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    MAGNETORESISTIVE SENSOR WITH STOP-LAYERS
    31.
    发明申请
    MAGNETORESISTIVE SENSOR WITH STOP-LAYERS 有权
    具有停止层的磁传感器

    公开(公告)号：US20160293186A9

    公开(公告)日：2016-10-06

    申请号：US14309012

    申请日：2014-06-19

    Applicant: Seagate Technology LLC

    Inventor： Carolyn Pitcher Van Dorn ,  Thomas Roy Boonstra ,  Eric Walter Singleton ,  Shaun Eric McKinlay

    IPC: G11B5/39

    CPC classification number: G11B5/39 ,  G11B5/11 ,  G11B5/112 ,  G11B5/3169 ,  G11B5/3912 ,  G11B5/40 ,  Y10T428/1121 ,  Y10T428/1164

    Abstract: Tolerances for manufacturing reader structures for transducer heads continue to grow smaller and storage density in corresponding storage media increases. Reader stop layers may be utilized during manufacturing of reader structures to protect various layers of the reader structure from recession and/or scratches while processing other non-protected layers of the reader structure. For example, the stop layer may have a very low polish rate during mechanical or chemical-mechanical polishing. Surrounding areas may be significantly polished while a structure protected by a stop layer with a very low polish rate is substantially unaffected. The stop layer may then be removed via etching, for example, after the mechanical or chemical-mechanical polishing is completed.

    Abstract translation: 用于传感器头的制造读取器结构的公差继续增长，并且相应的存储介质中的存储密度增加。 在读取器结构的制造期间可以利用读取器停止层来保护读取器结构的各个层免于衰退和/或划伤，同时处理读取器结构的其它未受保护的层。 例如，在机械或化学机械抛光期间，停止层可能具有非常低的抛光速率。 可以显着地抛光周围区域，而由具有非常低的抛光速率的停止层保护的结构基本上不受影响。 然后可以例如在机械或化学机械抛光完成之后通过蚀刻去除停止层。

    Spin transport sensor
    32.
    发明授权
    Spin transport sensor 有权
    旋转运输传感器

    公开(公告)号：US09087535B2

    公开(公告)日：2015-07-21

    申请号：US14069015

    申请日：2013-10-31

    Applicant: Seagate Technology LLC

    Inventor： Eric Walter Singleton ,  Zhiguo Ge

    IPC: G11B5/33 ,  G11B5/39

    CPC classification number: G11B5/3906 ,  G01R33/091 ,  G01R33/1284 ,  G11B5/3163 ,  G11B5/33 ,  G11B5/3912 ,  G11B5/3929 ,  G11B5/3932 ,  G11B5/3938 ,  G11B5/398

    Abstract: The implementations disclosed herein provide for a spin transport sensor including a synthetic antiferromagnet (SAF) adjacent a shield element. The SAF extends to an air-bearing surface (ABS) and provides a current path from a current source to an ABS-region of a spin conductor layer. Spin current diffuses from the spin conductor layer to an adjacent free layer, which generates a measurable electrical voltage in a free layer of the spin transport sensor. The SAF serves as both a magnetic shield and a spin injector to the spin conductor layer.

    Abstract translation: 本文公开的实施方案提供了一种自旋传输传感器，其包括邻近屏蔽元件的合成反铁磁体（SAF）。 SAF延伸到空气轴承表面（ABS），并提供从电流源到自旋导体层的ABS区域的电流路径。 旋转电流从自旋导体层扩散到相邻的自由层，其在自旋传输传感器的自由层中产生可测量的电压。 SAF用作磁屏蔽和自旋注入器到纺丝导体层。

    MAGNETORESISTIVE SENSOR WITH STOP-LAYERS
    36.
    发明申请
    MAGNETORESISTIVE SENSOR WITH STOP-LAYERS 有权
    具有停止层的磁传感器

    公开(公告)号：US20140302345A1

    公开(公告)日：2014-10-09

    申请号：US14309012

    申请日：2014-06-19

    Applicant: Seagate Technology LLC

    Inventor： Carolyn Pitcher Van Dorn ,  Thomas Roy Boonstra ,  Eric Walter Singleton ,  Shaun Eric McKinlay

    IPC: G11B5/39

    CPC classification number: G11B5/39 ,  G11B5/11 ,  G11B5/112 ,  G11B5/3169 ,  G11B5/3912 ,  G11B5/40 ,  Y10T428/1121 ,  Y10T428/1164

    Abstract: Tolerances for manufacturing reader structures for transducer heads continue to grow smaller and storage density in corresponding storage media increases. Reader stop layers may be utilized during manufacturing of reader structures to protect various layers of the reader structure from recession and/or scratches while processing other non-protected layers of the reader structure. For example, the stop layer may have a very low polish rate during mechanical or chemical-mechanical polishing. Surrounding areas may be significantly polished while a structure protected by a stop layer with a very low polish rate is substantially unaffected. The stop layer may then be removed via etching, for example, after the mechanical or chemical-mechanical polishing is completed.

    Abstract translation: 用于传感器头的制造读取器结构的公差继续增长，并且相应的存储介质中的存储密度增加。 在读取器结构的制造期间可以利用读取器停止层来保护读取器结构的各个层免于衰退和/或划伤，同时处理读取器结构的其它未受保护的层。 例如，在机械或化学机械抛光期间，停止层可能具有非常低的抛光速率。 可以显着地抛光周围区域，而由具有非常低的抛光速率的停止层保护的结构基本上不受影响。 然后可以例如在机械或化学机械抛光完成之后通过蚀刻去除停止层。

    BOTTOM SHIELD STABILIZED MAGNETIC SEED LAYER
    37.
    发明申请
    BOTTOM SHIELD STABILIZED MAGNETIC SEED LAYER 审中-公开
    底部屏蔽稳定磁性层

    公开(公告)号：US20140268417A1

    公开(公告)日：2014-09-18

    申请号：US13844813

    申请日：2013-03-16

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Eric Walter Singleton ,  Liwen Tan ,  Jae-Young Yi

    IPC: G11B5/115

    CPC classification number: G11B5/3116 ,  G11B5/115 ,  G11B5/3163 ,  G11B5/3912 ,  G11B5/398 ,  G11B2005/3996 ,  Y10T156/10

    Abstract: A data reader generally capable of sensing data bits may be configured at least with a magnetic stack that has free and fixed magnetization structures atop a magnetic seed layer. A bottom shield may be positioned contactingly adjacent the magnetic stack opposite a top shield with the bottom shield having a fixed pinning magnetization set to a predetermined magnetic orientation.

    Abstract translation: 通常能够感测数据位的数据读取器可以至少配置在磁性种子层顶部具有自由和固定的磁化结构的磁性堆栈。 底部屏蔽件可以与顶部屏蔽件相对的磁性堆叠接触地定位，底部屏蔽件具有固定的钉扎磁化强度，设定为预定的磁性取向。

    SIDE SHIELD PEDESTAL FOR DATA READERS
    38.
    发明申请
    SIDE SHIELD PEDESTAL FOR DATA READERS 有权
    数据读取器的侧面保护套

    公开(公告)号：US20140218825A1

    公开(公告)日：2014-08-07

    申请号：US13757375

    申请日：2013-02-01

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Victor Boris Sapozhnikov ,  Mohammed Shariat Ullah Patwari ,  Shaun Eric McKinlay ,  Eric Walter Singleton

    IPC: G11B5/11

    CPC classification number: G11B5/11 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3912 ,  G11B5/398

    Abstract: Various embodiments may be generally directed to a magnetic element capable of reading magnetic data bits. Such a magnetic element may have at least a magnetic stack laterally adjacent a side shield and non-magnetic pedestal on an air bearing surface (ABS). The non-magnetic pedestal can be configured to have a greater stripe height from the ABS than the side shield.

    Abstract translation: 各种实施例可以通常涉及能够读取磁数据位的磁性元件。 这种磁性元件可以至少具有横向邻近空气轴承表面（ABS）上的侧屏蔽和非磁性基座的磁性堆叠。 非磁性基座可以配置为具有比侧屏更大的ABS高度的条形高度。

    Shield Stabilization Configuration with Applied Bias
    40.
    发明申请
    Shield Stabilization Configuration with Applied Bias 审中-公开
    屏蔽稳定配置与应用偏置

    公开(公告)号：US20140104729A1

    公开(公告)日：2014-04-17

    申请号：US14109184

    申请日：2013-12-17

    Applicant: Seagate Technology LLC

    Inventor： Eric Walter Singleton ,  Junjie Quan ,  Jae-Young Yi

    IPC: G11B5/11

    CPC classification number: G11B5/11 ,  C22F1/00 ,  G01R33/093 ,  G11B5/3912 ,  G11B5/398 ,  H01L43/08 ,  H01L43/12

    Abstract: An apparatus includes a sensor stack, first and second shields positioned on opposite sides of the sensor stack, and a first shield stabilization structure adjacent to the first shield and applying a bias magnetic field to the first shield. A second shield stabilization structure can be positioned adjacent to the second shield.

    Abstract translation: 一种装置包括传感器堆叠，位于传感器堆叠的相对侧上的第一和第二屏蔽件以及与第一屏蔽件相邻并且向第一屏蔽件施加偏置磁场的第一屏蔽稳定结构。 第二屏蔽稳定结构可以被定位成与第二屏蔽相邻。

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