摘要:
A device excellent in electrical characteristics is provided by suppressing an operation failure owing to a hysteresis effect that occurs in a circuit using MOS transistors having floating bodies. Moreover, sensitivity of a sense amplifier circuit and a latch circuit including these MOS transistors as components is improved. A signal required in a circuit other than a first circuit is outputted by using electrical characteristics of MOS transistors in a first period (effective period), and in a second period (idle period) excluding the first period, between the gate and source of MOS transistors, a step waveform voltage not less than threshold voltages of these MOS transistors is given.
摘要:
A color image display device is provided which is capable of displaying an image with no differences in color balance between end portions and inner portions of anon-rectangle image display region. The color image display device includes an end portion unit pixel formed in an edge portion of a display region in which a color image is displayed and including end portion sub-pixels which correspond to a plurality of kinds of primary colors respectively in a one-to-one relationship and an inner unit pixel formed in an inside of the display region with respect to the end portion unit pixels and including inner sub-pixels which correspond to the plurality of kinds of primary colors respectively in a one-to-one relationship. With such a configuration, a relative area proportion of the end portion sub-pixels that correspond to the primary colors respectively in a one-to-one relationship is set equal to that of the inner sub-pixels that correspond to the primary colors respectively in a one-to-one relationship. The plurality of kinds of the end portion sub-pixels is arrayed in accordance with a position or a shape on an outer edge of the display region, an array direction of the plurality of kinds of the end portion sub-pixels and an array direction of the plurality of kinds of the inner sub-pixels configured to intersect each other.
摘要:
The present invention relates to a semiconductor device in which a power supply circuit is disposed on an array substrate, which achieves reduction of the size by suppressing an increase of the area occupied by the power supply wiring. The feature of the present invention is that a power supply circuit is disposed adjacent to a supply voltage input terminal and a signal line driving circuit. An extremely large amount of electric current is flown in a power supply wiring between the power supply circuit and the supply voltage input terminal and a power supply wiring between the power supply circuit and the signal line driving circuit. Thus, by disposing the power supply circuit adjacent to the supply voltage input terminal and the signal line driving circuit, the power supply wirings therebetween can be shortened. Accordingly, the wiring resistance proportional to the product of the length and the width becomes small so that the thinned power supply wiring can be tolerated. As a result, the power supply wirings can be shortened and thinned so that the wiring area can be decreased.
摘要:
A power supply circuit is provided which is capable of preventing a drop in an output voltage of the power supply circuit used as a DC/DC converter made up of single and conductive type (n-type or p-type) MOS transistors and of improving efficiency. Since a control voltage having an amplitude [2×VDD] is applied from a level shift circuit to a charge-pump circuit, even when potentials at nodes becomes a level [2×VDD], pMOS transistors are kept in an OFF state, thereby preventing leakage of currents from pMOS transistors. This avoids a drop in an DC output voltage. As inputs to the level shift circuits, potentials at nodes of the charge-pump circuit are used and, therefore, even if potentials at nodes of the level shift circuits are high, pMOS transistors are kept in an OFF state.
摘要:
To accurately decrease the gap depth between an upper pole layer and a lower pole layer and the front-end portion width of the upper pole layer. A thin-film magnetic head of the present invention is constituted by forming a lower shielding layer, a read gap layer holding an MR magnetosensitive element, a common pole layer, and a write gap layer in order on an insulating substrate, forming a first flattening layer, a coil pattern layer, and a second flattening layer laminated in order on the write gap layer excluding the vicinity of an ABS plane, and forming an upper pole layer on the write gap layer and the second flattening layer nearby an ABS plane. Moreover, a concave portion is formed on the common pole layer at a position separated from the ABS plane, the concave portion is filled with a nonmagnetic body, and the gap depth between the upper pole layer and the common pole layer is determined by the concave portion.
摘要:
To accurately decrease the gap depth between an upper pole layer and a lower pole layer and the front-end portion width of the upper pole layer.A thin-film magnetic head of the present invention is constituted by forming a lower shielding layer, a read gap layer holding an MR magnetosensitive element, a common pole layer, and a write gap layer in order on an insulating substrate, forming a first flattening layer, a coil pattern layer, and a second flattening layer laminated in order on the write gap layer excluding the vicinity of an ABS plane, and forming an upper pole layer on the write gap layer and the second flattening layer nearby an ABS plane. Moreover, a concave portion is formed on the common pole layer at a position separated from the ABS plane, the concave portion is filled with a nonmagnetic body, and the gap depth between the upper pole layer and the common pole layer is determined by the concave portion.
摘要:
A bootstrap circuit includes an output transistor, a bootstrap capacitor provided between the gate and source of the output transistor, a power source, and a circuit that performs ON/OFF control of a supply from the power source to the gate electrode of the transistor. An initial voltage before a bootstrap effect can be set to the potential of the power source, which is independent of the threshold voltage of the transistor. Therefore, the source output of the transistor rising or dropping due to the bootstrap effect is not affected by variations that depend on the threshold voltage of the transistor.
摘要:
By inserting a first antistripping layer comprising a first non-magnetic layer 22 and a first conductive layer 23 between a first magnetic layer 16 and a magnetic separation layer 13, adhesion between the first conductive layer 23 and the magnetic separation layer 13 is improved to prevent the first magnetic layer 16 from stripping. In addition, by inserting a second antistripping layer comprising a second non-magnetic layer 24 and a second conductive layer 25 between a second magnetic layer 21 and a magnetic gap layer 17, adhesion between the second conductive layer 24 and the magnetic gap layer 17 is improved to prevent the second magnetic layer 25 from stripping.
摘要:
In a step-up apparatus, a first level shift circuit receives a first clock signal to generate two phase-opposite second clock signals, and a second level shift circuit receives the first clock signal to generate two phase-opposite third clock signals. A charge pump circuit steps up a power supply voltage at a power supply voltage terminal using the second clock signals to generate a positive voltage, and a polarity inverting circuit inverts the positive voltage using the third clock signals to generate a negative voltage whose absolute value is the same as the positive voltage. A high level of the second clock signals is not higher than the positive voltage, and a low level of the second clock signals is not lower than a voltage at a ground terminal. A high level of the third clock signals is not higher than the power supply voltage, and a low level of the third clock signals is not lower than the negative voltage.
摘要:
A bootstrap circuit comprises: a first transistor connecting a first power supply with an output node; and a second transistor applying a first input signal to a gate node of the first transistor and having a conductivity type identical to that of the first transistor. A second input signal obtained by inverting a level of the first input signal, delaying the inverted signal, and adding a direct current bias to the delayed signal is inputted to a gate node of the second transistor.