公开(公告)号：US20050088904A1

公开(公告)日：2005-04-28

申请号：US10922825

申请日：2004-08-20

申请人： Mohit Jain ,  Danish Syed

发明人： Mohit Jain ,  Danish Syed

IPC分类号： G11C15/00 ,  G11C29/38

CPC分类号： G11C15/00 ,  G11C29/38

摘要： An improved Built-In-Self-Test (BIST) architecture for Content Addressable Memory (CAM) devices, comprising a bit scanner for reading out the contents of the matchlines of the CAM cells as a serial bit stream; a bit transition detector that detects and determines the address of each bit transition in the serial bit stream; a state machine that generates bit addresses for each expected transition in the serial bit stream; and an analyser that compares expected transition bit addresses with detected transition addresses and declares a BIST failure if expected and detected transition addresses do not match at any point in the bit stream.

摘要翻译： 用于内容可寻址存储器（CAM）设备的改进的内置自测（BIST）架构，包括用于读出作为串行位流的CAM单元的匹配线的内容的位扫描器; 一个位转换检测器，用于检测和确定串行比特流中每个位转换的地址; 状态机，为串行比特流中的每个预期转换生成位地址; 以及分析器，将预期的转换位地址与检测到的转换地址进行比较，并在预期的情况下声明BIST故障，并且检测到的转换地址在位流中的任何位置都不匹配。

公开(公告)号：US06613682B1

公开(公告)日：2003-09-02

申请号：US09422816

申请日：1999-10-21

申请人： Mohit Jain ,  Thorsten Lill ,  Jeff Chinn

发明人： Mohit Jain ,  Thorsten Lill ,  Jeff Chinn

IPC分类号： H01L21302

CPC分类号： H01L21/0276 ,  H01L21/28123 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139

摘要： The present invention provides a method for the simultaneous removal of an oxygen and/or nitrogen-containing dielectric antireflective coating (“DARC”) during plasma etching of an underlying layer in a film stack. According to the method of the invention, the film stack is etched using a plasma containing reactive fluorine species. The concentration of reactive fluorine species within the plasma is controlled based on one or more of the following factors: the oxygen content of the antireflective coating, the nitrogen content of the antireflective coating, the thickness of the antireflection coating layer, and the thickness of the underlying film stack layer. The disclosure of the invention provides preferred combinations of plasma source gases which provide for the simultaneous removal of an oxygen and/or nitrogen-containing DARC layer during etching of an underlying etch stack layer, where the underlying stack layer comprises a metal silicide, polysilicon, or a metal. Also provided herein is a formula for determining the total amount of DARC removed using a given etch process recipe, based on the etch selectivity of the particular process recipe

摘要翻译： 本发明提供了一种用于在膜堆叠中的下层的等离子体蚀刻期间同时去除氧和/或含氮介电抗反射涂层（“DARC”）的方法。 根据本发明的方法，使用含有反应性氟物质的等离子体来蚀刻膜堆叠。 基于以下一个或多个因素来控制等离子体中的活性氟物质的浓度：抗反射涂层的氧含量，抗反射涂层的氮含量，抗反射涂层的厚度和抗反射涂层的厚度 底层薄膜堆叠层。 本发明的公开内容提供了等离子体源气体的优选组合，其提供了在蚀刻下面的蚀刻堆叠层期间同时去除氧和/或含氮DARC层，其中下面的堆叠层包括金属硅化物，多晶硅， 或金属。 本文还提供了基于特定工艺配方的蚀刻选择性来确定使用给定蚀刻工艺配方去除的DARC的总量的公式

公开(公告)号：US06599842B2

公开(公告)日：2003-07-29

申请号：US09450475

申请日：1999-11-29

申请人： John Chao ,  Mohit Jain ,  Jeffrey D. Chinn

发明人： John Chao ,  Mohit Jain ,  Jeffrey D. Chinn

IPC分类号： H01L21302

CPC分类号： H01L21/67069 ,  H01L21/3065

摘要： A method for processing a substrate disposed in a substrate processing chamber to modify the contour of a trench formed on the substrate. The substrate processing chamber is the type that has a coil and a plasma generation system including a source power system operatively coupled to the coil and a bias power system operatively coupled to the substrate process chamber. The method includes transferring the substrate into the substrate process chamber. Thereafter, the substrate is exposed to a plasma formed from a first process gas consisting essentially of a sputtering agent by applying RF energy from the source power system to the coil. The plasma is biased toward the substrate by applying bias power to the substrate process chamber. Thereafter, the substrate is exposed to a plasma formed from a second process gas without applying bias power or applying minimal bias power to the substrate process chamber.

摘要翻译： 一种用于处理设置在基板处理室中以改变形成在基板上的沟槽的轮廓的基板的方法。 衬底处理室是具有线圈和等离子体产生系统的类型，其包括可操作地耦合到线圈的源电力系统和可操作地耦合到衬底处理室的偏置电力系统。 该方法包括将衬底转移到衬底处理室中。 此后，通过将来自源电力系统的RF能量施加到线圈，将衬底暴露于由基本上由溅射剂组成的第一工艺气体形成的等离子体。 通过向衬底处理室施加偏置功率将等离子体偏压到衬底。 此后，将衬底暴露于由第二工艺气体形成的等离子体，而不施加偏置功率或向衬底处理室施加最小的偏置功率。