Method of manufacturing mask for deposition
    31.
    发明授权
    Method of manufacturing mask for deposition 有权
    制造掩模掩模的方法

    公开(公告)号:US09543520B1

    公开(公告)日:2017-01-10

    申请号:US15096820

    申请日:2016-04-12

    CPC分类号: H01L21/0273 H01L51/0011

    摘要: A manufacturing method of a mask for deposition including forming a second layer on a side of a first layer, coating a photoresist layer on a side of the second layer, forming a plurality of photoresist patterns which penetrate the photoresist layer according to an exposing and developing process, forming a plurality of pattern grooves in the second layer by etching portions of the second layer, which are exposed through the plurality of photoresist patterns, forming an electro-forming mold by removing the photoresist layer from the second layer, disposing an electrode plate to contact the second layer of the electro-forming mold, performing an electro-forming process of growing a metal layer from the electrode plate in spaces in the corresponding pattern grooves of the second layer of the electro-forming mold, to form a deposition mask, and separating the deposition mask from the electrode plate.

    摘要翻译: 一种用于沉积的掩模的制造方法,包括在第一层的侧面上形成第二层,在第二层的一侧涂覆光致抗蚀剂层,根据曝光和显影形成多个光致抗蚀剂图案,其穿透光致抗蚀剂层 处理,通过蚀刻通过多个光致抗蚀剂图案曝光的第二层的部分,在第二层中形成多个图案凹槽,通过从第二层去除光致抗蚀剂层形成电铸模,将电极板 接触电铸成型模具的第二层,进行在电铸模具的第二层的相应图案槽中的空间中从电极板生长金属层的电铸工艺,以形成沉积掩模 ,并将沉积掩模与电极板分离。

    ETCHANT COMPOSITION AND METHODS OF FABRICATING METAL WIRING AND THIN FILM TRANSISTOR SUBSTRATE USING THE SAME
    32.
    发明申请
    ETCHANT COMPOSITION AND METHODS OF FABRICATING METAL WIRING AND THIN FILM TRANSISTOR SUBSTRATE USING THE SAME 有权
    使用其制造金属接线和薄膜晶体管基板的蚀刻组合物和方法

    公开(公告)号:US20150087148A1

    公开(公告)日:2015-03-26

    申请号:US14263956

    申请日:2014-04-28

    IPC分类号: H01L21/306 C23F1/18

    摘要: An etchant composition including 0.5 wt % to 20 wt % of a persulfate, 0.01 wt % to 1 wt % of a fluorine compound, 1 wt % to 10 wt % of an inorganic acid, 0.01 wt % to 2 wt % of an azole-based compound, 0.1 wt % to 5 wt % of a chlorine compound, 0.05 wt % to 3 wt % of a copper salt, 0.01 wt % to 5 wt % of an antioxidant or a salt thereof, based on a total weight of the etchant composition, and water in an amount sufficient for the total weight of the etchant composition to be equal to 100 wt % is disclosed. The etchant composition is suitable for use in forming a metal wiring by etching a metal layer including copper or in fabricating a thin film transistor substrate for a display apparatus.

    摘要翻译: 包含0.5重量%至20重量%的过硫酸盐,0.01重量%至1重量%的氟化合物,1重量%至10重量%的无机酸,0.01重量%至2重量%的唑类, 0.1重量%至5重量%的氯化合物,0.05重量%至3重量%的铜盐,0.01重量%至5重量%的抗氧化剂或其盐,基于蚀刻剂的总重量 组合物和水的量足以使蚀刻剂组合物的总重量等于100重量%。 蚀刻剂组合物适用于通过蚀刻包括铜的金属层或制造用于显示装置的薄膜晶体管基板来形成金属布线。