公开(公告)号：US20230124866A1

公开(公告)日：2023-04-20

申请号：US17968990

申请日：2022-10-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjin LEE ,  Myoungkeun KWON ,  Sangjin KIM ,  Eungryeol SEO ,  Changhoon OH ,  Qasim KHAN

IPC: F24C15/20

Abstract: A ventilation hood includes a main frame which faces an appliance accessible from a front of the appliance, the main frame defining a through-hole passing through the main frame, a motor module on the main frame and configured to suck in air through the through-hole, the motor module including a duct, a motor having an axis, and an exhaust fan driven by the motor and defining a blowing direction perpendicular to the axis of the motor, and a controller configured to control operation of the ventilation hood and a rotation velocity of the exhaust fan. The axis of the motor is in a direction from the front of the appliance to a rear of the appliance which is opposite to the front. The controller is on the main frame and at a front of the duct which corresponds to the front of the appliance.

公开(公告)号：US20200225572A1

公开(公告)日：2020-07-16

申请号：US16578628

申请日：2019-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yigwon KIM ,  Sangjin KIM ,  Heeyoung GO ,  Heebom KIM ,  Hoon KIM ,  Hong-Seock CHOI ,  Jinseok HEO

IPC: G03F1/54 ,  G03F1/60 ,  G03F1/52 ,  G03F1/22

Abstract: Disclosed are photomasks, methods of fabricating the same, and methods of manufacturing semiconductor devices using the same. The photomask comprises a substrate including a pattern region and a peripheral region around the pattern region, a reflection layer on the pattern region and extending onto the peripheral region, an absorption structure on the reflection layer, and a dielectric pattern on the absorption structure on the peripheral region and exposing the absorption structure on the pattern region.

公开(公告)号：US20200008045A1

公开(公告)日：2020-01-02

申请号：US16565338

申请日：2019-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghan PARK ,  Sangjin KIM ,  Duckey LEE ,  Sangsoo JEONG

IPC: H04W8/18 ,  H04W12/06 ,  H04L29/06

Abstract: A method and apparatus of selecting profiles is provided that provides communication services of a terminal equipped with embedded Universal Integrated Circuit Card (eUICC) (or embedded Subscriber Identity Module (eSIM)) and Universal Integrated Circuit Card (UICC). The method of selecting a profile in a terminal including a plurality of subscriber identity modules (SIMs) that differ from each other in type, includes selecting, when sensing a profile changing event, one of the plurality of SIMs according to a preset rule, selecting one of a plurality of profiles stored in the plurality of SIMs, and applying the selected profile to the terminal.

公开(公告)号：US20170345679A1

公开(公告)日：2017-11-30

申请号：US15602599

申请日：2017-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： TaeYong KWON ,  Sangjin KIM ,  Donghoon HWANG ,  Sebeom OH ,  Yunkyeong JANG

IPC: H01L21/56 ,  H01L21/311 ,  H01L21/8234 ,  H01L23/544

CPC classification number: H01L21/565 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/823468 ,  H01L23/544 ,  H01L2223/54426 ,  H01L2223/5446

Abstract: Methods of fabricating a semiconductor device are provided. The methods may include forming a lower mold layer on a substrate that includes first and second regions, forming first and second intermediate mold patterns on the first and second regions, respectively, forming first spacers on sidewalls of the first and second intermediate mold patterns, etching the lower mold layer to form first and second lower mold patterns on the first and second regions, respectively, and etching the substrate to form active patterns and dummy patterns on the first and second regions, respectively. A first distance between a pair of the first intermediate mold patterns may be greater than a second distance between a pair of the second intermediate mold patterns, and the second lower mold patterns may include at least one first merged pattern, whose width is substantially equal to the second distance.