公开(公告)号：US10763373B2

公开(公告)日：2020-09-01

申请号：US16367329

申请日：2019-03-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yutaka Okazaki ,  Akihisa Shimomura ,  Naoto Yamade ,  Tomoya Takeshita ,  Tetsuhiro Tanaka

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/45 ,  H01L29/49 ,  H01L27/12

Abstract: A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.

公开(公告)号：US10411003B2

公开(公告)日：2019-09-10

申请号：US15725519

申请日：2017-10-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Naoki Okuno ,  Kosei Nei ,  Hiroaki Honda ,  Naoto Yamade ,  Hiroshi Fujiki

IPC: H01L27/02 ,  H01L27/11519 ,  H01L27/11565 ,  H01L29/786 ,  H01L27/11521

Abstract: A transistor includes a first insulator over a substrate; a first oxide thereover; a second oxide in contact with at least part of the top surface of the first oxide; a first conductor and a second conductor each in contact with at least part of the top surface of the second oxide; a third oxide that is over the first conductor and the second conductor and is in contact with at least part of the top surface of the second oxide; a second insulator thereover; a third conductor which is over the second insulator and at least part of which overlaps with a region between the first conductor and the second conductor; and a third insulator which is over the third conductor and at least part of which is in contact with the top surface of the first insulator. The thickness of a region of the first insulator that is in contact with the third insulator is less than the thickness of a region of the first insulator that is in contact with the first oxide.

公开(公告)号：US10096489B2

公开(公告)日：2018-10-09

申请号：US14635324

申请日：2015-03-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Suguru Hondo ,  Naoto Yamade

IPC: H01L21/425 ,  H01L21/465 ,  H01L29/786 ,  H01L29/66

Abstract: Provided is a method for manufacturing a semiconductor device with favorable electrical characteristics. The following steps are performed in the following order: forming an oxide semiconductor film over a substrate having a substantially planar surface; selectively etching the oxide semiconductor film to form an oxide semiconductor layer; implanting an oxygen ion on a top surface of the oxide semiconductor layer and a side surface of the oxide semiconductor layer in a cross-section perpendicular to the substantially planar surface in a channel width direction of the oxide semiconductor layer from an angle 0°

公开(公告)号：US09960280B2

公开(公告)日：2018-05-01

申请号：US14574904

申请日：2014-12-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuichi Sato ,  Naoto Yamade

IPC: H01L29/10 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/78603

Abstract: A transistor with stable electric characteristics is provided. An aluminum oxide film containing boron is formed in order to prevent hydrogen from diffusing into an oxide semiconductor film.

公开(公告)号：US08772094B2

公开(公告)日：2014-07-08

申请号：US13681895

申请日：2012-11-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Naoto Yamade ,  Junichi Koezuka ,  Shunpei Yamazaki

IPC: H01L21/00

CPC classification number: H01L29/66477 ,  H01L29/66969 ,  H01L29/7869

Abstract: A highly reliable semiconductor device that includes a transistor including an oxide semiconductor is provided. In a manufacturing process of a semiconductor device that includes a bottom-gate transistor including an oxide semiconductor, an insulating film which is in contact with an oxide semiconductor film is subjected to dehydration or dehydrogenation treatment by heat treatment and oxygen doping treatment in this order. The insulating film which is in contact with the oxide semiconductor film refers to a gate insulating film provided under the oxide semiconductor film and an insulating film which is provided over the oxide semiconductor film and functions as a protective insulating film. The gate insulating film and/or the insulating film are/is subjected to dehydration or dehydrogenation treatment by heat treatment and oxygen doping treatment in this order.

Abstract translation: 提供了包括具有氧化物半导体的晶体管的高度可靠的半导体器件。 在包括具有氧化物半导体的底栅晶体管的半导体器件的制造工艺中，通过热处理和氧掺杂处理依次进行与氧化物半导体膜接触的绝缘膜的脱水或脱氢处理。 与氧化物半导体膜接触的绝缘膜是指设置在氧化物半导体膜下方的栅极绝缘膜和设置在氧化物半导体膜上并用作保护绝缘膜的绝缘膜。 通过依次进行热处理和氧掺杂处理对栅极绝缘膜和/或绝缘膜进行脱水或脱氢处理。