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    ORGANIC LIGHT EMITTING DIODE
    31.
    发明申请
    ORGANIC LIGHT EMITTING DIODE 有权

    公开(公告)号：US20210336178A1

    公开(公告)日：2021-10-28

    申请号：US17367215

    申请日：2021-07-02

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Dong Chan Kim ,  Won Jong Kim ,  Dong Kyu Seo ,  Ji Hye Lee ,  Sang Hoon Yim ,  Won Suk Han

    IPC: H01L51/50

    Abstract: According to an embodiment of the present disclosure, an organic light emitting diode includes: a first electrode; a second electrode overlapping the first electrode; an emission layer positioned between the first electrode and the second electrode; an electron injection layer positioned between the emission layer and the second electrode; and an electron injection delay layer positioned between the emission layer and the electron injection layer, wherein the electron injection layer includes a first material made of a metal and a second material made of a metal halide, and the electron injection delay layer has a thickness of about 20 Å to about 140 Å.

    Pixel and organic light-emitting display device including the same
    32.
    发明授权
    Pixel and organic light-emitting display device including the same 有权

    公开(公告)号：US10991300B2

    公开(公告)日：2021-04-27

    申请号：US16134923

    申请日：2018-09-18

    Applicant: Samsung Display Co., Ltd.

    Inventor： Jong Hee Kim ,  Ji Hye Lee

    IPC: G09G3/3208 ,  G09G3/3233 ,  G09G3/3266

    Abstract: A pixel includes an organic light-emitting diode (OLED), a storage capacitor, and first to fourth transistors. The first transistor includes a gate electrode (GE), a first electrode (FE), and a second electrode (SE), and is configured to control, in response to a voltage of a first node (FN) coupled to the GE, current supplied from a first power source (PS) coupled to the FE to a second PS via the OLED. The storage capacitor is coupled between the FN and the first PS. The second transistor is coupled between a data line and the first transistor. The third transistor includes a FE coupled to the FN and a SE coupled to the SE of the first transistor. The fourth transistor includes a FE coupled to the FN and a SE coupled to the SE of the first transistor, and is configured to transmit an initialization voltage to the FN.

    Light emitting diode and display device including the same
    33.
    发明授权
    Light emitting diode and display device including the same 有权

    公开(公告)号：US10483327B2

    公开(公告)日：2019-11-19

    申请号：US15858252

    申请日：2017-12-29

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Dong Chan Kim ,  Won Jong Kim ,  Ji Young Moon ,  Dong Kyu Seo ,  Myung Chul Yeo ,  Ji Hye Lee ,  Yoon Hyeung Cho

    IPC: H01L27/32 ,  H01L51/52

    Abstract: A light-emitting diode includes a first electrode, a second electrode overlapping the first electrode, a first emission layer and a second emission layer provided between the first electrode and the second electrode, and a first charge generating layer provided between the first emission layer and the second emission layer, the first charge generating layer including a p-type charge generating layer and an n-type charge generating layer. The n-type charge generating layer may include an organic material and an inorganic material doped to the organic material, and the inorganic material may include a lanthanide metal or an alkali earth metal, and an alkali halide.

    Organic light emitting diode display
    35.
    发明授权
    Organic light emitting diode display 有权

    公开(公告)号：US10403851B2

    公开(公告)日：2019-09-03

    申请号：US14985285

    申请日：2015-12-30

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Dong Chan Kim ,  Won Jong Kim ,  Eung Do Kim ,  Ji Hye Lee ,  Da Hea Im ,  Sang Hoon Yim ,  Yoon Hyeung Cho ,  Won Suk Han

    IPC: H01L51/52 ,  H01L27/32

    Abstract: An organic light emitting diode display includes: a substrate; an organic light emitting element on the substrate; and a capping layer on the organic light emitting element and including a high refraction layer formed of an inorganic material having a refractive index which is equal to or greater than about 1.7 and equal to or less than about 6.0, wherein the inorganic material includes at least one selected from CuI, thallium iodide (TlI), AgI, CdI2, HgI2, SnI2, PbI2, BiI3, ZnI2, MnI2, FeI2, CoI2, NiI2, aluminum iodide (AlI3), thorium (IV) iodide (ThI4), uranium triiodide (UI3), MgS, MgSe, MgTe, CaS, CaSe, CaTe, SrS, SrSe, SrTe, BaS, BaSe, BaTe, SnS, PbS, CdS, CaS, ZnS, ZnTe, PbTe, CdTe, SnSe, PbSe, CdSe, CuO, Cu2O, WO3, MoO3, SnO2, Nb2O5, Ag2O, CdO, CoO, Pr2O3, Bi2O3, Fe2O3, AlAs, GaAs, InAs, GaP, InP, AlP, AlSb, GaSb, and InSb.

    ORGANIC LIGHT EMITTING DIODE
    37.
    发明公开
    ORGANIC LIGHT EMITTING DIODE 审中-公开

    公开(公告)号：US20230389350A1

    公开(公告)日：2023-11-30

    申请号：US18448840

    申请日：2023-08-11

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Dong Chan Kim ,  Won Jong Kim ,  Dong Kyu Seo ,  Ji Hye Lee ,  Sang Hoon Yim ,  Won Suk Han

    IPC: H10K50/17 ,  H10K50/13 ,  H10K50/16

    CPC classification number: H10K50/171 ,  H10K50/00 ,  H10K50/166 ,  H10K50/13

    Abstract: According to an embodiment of the present disclosure, an organic light emitting diode includes: a first electrode; a second electrode overlapping the first electrode; an emission layer positioned between the first electrode and the second electrode; an electron injection layer positioned between the emission layer and the second electrode; and an electron injection delay layer positioned between the emission layer and the electron injection layer, wherein the electron injection layer includes a first material made of a metal and a second material made of a metal halide, and the electron injection delay layer has a thickness of about 20 Å to about 140 Å.

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