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公开(公告)号：US10790461B2
公开(公告)日：2020-09-29
申请号：US16462447
申请日：2017-11-16
Applicant: TORAY INDUSTRIES, INC.
Inventor： Daisuke Sakii , Seiichiro Murase , Junji Wakita
Abstract: A field-effect transistor includes: a substrate; a source electrode; a drain electrode; a gate electrode; a semiconductor layer in contact with the source electrode and with the drain electrode; and a gate insulating layer insulating between the semiconductor layer and the gate electrode. The gate insulating layer comprising at least a polysiloxane having a structural unit represented by a general formula (1): in the general formula (1), R1 represents a hydrogen atom, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group, or an alkenyl group; R2 represents a hydrogen atom, an alkyl group, a cycloalkyl group, or a silyl group; m represents 0 or 1; A1 represents an organic group including at least two groups selected from a carboxy group, a sulfo group, a thiol group, a phenolic hydroxy group, or a derivative of these groups.
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公开(公告)号：US10538075B2
公开(公告)日：2020-01-21
申请号：US15559663
申请日：2016-03-15
Applicant: TORAY INDUSTRIES, INC.
Inventor： Akihiro Iihara , Yasunori Kuse , Seiichiro Murase
Abstract: The present invention provides a silicone composition for use in a printing plate, the composition including at least: a SiH group-containing compound; a compound represented by the following general formula (I); a compound represented by the following general formula (II); and/or a compound represented by the following general formula (III); wherein Ds in the compound represented by the general formula (I), Gs in the compound represented by the general formula (II) and Js in the compound represented by the general formula (III) each represents an acetoxy group or a dialkyloximino group: A-Si-(D)3 (I) (wherein in the general formula (I), A represents a non-hydrolyzable functional group capable of undergoing a hydrosilylation reaction with a SiH group); E-Si-(G)3 (II) (wherein in the general formula (II), E represents a non-hydrolyzable functional group incapable of undergoing a hydrosilylation reaction with a SiH group); and Si-(J)4 (III). An object of the present invention is to provide a silicone composition for use in a printing plate, for obtaining a planographic printing plate precursor or a planographic printing plate which includes a silicone rubber layer having an excellent adhesion to an underlying layer despite being a fast-curing silicone rubber layer, and which has an excellent ink repellency and scratch resistance.
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33.发明申请公开(公告)号：US20190198786A1
公开(公告)日：2019-06-27
申请号：US16331006
申请日：2017-09-06
Applicant: Toray Industries, Inc.
Inventor： Hiroji Shimizu , Seiichiro Murase , Shota Kawai
IPC: H01L51/05 , H01L51/00 , H01L23/66 , G06K19/077
CPC classification number: H01L51/0558 , G06K19/07724 , G06K19/07773 , H01L23/66 , H01L29/786 , H01L51/0003 , H01L51/0018 , H01L51/0048 , H01L51/0097 , H01L51/05 , H01L51/052 , H01L51/0541 , H01L51/0545 , H01L2223/6677
Abstract: Provided is a method for manufacturing a field-effect transistor, the method including the steps of: forming a gate electrode on the surface of a substrate; forming a gate insulating layer on the gate electrode; forming a conductive film containing a conductor and a photosensitive organic component by a coating method on the gate insulating layer; exposing the conductive film from the rear surface side of the substrate with the gate electrode as a mask; developing the exposed conductive film to form a source electrode and a drain electrode; and forming a semiconductor layer by a coating method between the source electrode and the drain electrode. This method makes it possible to provide an FET, a semiconductor device, and an RFID which can be prepared by a simple process, and which have a high mobility, and have a gate electrode and source/drain electrodes aligned with a high degree of accuracy.
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