MOS transistors, a step waveform voltage not less than threshold voltages of these MOS transistors is given.