Abstract:
Provided is a quantum dot (QD) light modulator and an apparatus including the QD light modulator. The QD light modulator may include a QD-containing layer including QDs having light-emission characteristics, a refractive index change layer arranged adjacent to the QD-containing layer, and a reflector arranged facing the QD-containing layer. The refractive index change layer may include a carrier density change area in which a carrier density changes, and the carrier density change area may be arranged adjacent to the QD-containing layer. The light-emission characteristics of the QD-containing layer may be modulated according to a change in a property of the refractive index change layer. The QD light modulator may further include a nano-antenna structure arranged on the QD-containing layer.
Abstract:
A polarimeter for measuring a polarization rotation caused by a measurement object is provided, the polarimeter including an optically active material. The polarimeter includes a light source unit for irradiating a measurement object with light having a specific polarization; an anisotropic meta surface element for splitting reaction light, obtained by reacting the light of the specific polarization irradiated by the light source unit with the measurement object, into first and second reaction light; and a detection unit for detecting the first and second reaction light separated by the anisotropic meta surface element according to polarization. The polarization rotation caused by the measurement object may be calculated by comparing detection signals of the first and second reaction light detected by the detection unit.
Abstract:
An optical modulating device, a beam steering device, and a system employing the same are provided. The optical modulating device includes an active layer, a driver configured to electrically control a refraction index of the active layer, and a nano-antenna disposed on the active layer, and having a dual nano-antenna structure including a first nano-antenna and a second nano-antenna, the first nano-antenna having a length different from a length of the second nano-antenna, and the first nano-antenna being spaced apart from the second nano-antenna. The driver includes a first driver electrically connected to the first nano-antenna, and a second driver electrically connected to the second nano-antenna.
Abstract:
A beam steering apparatus includes a transformation layer, of which a refraction index is changed by light irradiation, a pattern layer arranged on the transformation layer and comprises a plurality of patterns, and a light irradiation unit arranged under the transformation layer. The pattern layer has patterns of a metasurface shape to reflect an external laser. The light irradiation unit may emit light having different characteristics.
Abstract:
MQW devices, IC chips and methods may be used in semiconductor lithography patterning systems. An MQW device includes an array of pixels that have transmission elements and associated support circuits. The support circuits have preliminary memory cells and final memory cells. The final memory cells store transmittance values that control transmittances of the associated transmission elements. This way, exposure of a target with a lithography system for purposes of patterning the target may be performed through the transmission elements according to the controlled transmittances, while subsequent transmittance values are being received by the preliminary memory cells from memory banks. The exposure of the target therefore needs to pause for less time, in order to wait for the MQW device to be refreshed with the subsequent transmittance values. Accordingly the whole semiconductor lithography patterning system may operate faster and thus have more throughput.
Abstract:
A method of manufacturing an organic-inorganic composite thin film may include: forming a thin film from a paste that includes an inorganic powder and an organic compound binder by using a screen printing process; and/or performing a pressing process and a heating process with respect to the thin film. The heating process may be performed at a glass transition temperature of the organic compound binder or in a temperature range higher than the glass transition temperature of the organic compound binder. An X-ray detector configured to detect X-rays irradiated from an outside of the X-ray detector may include: a photoconductive material layer in which electron-hole pairs are formed due to absorption of the X-rays. The photoconductive material layer may be formed of an organic-inorganic composite thin film that includes an inorganic powder and an organic compound binder.
Abstract:
Disclosed is a light modulating apparatus. The light modulating apparatus includes a pixel array including a plurality of pixels, a light modulating device that absorbs or transmit light incident on the pixel array according to an applied voltage, a flip-flop circuit that outputs a first voltage based on a device driving signal indicating a level of a second voltage applied to be applied to the light modulating device, and an amplifier that amplifies the first voltage to generate the second voltage and applies the second voltage to the light modulating device.
Abstract:
A light modulator may include: a light modulating unit formed as a pixel-array type by using a PIN diode including multiple quantum wells including a Group-III nitride semiconductor material, and configured to modulate light by electroabsorption; and/or a control unit including a transistor configured to control voltage applied to the PIN diode of the light modulating unit. The PIN diode and the transistor may be arrayed in an active matrix form.
Abstract:
A thermal imaging pixel, including a variable resistor array; and a pixel readout circuit configured to read electrical signals corresponding to a composite resistance of the variable resistor array, wherein the variable resistor array includes a plurality of variable resistor subarrays electrically connected in series, wherein each variable resistor subarray of the plurality of variable resistor subarrays includes a plurality of variable resistor cells electrically connected in parallel, and wherein each variable resistor cell of the plurality of variable resistor cells has a resistance which changes according to temperature.
Abstract:
Provided is a long-wave infrared (LWIR) sensor including a substrate, a magnetic resistance device on the substrate, and an LWIR absorption layer on the magnetic resistance device, wherein a resistance of the magnetic resistance device changes based on temperature, and wherein the LWIR absorption layer is configured to absorb LWIR rays and generate heat.