Carbonate PCD with a distribution of Si and/or Al

    公开(公告)号:US10166655B2

    公开(公告)日:2019-01-01

    申请号:US15370129

    申请日:2016-12-06

    Inventor: Yahua Bao

    Abstract: A method for making a carbonate polycrystalline diamond body includes combining a first quantity of diamond with a first quantity of magnesium carbonate to form a first layer for forming a working surface, and combining a second quantity of magnesium carbonate to form a second layer adjacent to the first layer, forming an assembly. The method includes placing a quantity of silicon or aluminum in or adjacent to at least a portion of the assembly and sintering the assembly including the silicon or aluminum at high pressure and high temperature, causing the silicon or aluminum to infiltrate at least one layer of the assembly.

    SOLID PCD WITH TRANSITION LAYERS TO ACCELERATE FULL LEACHING OF CATALYST

    公开(公告)号:US20170341147A1

    公开(公告)日:2017-11-30

    申请号:US15536875

    申请日:2015-11-19

    Inventor: Yahua Bao

    Abstract: A method of making a polycrystalline diamond compact includes forming a first layer of polycrystalline diamond precursor materials comprising diamond particles and a first concentration of catalyst, forming a second layer of polycrystalline diamond precursor materials comprising diamond particles and a second concentration of catalyst, and placing a layer of an infiltrant material in the proximity of the first or the second layer of polycrystalline diamond precursor materials. The second concentration of catalyst is greater than the first concentration of catalyst. The infiltrant material is a catalyst. The first layer and the second layer are sintered under high-pressure high-temperature conditions in the presence of the infiltrant material to form the polycrystalline diamond compact. At least a portion of the catalyst is leached from the polycrystalline diamond compact.

    Carbonate PCD and methods of making the same
    35.
    发明授权
    Carbonate PCD and methods of making the same 有权
    碳酸PCD及其制作方法

    公开(公告)号:US09539704B2

    公开(公告)日:2017-01-10

    申请号:US14209768

    申请日:2014-03-13

    Inventor: Yahua Bao

    CPC classification number: B24D18/0009 B24D3/04 B24D99/005 E21B10/55 E21B10/567

    Abstract: A polycrystalline diamond body, and a method for making a carbonate polycrystalline diamond body includes combining a first quantity of diamond particles with a first quantity of magnesium carbonate to form a first layer in an enclosure, the first layer having a working surface, and placing a second quantity of magnesium carbonate in the enclosure forming a second layer, the first layer and the second layer forming an assembly. A quantity of at least one of silicon or aluminum is mixed in with or placed adjacent to at least one of the first layer or the second layer. The assembly, including the at least one of silicon or aluminum, is sintered at high pressure and high temperature, causing the at least one of silicon or aluminum to infiltrate at least one layer of the assembly, forming a polycrystalline diamond body.

    Abstract translation: 一种多晶金刚石体和一种制造碳酸盐多晶金刚石体的方法,包括将第一量的金刚石颗粒与第一量的碳酸镁组合以在外壳中形成第一层,第一层具有工作表面, 第二量的碳酸镁在外壳中形成第二层,第一层和第二层形成组件。 硅或铝中的至少一种的量与第一层或第二层中的至少一个混合在一起或与第一层或第二层中的至少一个相邻。 包括硅或铝中的至少一种的组件在高压和高温下被烧结,导致硅或铝中的至少一种渗透至少一层组件,形成多晶金刚石体。

    Carbonate PCD with a distribution of Si and/or Al
    36.
    发明授权
    Carbonate PCD with a distribution of Si and/or Al 有权
    具有Si和/或Al分布的碳酸盐PCD

    公开(公告)号:US09539703B2

    公开(公告)日:2017-01-10

    申请号:US14213721

    申请日:2014-03-14

    Inventor: Yahua Bao

    CPC classification number: B24D18/0009 B24D99/005 E21B10/55 E21B10/567

    Abstract: A method for making a carbonate polycrystalline diamond body includes combining a first quantity of diamond with a first quantity of magnesium carbonate to form a first layer for forming a working surface, and combining a second quantity of magnesium carbonate to form a second layer adjacent to the first layer, forming an assembly. The method includes placing a quantity of silicon or aluminum in or adjacent to at least a portion of the assembly and sintering the assembly including the silicon or aluminum at high pressure and high temperature, causing the silicon or aluminum to infiltrate at least one layer of the assembly.

    Abstract translation: 制造碳酸盐多晶金刚石体的方法包括将第一量的金刚石与第一量的碳酸镁组合以形成用于形成工作表面的第一层,以及将第二量的碳酸镁组合形成邻近 第一层,形成组件。 该方法包括将一定量的硅或铝放置在组件的至少一部分中或其附近,并在高压和高温下烧结包括硅或铝的组件,导致硅或铝渗入至少一层 部件。

    PCD WAFER WITHOUT SUBSTRATE FOR HIGH PRESSURE / HIGH TEMPERATURE SINTERING
    38.
    发明申请
    PCD WAFER WITHOUT SUBSTRATE FOR HIGH PRESSURE / HIGH TEMPERATURE SINTERING 审中-公开
    无高压/高温烧结基板的PCD波形

    公开(公告)号:US20150183092A1

    公开(公告)日:2015-07-02

    申请号:US14566195

    申请日:2014-12-10

    Abstract: A method of forming a cutting element may include subjecting a first press containing at least a diamond powder-containing container and a volume of a high melting temperature non-reactive material to a first high pressure high temperature sintering condition to form a sintered polycrystalline diamond wafer including a diamond matrix of diamond grains bonded together and a plurality of interstitial spaces between the bonded together diamond grains; and subjecting a second press containing the sintered polycrystalline diamond wafer and a substrate to a second high temperature high pressure condition, thereby attaching the wafer to the substrate to form a cutting element having a polycrystalline diamond layer on the substrate.

    Abstract translation: 形成切割元件的方法可以包括将含有至少含金刚石粉末的容器和一定体积的高熔点非反应性材料的第一压榨机经受第一高压高温烧结条件以形成烧结多晶金刚石晶片 包括结合在一起的金刚石晶粒的金刚石矩阵和在结合的金刚石晶粒之间的多个间隙空间; 以及使包含所述烧结的多晶金刚石晶片和衬底的第二压机经受第二高温高压条件,从而将所述晶片附着到所述衬底上,以在所述衬底上形成具有多晶金刚石层的切割元件。

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