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    Semiconductor device and method for manufacturing the same
    5.
    发明授权
    Semiconductor device and method for manufacturing the same 有权

    公开(公告)号：US10910359B2

    公开(公告)日：2021-02-02

    申请号：US16561501

    申请日：2019-09-05

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Naoki Okuno ,  Kosei Nei ,  Hiroaki Honda ,  Naoto Yamade ,  Hiroshi Fujiki

    IPC: H01L27/02 ,  H01L27/11521 ,  H01L27/11519 ,  H01L27/11565 ,  H01L29/786

    Abstract: A transistor includes a first insulator over a substrate; a first oxide thereover; a second oxide in contact with at least part of the top surface of the first oxide; a first conductor and a second conductor each in contact with at least part of the top surface of the second oxide; a third oxide that is over the first conductor and the second conductor and is in contact with at least part of the top surface of the second oxide; a second insulator thereover; a third conductor which is over the second insulator and at least part of which overlaps with a region between the first conductor and the second conductor; and a third insulator which is over the third conductor and at least part of which is in contact with the top surface of the first insulator. The thickness of a region of the first insulator that is in contact with the third insulator is less than the thickness of a region of the first insulator that is in contact with the first oxide.

    Semiconductor device
    6.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10658395B2

    公开(公告)日：2020-05-19

    申请号：US15925122

    申请日：2018-03-19

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hajime Kimura ,  Tsutomu Murakawa ,  Kosei Nei ,  Hiroaki Honda ,  Yusuke Shino

    IPC: H01L27/12 ,  H01L29/786 ,  H01L21/84 ,  G11C11/404 ,  H01L27/06 ,  H01L21/8258 ,  G11C11/405

    Abstract: A semiconductor device which can suppress leakage current between a wiring and a connection electrode connected to a floating node is provided. The semiconductor device includes a first insulator, a first conductor over the first insulator, a second conductor over the first insulator, and a second insulator over the first insulator, the first conductor, and the second conductor. The first conductor and the second conductor contain a metal A (one kind or a plurality of kinds of aluminum, copper, tungsten, chromium, silver, gold, platinum, tantalum, nickel, molybdenum, magnesium, beryllium, indium, and ruthenium). The metal A is detected in an interface between the first insulator and the second insulator by an energy dispersive X-ray spectroscopy (EDX). The second insulator includes a groove for exposing the first insulator between the first conductor and the second conductor.

    Semiconductor device and method for manufacturing the same
    7.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US09276091B2

    公开(公告)日：2016-03-01

    申请号：US14688199

    申请日：2015-04-16

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Suguru Hondo ,  Akihisa Shimomura ,  Masaki Koyama ,  Motomu Kurata ,  Kazuya Hanaoka ,  Sho Nagamatsu ,  Kosei Nei ,  Toru Hasegawa

    IPC: H01L21/46 ,  H01L29/66 ,  H01L29/786

    CPC classification number: H01L29/66969 ,  H01L21/46 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

    Abstract: A transistor including an oxide semiconductor film, which has stable electric characteristics is provided. A transistor including an oxide semiconductor film, which has excellent on-state characteristics is also provided. A semiconductor device in which an oxide semiconductor film having low resistance is formed and the resistance of a channel region of the oxide semiconductor film is increased. Note that an oxide semiconductor film is subjected to a process for reducing the resistance to have low resistance. The process for reducing the resistance of the oxide semiconductor film may be a laser process or heat treatment at a temperature higher than or equal to 450° C. and lower than or equal to 740° C., for example. A process for increasing the resistance of the channel region of the oxide semiconductor film having low resistance may be performed by plasma oxidation or implantation of oxygen ions, for example.

    Abstract translation: 提供具有稳定电特性的包括氧化物半导体膜的晶体管。 还提供了具有优异的导通状态特性的包括氧化物半导体膜的晶体管。 其中形成具有低电阻的氧化物半导体膜并且氧化物半导体膜的沟道区的电阻增加的半导体器件。 注意，氧化物半导体膜经受用于降低电阻以降低电阻的工艺。 用于降低氧化物半导体膜的电阻的方法可以是例如在高于或等于450℃且低于或等于740℃的温度下的激光处理或热处理。 例如，可以通过等离子体氧化或氧离子的注入来提高具有低电阻的氧化物半导体膜的沟道区域的电阻的方法。

    Semiconductor device
    8.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11881513B2

    公开(公告)日：2024-01-23

    申请号：US17047724

    申请日：2019-04-16

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Kosei Nei ,  Tsutomu Murakawa ,  Toshihiko Takeuchi ,  Kentaro Sugaya

    IPC: H01L27/00 ,  H01L29/00 ,  H01L29/24 ,  H01L27/12 ,  H10B12/00

    CPC classification number: H01L29/24 ,  H01L27/1225 ,  H10B12/312

    Abstract: A semiconductor device that can be scaled down or highly integrated is provided. The semiconductor device includes a first layer and a second layer over the first layer. The first layer and the second layer each include a transistor. The transistor in the first layer and the transistor in the second layer each include a first oxide, a first conductor and a second conductor over the first oxide, a first insulator placed to cover the first conductor, the second conductor, and the first oxide, a second insulator over the first insulator, a second oxide placed between the first conductor and the second conductor over the first oxide, a third insulator over the second oxide, a third conductor over the third insulator, and a fourth insulator in contact with a top surface of the second insulator, a top surface of the second oxide, a top surface of the third insulator, and a top surface of the third conductor. The first insulator and the fourth insulator are less likely than the second insulator to allow oxygen to pass through.

    Semiconductor device and method for manufacturing the same
    9.
    发明授权
    Semiconductor device and method for manufacturing the same 有权

    公开(公告)号：US10411003B2

    公开(公告)日：2019-09-10

    申请号：US15725519

    申请日：2017-10-05

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Naoki Okuno ,  Kosei Nei ,  Hiroaki Honda ,  Naoto Yamade ,  Hiroshi Fujiki

    IPC: H01L27/02 ,  H01L27/11519 ,  H01L27/11565 ,  H01L29/786 ,  H01L27/11521

    Abstract: A transistor includes a first insulator over a substrate; a first oxide thereover; a second oxide in contact with at least part of the top surface of the first oxide; a first conductor and a second conductor each in contact with at least part of the top surface of the second oxide; a third oxide that is over the first conductor and the second conductor and is in contact with at least part of the top surface of the second oxide; a second insulator thereover; a third conductor which is over the second insulator and at least part of which overlaps with a region between the first conductor and the second conductor; and a third insulator which is over the third conductor and at least part of which is in contact with the top surface of the first insulator. The thickness of a region of the first insulator that is in contact with the third insulator is less than the thickness of a region of the first insulator that is in contact with the first oxide.

    Method for manufacturing semiconductor device comprising oxide semiconductor layer
    10.
    发明授权
    Method for manufacturing semiconductor device comprising oxide semiconductor layer 有权
    一种用于制造包含氧化物半导体层的半导体器件的方法

    公开(公告)号：US09048265B2

    公开(公告)日：2015-06-02

    申请号：US13897502

    申请日：2013-05-20

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Suguru Hondo ,  Akihisa Shimomura ,  Masaki Koyama ,  Motomu Kurata ,  Kazuya Hanaoka ,  Sho Nagamatsu ,  Kosei Nei ,  Toru Hasegawa

    IPC: H01L21/00 ,  H01L29/66 ,  H01L29/786

    CPC classification number: H01L29/66969 ,  H01L21/46 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

    Abstract: A transistor including an oxide semiconductor film, which has stable electric characteristics is provided. A transistor including an oxide semiconductor film, which has excellent on-state characteristics is also provided. A semiconductor device in which an oxide semiconductor film having low resistance is formed and the resistance of a channel region of the oxide semiconductor film is increased. Note that an oxide semiconductor film is subjected to a process for reducing the resistance to have low resistance. The process for reducing the resistance of the oxide semiconductor film may be a laser process or heat treatment at a temperature higher than or equal to 450° C. and lower than or equal to 740° C., for example. A process for increasing the resistance of the channel region of the oxide semiconductor film having low resistance may be performed by plasma oxidation or implantation of oxygen ions, for example.

    Abstract translation: 提供具有稳定电特性的包括氧化物半导体膜的晶体管。 还提供了具有优异的导通状态特性的包括氧化物半导体膜的晶体管。 其中形成具有低电阻的氧化物半导体膜并且氧化物半导体膜的沟道区的电阻增加的半导体器件。 注意，氧化物半导体膜经受用于降低电阻以降低电阻的工艺。 用于降低氧化物半导体膜的电阻的方法可以是例如在高于或等于450℃且低于或等于740℃的温度下的激光处理或热处理。 例如，可以通过等离子体氧化或氧离子的注入来提高具有低电阻的氧化物半导体膜的沟道区域的电阻的方法。

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