公开(公告)号：US09347130B2

公开(公告)日：2016-05-24

申请号：US13147837

申请日：2010-03-17

Applicant: Shiro Tsukamoto ,  Tomio Otsuki

Inventor： Shiro Tsukamoto ,  Tomio Otsuki

IPC: C23C14/14 ,  B22D21/00 ,  B22D7/00 ,  B22D25/02 ,  C23C14/34 ,  C22C28/00 ,  C22F1/16 ,  C23C14/08

CPC classification number: C23C14/3414 ,  B22D21/00 ,  C22C28/00 ,  C22F1/16 ,  C23C14/08

Abstract: Provided are a lanthanum target for sputtering which has a Vickers hardness of 60 or more and no spotty macro patterns on the surface, and a method of producing a lanthanum target for sputtering, wherein lanthanum is melted and cast to produce an ingot, the ingot is subject to knead forging at a temperature of 300 to 500° C. and subsequently subject to upset forging at 300 to 500° C. to form the shape into a rough target shape, and this is additionally subject to machining to obtain a target. This invention aims to offer technology for efficiently and stably providing a lanthanum target for sputtering that has no spotty macro patterns on the surface, and a method of producing the same.

Abstract translation: 本发明提供一种维氏硬度为60以上的维氏硬度的铼靶，表面上没有斑点的宏观图案，以及制造用于溅射的镧靶的方法，其中将镧熔融并铸造以生产锭，该锭为 在300〜500℃的温度下进行揉搓锻造，然后在300〜500℃下进行镦锻，形成粗略的目标形状，另外进行机械加工以获得目标。 本发明的目的在于提供一种用于有效且稳定地提供在表面上没有斑点的宏观图案的用于溅射的镧靶的技术及其制造方法。

公开(公告)号：US09068258B2

公开(公告)日：2015-06-30

申请号：US13824412

申请日：2011-10-24

Applicant: Shiro Tsukamoto ,  Nobuhito Makino ,  Hideaki Fukuyo

Inventor： Shiro Tsukamoto ,  Nobuhito Makino ,  Hideaki Fukuyo

IPC: H01B1/02 ,  C23C14/34 ,  C22C14/00 ,  C22F1/18 ,  C22C1/02

CPC classification number: C23C14/3407 ,  C22C1/02 ,  C22C14/00 ,  C22F1/183 ,  C23C14/3414

Abstract: Provided is a titanium target for sputtering having a Shore hardness Hs of 20 or more and a basal plane orientation ratio of 70% or less. In the titanium target for sputtering, the purity of titanium is 99.995 mass % or more, excluding gas components. It is an object of the present invention to provide a high-quality titanium target for sputtering, in which impurities are reduced, and which can prevent occurrence of cracking or breaking in high-power sputtering (high-rate sputtering), stabilize sputtering characteristics, and effectively suppress occurrence of particles during formation of a film.

Abstract translation: 本发明提供一种肖氏硬度Hs为20以上，基面取向率为70％以下的溅射用钛靶。 在用于溅射的钛靶中，钛的纯度为99.995质量％以上，不包括气体成分。 本发明的目的是提供一种用于溅射的高质量钛靶，其中杂质减少，并且可以防止在大功率溅射（高速溅射）中发生破裂或断裂，稳定溅射特性， 并且有效地抑制了在形成膜期间颗粒的发生。

公开(公告)号：US20140251802A1

公开(公告)日：2014-09-11

申请号：US14353507

申请日：2012-04-27

Applicant: Shiro Tsukamoto ,  Nobuhito Makino ,  Atsushi Fukushima ,  Kazuto Yagi ,  Eiji Hino

Inventor： Shiro Tsukamoto ,  Nobuhito Makino ,  Atsushi Fukushima ,  Kazuto Yagi ,  Eiji Hino

IPC: H01J37/34

CPC classification number: H01J37/3426 ,  C22C1/10 ,  C22C14/00 ,  C23C14/3414

Abstract: A high-purity titanium target for sputtering containing 0.5 to 5 mass ppm of S as an additive component, wherein the purity of the target excluding additive components and gas components is 99.995 mass percent or higher. An object of this invention is to provide a high-quality titanium target for sputtering which is free from fractures and cracks during high-power sputtering (high-rate sputtering) and is capable of stabilizing the sputtering characteristics.

Abstract translation: 一种用于溅射的高纯度钛靶，其含有0.5〜5质量ppm的S作为添加成分，其中，除添加成分和气体成分以外的目标的纯度为99.995质量％以上。 本发明的目的是提供一种用于溅射的高质量钛靶，其在高功率溅射（高速溅射）期间没有裂缝和裂纹，并且能够稳定溅射特性。

公开(公告)号：US08663440B2

公开(公告)日：2014-03-04

申请号：US12892018

申请日：2010-09-28

Applicant: Shiro Tsukamoto ,  Tomio Otsuki

Inventor： Shiro Tsukamoto ,  Tomio Otsuki

IPC: C25B9/00 ,  C23C14/00 ,  C25B11/00 ,  C25B13/00 ,  C04B35/00 ,  H01B1/02 ,  C01B33/20 ,  C01G25/02 ,  C01G27/02

CPC classification number: C23C14/3414 ,  C22C1/02 ,  C22C14/00 ,  C22F1/183

Abstract: The object of this invention is to provide a high quality titanium target for sputtering capable of reducing the impurities that cause generation of particles and abnormal discharge, which is free from fractures and cracks during high power sputtering (high rate sputtering), and capable of stabilizing the sputtering properties and effectively suppressing the generation of particles upon deposition. This invention is able to solve foregoing problems using a high purity titanium target for sputtering containing, as additive components, 3 to 10 mass ppm of S and 0.5 to 3 mass ppm of Si, and in which the purity of the target excluding additive components and gas components is 99.995 mass percent or higher.

Abstract translation: 本发明的目的是提供一种用于溅射的高质量钛靶，其能够减少在高功率溅射（高速溅射）期间没有裂缝和高稳定性的颗粒产生和异常放电的杂质 溅射性能并且有效地抑制沉积时的颗粒的产生。 本发明能够解决上述使用高纯钛靶溅射的问题，其中含有作为添加成分的S为3〜10质量ppm，Si为0.5〜3质量ppm，其中，除了添加成分以外的靶的纯度， 气体成分为99.995质量％以上。

公开(公告)号：US20120073964A1

公开(公告)日：2012-03-29

申请号：US12892018

申请日：2010-09-28

Applicant: Shiro Tsukamoto ,  Tomio Otsuki

Inventor： Shiro Tsukamoto ,  Tomio Otsuki

IPC: C23C14/14

CPC classification number: C23C14/3414 ,  C22C1/02 ,  C22C14/00 ,  C22F1/183

Abstract: The object of this invention is to provide a high quality titanium target for sputtering capable of reducing the impurities that cause generation of particles and abnormal discharge, which is free from fractures and cracks during high power sputtering (high rate sputtering), and capable of stabilizing the sputtering properties and effectively suppressing the generation of particles upon deposition.This invention is able to solve foregoing problems using a high purity titanium target for sputtering containing, as additive components, 3 to 10 mass ppm of S and 0.5 to 3 mass ppm of Si, and in which the purity of the target excluding additive components and gas components is 99.995 mass percent or higher.

Abstract translation: 本发明的目的是提供一种用于溅射的高质量钛靶，其能够减少在高功率溅射（高速溅射）期间没有裂缝和高稳定性的颗粒产生和异常放电的杂质 溅射性能并且有效地抑制沉积时的颗粒的产生。 本发明能够解决上述使用高纯钛靶溅射的问题，其中含有作为添加成分的S为3〜10质量ppm，Si为0.5〜3质量ppm，其中，除了添加成分以外的靶的纯度， 气体成分为99.995质量％以上。

公开(公告)号：US20070108046A1

公开(公告)日：2007-05-17

申请号：US10566301

申请日：2004-08-24

Applicant: Shiro Tsukamoto

Inventor： Shiro Tsukamoto

IPC: C23C14/00

CPC classification number: C23C14/3414

Abstract: Provided is a hollow cathode sputtering target comprising an inner bottom face having a surface roughness of Ra≦1.0 μm, and preferably Ra≦0.5 μm. This hollow cathode sputtering target has superior sputter film evenness (uniformity), generates few arcing and particles, is capable of suppressing the peeling of the redeposited film on the bottom face, and has superior deposition characteristics.

Abstract translation: 提供一种空心阴极溅射靶，其包括表面粗糙度Ra <1.0μm，优选Ra <=0.5μm的内底面。 该空心阴极溅射靶具有优异的溅射膜均匀性（均匀性），产生少量电弧和粒子，能够抑制底面上的再沉积膜的剥离，并且具有优异的沉积特性。

公开(公告)号：US20050182214A1

公开(公告)日：2005-08-18

申请号：US11105293

申请日：2005-04-11

Applicant: Atsushi Nishida ,  Mitsuhiro Arisawa ,  Shiro Tsukamoto ,  Masahiko Shimoda

Inventor： Atsushi Nishida ,  Mitsuhiro Arisawa ,  Shiro Tsukamoto ,  Masahiko Shimoda

IPC: B01J31/00 ,  B01J31/16 ,  B01J31/24 ,  B01J37/02 ,  C07B61/00 ,  C08F4/00

CPC classification number: B01J31/1616 ,  B01J31/24 ,  B01J37/0238 ,  B01J2231/4211 ,  B01J2231/4261 ,  B01J2531/824 ,  Y02P20/582

Abstract: The present invention relates to a substrate having an organic metal complex bonded on the surface thereof, which is prepared by the vapor deposition of a sulfur atom onto a substrate followed by bonding of an organic metal complex such as tetrakis-triphenylphosphine palladium [Pd(PPh3)4] to the surface of the substrate; a substrate bonded transition metal catalyst using said substrate; and a method for the preparation thereof. The above substrate and metal catalyst allow the solution of some problems with respect to the safety and stability of an organic metal complex in its use, the removal of trace amounts of metals in a reaction product, waste water treatment and the like.

Abstract translation: 本发明涉及通过将硫原子气相沉积到基底上，然后将有机金属络合物如四 - 三苯基膦钯[Pd（PPh） 3 4 <4>]到衬底的表面; 使用所述衬底的基底键合过渡金属催化剂; 及其制备方法。 上述底物和金属催化剂允许解决有机金属络合物在使用中的安全性和稳定性的一些问题，在反应产物中除去微量的金属，废水处理等。