公开(公告)号：US20200002501A1

公开(公告)日：2020-01-02

申请号：US16458429

申请日：2019-07-01

Applicant: Samsung Electronics Co., Ltd. ,  THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY

Inventor： Youngjun Yun ,  Donghee Son ,  Jiheong Kang ,  Zhenan Bao ,  Orestis Vardoulis

IPC: C08K3/04 ,  C08K3/08 ,  H01B1/24 ,  H01L51/00

Abstract: A self-healing composite includes a matrix including an elastomer and conductive nanostructures embedded in the matrix, wherein the elastomer includes a polymer main chain, a —HN—C(═O)—NH— containing first structural unit capable of forming a strong hydrogen bond, and a —HN—C(═O)—NH— containing second structural unit capable of forming a weak hydrogen bond.

公开(公告)号：US10358578B2

公开(公告)日：2019-07-23

申请号：US14919116

申请日：2015-10-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Kyung Lee ,  Jiyoung Jung ,  Youngjun Yun ,  Jeong II Park ,  Ajeong Choi

IPC: H01L29/08 ,  C09D183/06 ,  H01L51/05 ,  H01L51/00 ,  C09D11/101 ,  C09D11/102

Abstract: An insulating ink includes a nanoparticle bonded with a substituent having a polymerizable functional group, at least one of an organosilane compound and polyorganosiloxane, and a solvent.

公开(公告)号：US20180269413A1

公开(公告)日：2018-09-20

申请号：US15804279

申请日：2017-11-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ajeong CHOI ,  Youngjun Yun ,  Yong Uk Lee ,  Suk Gyu Hahm

IPC: H01L51/05 ,  H01L51/00 ,  H01L51/10

CPC classification number: H01L51/0558 ,  H01L51/0008 ,  H01L51/0074 ,  H01L51/0562 ,  H01L51/10 ,  H01L51/105

Abstract: A thin film transistor includes a pair of auxiliary structures facing each other on a substrate, an active layer including an organic semiconductor and continuously grown between the pair of auxiliary structures, a gate electrode on the substrate and overlapped by the active layer, and a source electrode and a drain electrode electrically connected to the active layer. A method of manufacturing the thin film transistor is disclosed.

公开(公告)号：US20180123064A1

公开(公告)日：2018-05-03

申请号：US15784733

申请日：2017-10-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ajeong Choi ,  Joo Young Kim ,  Youngjun Yun ,  Yong-Uk Lee ,  Jiyoung Jung

IPC: H01L51/05 ,  H01L51/00

CPC classification number: H01L51/0533 ,  H01L51/0002 ,  H01L51/0004 ,  H01L51/0545

Abstract: A method of manufacturing an organic thin film transistor includes forming a gate insulating layer on a gate electrode, forming a mold on the gate insulating layer, the mold including a void, forming a self-assembled layer from a self-assembled layer precursor in the void of the mold, removing the mold, and forming an organic semiconductor on the gate insulating layer.

公开(公告)号：US09923159B2

公开(公告)日：2018-03-20

申请号：US15131165

申请日：2016-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo Young Kim ,  Jiyoung Jung ,  Jeong Il Park ,  Woo Young Yang ,  Youngjun Yun ,  Eun Kyung Lee ,  Ajeong Choi

IPC: H01L51/00 ,  H01L51/05

CPC classification number: H01L51/0533 ,  H01L51/0003 ,  H01L51/0005 ,  H01L51/0011 ,  H01L51/0074

Abstract: A thin film transistor includes a gate electrode, a semiconductor overlapping the gate electrode, a gate insulator between the gate electrode and the semiconductor, and a source electrode and a drain electrode electrically connected to the semiconductor, wherein the gate insulator includes an inorganic insulation layer facing the gate electrode and an organic insulation layer facing the semiconductor. A method of manufacturing the thin film transistor and an electronic device including the thin film transistor are provided.

公开(公告)号：US09727144B2

公开(公告)日：2017-08-08

申请号：US14272121

申请日：2014-05-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngjun Yun ,  Young-eal Kim ,  Jesada Ungnapatanin ,  Hoon Song ,  Hong-seok Lee

IPC: G06F3/01

CPC classification number: G06F3/017

Abstract: Provided are a three-dimensional (3D) interaction apparatus capable of recognizing a user's motions in a 3D space for performing a 3D interaction function, a display device including the 3D interaction apparatus, and a method of driving the 3D interaction apparatus. The 3D interaction apparatus includes a depth camera which obtains a depth image including depth information of a distance between an object and the depth camera; an active optical device disposed in front of the depth camera and configured to adjust a propagation path of light by refracting incident light so as to adjust a field of view of the depth camera; and a driving unit which controls operation of the active optical device.