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公开(公告)号:US06933189B2
公开(公告)日:2005-08-23
申请号:US10870382
申请日:2004-06-16
IPC分类号: H01L21/285 , H01L21/30 , H01L21/306 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L21/8232 , H01L21/8234 , H01L29/49 , H01L29/76 , H01L29/78 , H01L29/84 , H01L31/062 , H01L31/107 , H01L31/113 , H01L31/119
CPC分类号: H01L29/4983 , H01L21/28194 , H01L21/28518 , H01L21/28568 , H01L21/3003 , H01L21/76823 , H01L21/76895 , H01L29/517 , H01L29/7833
摘要: A method and structure for a transistor device comprises forming a source, drain, and trench region in a substrate, forming a first insulator over the substrate, forming a gate electrode above the first insulator, forming a pair of insulating spacers adjoining the electrode, converting a portion of the first insulator into a metallic film, converting the metallic film into one of a silicide and a salicide film, forming an interconnect region above the trench region, forming an etch stop layer above the first insulator, the trench region, the gate electrode, and the pair of insulating spacers, forming a second insulator above the etch stop layer, and forming contacts in the second insulator. The first insulator comprises a metal oxide material, which comprises one of a HfOx and a ZrOx.
摘要翻译: 晶体管器件的方法和结构包括在衬底中形成源极,漏极和沟槽区域,在衬底上形成第一绝缘体,在第一绝缘体之上形成栅电极,形成邻接电极的一对绝缘衬垫,转换 将所述第一绝缘体的一部分转变为金属膜,将所述金属膜转化成硅化物和自对隔硅膜之一,在所述沟槽区上方形成互连区,在所述第一绝缘体上方形成蚀刻停止层,所述沟槽区,所述栅 电极和一对绝缘间隔物,在蚀刻停止层上方形成第二绝缘体,并在第二绝缘体中形成接触。 第一绝缘体包括金属氧化物材料,其包括HfO x x和ZrO x x之一。