IMAGE SENSORS AND ELECTRONIC DEVICES

    公开(公告)号:US20210233963A1

    公开(公告)日:2021-07-29

    申请号:US17232658

    申请日:2021-04-16

    Abstract: An image sensor may include a photodiode within a semiconductor substrate and configured to sense light in an infrared wavelength spectrum of light, a photoelectric conversion device on the semiconductor substrate and configured to sense light in a visible wavelength spectrum of light, and a filtering element configured to selectively transmit at least a portion of the infrared wavelength spectrum of light and the visible wavelength spectrum of light. The filtering element may include a plurality of color filters on the photoelectric conversion device. The photoelectric conversion device may include a pair of electrodes facing each other and a photoelectric conversion layer between the pair of electrodes and configured to selectively absorb light in a visible wavelength spectrum of light. The filtering element may be between the semiconductor substrate and the photoelectric conversion device and may selectively absorb the infrared light and selectively transmit the visible light.

    IMAGE SENSORS AND ELECTRONIC DEVICES
    33.
    发明申请

    公开(公告)号:US20190319062A1

    公开(公告)日:2019-10-17

    申请号:US16196229

    申请日:2018-11-20

    Abstract: An image sensor may include a photoelectric device configured to selectively absorb light associated with a first color of three primary colors, a semiconductor substrate that is stacked with the photoelectric device and includes first and second photo-sensing devices configured to sense light associated with second and third colors of three primary colors. The first and second photo-sensing devices may have different thicknesses, different depths from a surface of the semiconductor substrate, or different thicknesses and different depths from the surface of the semiconductor substrate. At least one part of a thickness area of the first photo-sensing device may overlap at least one part of a thickness area of the second photo-sensing device in a parallel direction extending substantially parallel to the surface of the semiconductor substrate.

    IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME

    公开(公告)号:US20170330911A1

    公开(公告)日:2017-11-16

    申请号:US15664182

    申请日:2017-07-31

    Abstract: An electronic device may include at least one image sensor that includes a plurality of photo-sensing devices, a photoelectric device on one side of the semiconductor substrate and configured to selectively sense first visible light, and a plurality of color filters on separate photo-sensing devices. The plurality of color filters may include a first color filter configured to selectively transmit a second visible light that is different from the first visible light and a second color filter transmitting first mixed light including the second visible light. The electronic device may include multiple arrays of color filters. The electronic device may include different photoelectric devices on the separate arrays of color filters. The different photoelectric devices may be configured to sense different wavelength spectra of light.

    IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME

    公开(公告)号:US20170141143A1

    公开(公告)日:2017-05-18

    申请号:US15283743

    申请日:2016-10-03

    CPC classification number: H01L27/146 H01L27/14647 H01L27/14692

    Abstract: An image sensor includes a semiconductor substrate integrated with at least one of a first photo-sensing device that may sense a first wavelength spectrum of visible light and a second photo-sensing device that may sense second wavelength spectrum of visible light, and a third photo-sensing device on the semiconductor substrate that may selectively sense third wavelength spectrum of visible light in a longer wavelength spectrum of visible light than the first wavelength spectrum of visible light and the second wavelength spectrum of visible light. The first photo-sensing device and the second photo-sensing device may overlap with each other in a thickness direction of the semiconductor substrate.

    ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR
    39.
    发明申请
    ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR 审中-公开
    有机光电器件和图像传感器

    公开(公告)号:US20170040544A1

    公开(公告)日:2017-02-09

    申请号:US15295382

    申请日:2016-10-17

    Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, the active layer including a first compound having a maximum absorption wavelength of about 500 nm to about 600 nm in a visible ray region and a transparent second compound in a visible ray region. The transparent second compound has an absorption coefficient in a thin film state of less than or equal to about 0.1×105 cm−1 in a wavelength region of about 450 nm to about 700 nm.

    Abstract translation: 有机光电子器件包括彼此面对的第一电极和第二电极以及第一电极和第二电极之间的有源层,所述有源层包括第一化合物,其具有约500nm至约600nm的最大吸收波长 可见光区域和可见光区域中的透明第二化合物。 透明第二化合物在约450nm至约700nm的波长范围内具有小于或等于约0.1×10 5 cm -1的薄膜状态的吸收系数。

    ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR
    40.
    发明申请
    ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR 审中-公开
    有机光电器件和图像传感器

    公开(公告)号:US20160099430A1

    公开(公告)日:2016-04-07

    申请号:US14794207

    申请日:2015-07-08

    Abstract: Provided is an organic photoelectronic device including a first light-transmitting electrode positioned at a light incidence side, a second light-transmitting electrode facing the first light-transmitting electrode, a photoactive layer positioned between the first light-transmitting electrode and the second light-transmitting electrode and selectively absorbing light in a given (or, alternatively, desired or predetermined) wavelength region, and a selective light transmittance layer positioned between the first light-transmitting electrode and the photoactive layer, between the second light-transmitting electrode and the photoactive layer, or between the first light-transmitting electrode and the photoactive layer and between the second light-transmitting electrode and the photoactive layer and increasing transmittance of the light in a wavelength region other than the given (or, alternatively, desired or predetermined) wavelength region absorbed by the photoactive layer, and an electronic device including the image sensor is also provided.

    Abstract translation: 提供一种有机光电子器件,其包括位于光入射侧的第一透光电极,与第一透光电极相对的第二透光电极,位于第一透光电极和第二透光电极之间的光活性层, 并且选择性地吸收给定(或者,期望或预定)波长区域中的光,以及位于第一透光电极和光活性层之间的选择性透光层,在第二透光电极和光活性层之间 层,或者在第一透光电极和光活性层之间以及第二透光电极和光敏层之间,并且增加除了给定(或者,期望或预定)波长之外的波长区域中的光的透射率 由光活性层吸收的区域和电极 还提供了包括图像传感器的装置。

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