SEMICONDUCTOR DEVICE
    36.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20150069390A1

    公开(公告)日:2015-03-12

    申请号:US14541165

    申请日:2014-11-14

    CPC classification number: H01L29/7869 H01L29/45

    Abstract: An object is to provide a highly reliable transistor and a semiconductor device including the transistor. A semiconductor device including a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; and a source electrode and a drain electrode over the oxide semiconductor film, in which activation energy of the oxide semiconductor film obtained from temperature dependence of a current (on-state current) flowing between the source electrode and the drain electrode when a voltage greater than or equal to a threshold voltage is applied to the gate electrode is greater than or equal to 0 meV and less than or equal to 25 meV, is provided.

    Abstract translation: 目的是提供一种高度可靠的晶体管和包括晶体管的半导体器件。 一种包括栅电极的半导体器件; 栅电极上的栅极绝缘膜; 栅极绝缘膜上的氧化物半导体膜; 以及氧化物半导体膜上的源电极和漏电极,其中当氧化物半导体膜的电压大于电压时,源电极和漏电极之间流过的电流(导通电流)的温度依赖性获得氧化物半导体膜的活化能 或等于施加到栅电极的阈值电压大于或等于0meV且小于或等于25meV。

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